Tunneling effect in cavity-resonator-coupled arrays

The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.

Tunneling Effect Enhanced by Pd Screening as Main LENR Mechanism:A Brief Theoretical Impression

In this paper are illustrated the main features of tunneling travelling between two deuterons within a lattice. Considering thescreening effect due to lattice electrons we compare the d-d fusion rate evaluated from different authors assuming different screeningefficiency and different d-d potentials. Then, we propose an effective potential which describes very well the attractive contribution dueto Plasmon exchange between two deuterons and by means of it we will compute the d-d fusion rates for different energy values.

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

Estimation of tunneling effect caused by luminance non-uniformity in head-up displays

Head-up displays （HUDs） enable a pilot to manage aircraft activities by facilitating simultaneous access to the flight instrument data and to the outside scene. However, HUDs can also distract a pilot. This study shows that HUD luminance non-uniformity may force inappropriate distribution of attention between the events shown on HUD symbology and the outside scene because of the resultant differential contrast in the display area. Results of statistical analysis demonstrate considerable effects of HUD image luminance and ambient luminance, as well as their interaction, on the detection of events displayed on an HUD and the outside scene.

High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect

This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.

Tunneling of Bose-Einstein condensate and interference effect in a harmonic trap with a Gaussian energy barrier

The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation

The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.

Si–Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

Design and Analysis of Graphene Based Tunnel Field Effect Transistor with Various Ambipolar Reducing Techniques

The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Study on dynamic response of high speed train window glass under tunnel aerodynamic effects

Purpose-This paper aims to analyze the bearing characteristics of the high speed train window glass under aerodynamic load effects.Design/methodology/approach-In order to obtain the dynamic strain response of passenger compartment window glass during high-speed train crossing the tunnel,taking the passenger compartment window glass of the CRH3 high speed train onWuhan-Guangzhou High Speed Railway as the research object,this study tests the strain dynamic response and maximum principal stress of the high speed train passing through the tunnel entrance and exit,the tunnel and tunnel groups as well as trains meeting in the tunnel at an average speed of 300 km$h-1.Findings-The results show that while crossing the tunnel,the passenger compartment window glass of high speed train is subjected to the alternating action of positive and negative air pressures,which shows the typical mechanic characteristics of the alternating fatigue stress of positive-negative transient strain.The maximum principal stress of passenger compartment window glass for high speed train caused by tunnel aerodynamic effects does not exceed 5 MPa,and the maximum value occurs at the corresponding time of crossing the tunnel groups.The high speed train window glass bears medium and low strain rates under the action of tunnel aerodynamic effects,while the maximum strain rate occurs at the meeting moment when the window glass meets the train head approaching from the opposite side in the tunnel.The shear modulus of laminated glass PVB film that makes up high speed train window glass is sensitive to the temperature and action time.The dynamically equivalent thickness and stiffness of the laminated glass and the dynamic bearing capacity of the window glass decrease with the increase of the action time under tunnel aerodynamic pressure.Thus,the influence of the loading action time and fatigue under tunnel aerodynamic effects on the glass strength should be considered in the design for the bearing performance of high speed train window glass.Originality/value-The research results provide data support for the analysis of mechanical characteristics,damage mechanism,strength design and structural optimization of high speed train glass.

Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry-Etched MEMS Tunneling Accelerometer

A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.The tunneling current under open loop operation is tested in the air by HP4145B semiconductor analyzer,which verifies the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current.The tunneling barrier is extrapolated to be from 1.182 to 2.177eV.The threshold voltages are tested to be 14～16V for most of the devices.The threshold voltages under -1,0,and +1g are tested,respectively,which shows the sensitivity of the accelerometer is about 87mV/g.

Effects of ferrites on magnetic transport properties in La_(2/3)Sr_(1/3)MnO_3/ferrites composites

Effects of soft-magnetic MnZn ferrite （Mn0.5Zn0.5Fe2O4, MZF） and hard-magnetic Ba ferrite （BaO.6Fe2O3, BaM） on the structure and magnetic transport properties of [La2/3Srl/3MnO3] （LSMO）/（x） [ferrites] （ferrites=MZF, BaM） composites have been investigated. It was found that the inclusion of MZF phase reduces magnetization and ferromagnetic-paramagnetic transition temperature （To） of the composites. With increasing the content of the dopants, the high-temperature magnetoresistance （MR） decreases, whereas low-temperature MR increases and reaches 42% at 150 K and x=0.1. However, for the LSMO/BaM composites, magnetization and ferromagneticparamagnetic transition temperature （To） decrease firstly as x〈5%, and then increase as x〉5%. The resistivity of the composites increases by five orders of magnitude at x=1% and is out of measured range at x=5%. High magnetic field has little effect on the resistivity and magnetoresistance originate from the pinning effect of BaM for the composites with x〉5%, which may grains.

Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET

The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect.However, the back-gate curves’ measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves’ measurement, which are: Fowler–Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling.The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves’ measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

Tunnelling effect from a Vaidya-de Sitter black hole

In this paper, we extend Parikh＇ recent work to the Vaidya-de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability when the particle crosses the event horizon. From the tunnelling probability we also find a leading correction to the semiclassical emission rate.

Solution of Wheeler-De Witt Equation, Potential Well and Tunnel Effect

This paper uses the relation of the cosmic scale factor and scalar field to solve Wheeler-De Witt equation,gives the tunnel effect of the cosmic scale factor a and quantum potential well of scalar field, and makes it fit with the physics of cosmic quantum birth. By solving Wheeler-De Witt equation we achieve a general probability distribution of the cosmic birth, and give the analysis of cosmic quantum birth.

Vibration Compensation for Scanning Tunneling Microscope

The influence of vibration is already one of main obstacles for improving the nano measuring accuracy.The techniques of anti-vibration,vibration isolation and vibration compensation become an important branch in nano measuring field.Starting with the research of sensitivity to vibration of scanning tunneling microscope(STM),the theory,techniques and realization methods of nano vibration sensor based on tunnel effect are initially investigated,followed by developing the experimental devices.The experiments of the vibration detection and vibration compensation are carried out.The experimental results show that vibration sensor based on tunnel effect is characterized by high sensitivity,good frequency characteristic and the same vibratory response characteristic consistent with STM.

Interference effects of two and three super-tall buildings under wind action

Most previous investigations on interference effects of tall buildings under wind actions focused on the wind induced interference effects between two buildings,and the interference effects of three or more buildings have seldom been studied so far due to the huge workload involved in experiments and data processing.In this paper,mean and dynamic force/response interference effects and peak wind pressure interference effects of two and three tall buildings,especially the three-building configuration,are investigated through a series of wind tunnel tests on typical tall building models using high frequency force balance technique and wind pressure measurements.Furthermore,the present paper focuses on the effects of parameters,including breadth ratio and height ratio of the buildings and terrain category,on the interference factors and derives relevant regression results for the interference factors.