Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

Study on dynamic response of high speed train window glass under tunnel aerodynamic effects

Purpose-This paper aims to analyze the bearing characteristics of the high speed train window glass under aerodynamic load effects.Design/methodology/approach-In order to obtain the dynamic strain response of passenger compartment window glass during high-speed train crossing the tunnel,taking the passenger compartment window glass of the CRH3 high speed train onWuhan-Guangzhou High Speed Railway as the research object,this study tests the strain dynamic response and maximum principal stress of the high speed train passing through the tunnel entrance and exit,the tunnel and tunnel groups as well as trains meeting in the tunnel at an average speed of 300 km$h-1.Findings-The results show that while crossing the tunnel,the passenger compartment window glass of high speed train is subjected to the alternating action of positive and negative air pressures,which shows the typical mechanic characteristics of the alternating fatigue stress of positive-negative transient strain.The maximum principal stress of passenger compartment window glass for high speed train caused by tunnel aerodynamic effects does not exceed 5 MPa,and the maximum value occurs at the corresponding time of crossing the tunnel groups.The high speed train window glass bears medium and low strain rates under the action of tunnel aerodynamic effects,while the maximum strain rate occurs at the meeting moment when the window glass meets the train head approaching from the opposite side in the tunnel.The shear modulus of laminated glass PVB film that makes up high speed train window glass is sensitive to the temperature and action time.The dynamically equivalent thickness and stiffness of the laminated glass and the dynamic bearing capacity of the window glass decrease with the increase of the action time under tunnel aerodynamic pressure.Thus,the influence of the loading action time and fatigue under tunnel aerodynamic effects on the glass strength should be considered in the design for the bearing performance of high speed train window glass.Originality/value-The research results provide data support for the analysis of mechanical characteristics,damage mechanism,strength design and structural optimization of high speed train glass.

Effects of ferrites on magnetic transport properties in La_(2/3)Sr_(1/3)MnO_3/ferrites composites

Effects of soft-magnetic MnZn ferrite （Mn0.5Zn0.5Fe2O4, MZF） and hard-magnetic Ba ferrite （BaO.6Fe2O3, BaM） on the structure and magnetic transport properties of [La2/3Srl/3MnO3] （LSMO）/（x） [ferrites] （ferrites=MZF, BaM） composites have been investigated. It was found that the inclusion of MZF phase reduces magnetization and ferromagnetic-paramagnetic transition temperature （To） of the composites. With increasing the content of the dopants, the high-temperature magnetoresistance （MR） decreases, whereas low-temperature MR increases and reaches 42% at 150 K and x=0.1. However, for the LSMO/BaM composites, magnetization and ferromagneticparamagnetic transition temperature （To） decrease firstly as x〈5%, and then increase as x〉5%. The resistivity of the composites increases by five orders of magnitude at x=1% and is out of measured range at x=5%. High magnetic field has little effect on the resistivity and magnetoresistance originate from the pinning effect of BaM for the composites with x〉5%, which may grains.

Interference effects of two and three super-tall buildings under wind action

Most previous investigations on interference effects of tall buildings under wind actions focused on the wind induced interference effects between two buildings,and the interference effects of three or more buildings have seldom been studied so far due to the huge workload involved in experiments and data processing.In this paper,mean and dynamic force/response interference effects and peak wind pressure interference effects of two and three tall buildings,especially the three-building configuration,are investigated through a series of wind tunnel tests on typical tall building models using high frequency force balance technique and wind pressure measurements.Furthermore,the present paper focuses on the effects of parameters,including breadth ratio and height ratio of the buildings and terrain category,on the interference factors and derives relevant regression results for the interference factors.

Tunneling effect in cavity-resonator-coupled arrays

The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.

Tunneling of Bose-Einstein condensate and interference effect in a harmonic trap with a Gaussian energy barrier

The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Tunnel effects on ring road traffic flow based on an urgent-gentle class traffic model

To explore tunnel effects on ring road traffic flow,a macroscopic urgent-gentle class traffic model is put forward.The model identifies vehicles with urgent and gentle classes,chooses the tunnel speed limit as free flow speed to express the fundamental diagram in the tunnel,and adopts algebraic expressions to describe traffic pressure and sound speed.With two speed trajectories at the Kobotoke tunnel in Japan,the model is validated,with good agreement with observed data.Numerical results indicate that in the case of having no ramp effects,tunnel mean travel time is almost constant dependent on tunnel length.When initial density normalized by jam density is above a threshold of about 0.21,a traffic shock wave originates at the tunnel entrance and propagates backward.Such a threshold drops slightly as a result of on-ramp merging effect,the mean travel time drops as off-ramp diversion effect intensifies gradually.These findings deepen the understanding of tunnel effects on traffic flow in reality.

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation

The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.

Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis

The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.

Tunneling Effect Enhanced by Pd Screening as Main LENR Mechanism:A Brief Theoretical Impression

In this paper are illustrated the main features of tunneling travelling between two deuterons within a lattice. Considering thescreening effect due to lattice electrons we compare the d-d fusion rate evaluated from different authors assuming different screeningefficiency and different d-d potentials. Then, we propose an effective potential which describes very well the attractive contribution dueto Plasmon exchange between two deuterons and by means of it we will compute the d-d fusion rates for different energy values.

Si–Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate–drain underlap

Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.

Design and Analysis of Graphene Based Tunnel Field Effect Transistor with Various Ambipolar Reducing Techniques

The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.

Mechanism of Functional Responses to Loading of Carbon Fiber Reinforced Cement-based Composites

Single fiber pull-out testing was conducted to study the origin of the functional responses to loading of carbon fiber reinforced cement-based composites. The variation of electrical resistance with the bonding force on the fiber-matrix interface was measured. Single fiber electromechanical testing was also conducted by measuring the electrical resistance under static tension. Comparison of the results shows that the resistance increasing during single fiber pull-out is mainly due to the changes at the interface. The conduction mechanism of the composite can be explained by the tunneling model. The interfacial stress causes the deformation of interfacial structure and the interfacial debonding, which have influences on the tunneling effect and result in the change of resistance.

Tunnelling effect from a Vaidya-de Sitter black hole

In this paper, we extend Parikh＇ recent work to the Vaidya-de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability when the particle crosses the event horizon. From the tunnelling probability we also find a leading correction to the semiclassical emission rate.

Hawking radiation of a uniformly accelerating black hole

In this paper, we study the Hawking radiation via tunnelling from a uniformly accelerating black hole. Although the Bekenstein-Hawking entropy is proportional also to the area of the event horizon, the radius of it, rH, is a function of 0, which leads to the difficulties in the calculation of the emission rate. In order to overcome the mathematical difficulties, we propose a new technique to calculate the emission rate and the result obtained is reasonable.