A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator （RNG）. The generator consists of multiple tunneling junctions （MTJ） and a hybrid single electron transistor （SET）/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator, which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

Analytical solution of the Boltzmann-Poisson equation and its application to MIS tunneling junctions

In order to consider quantum transport under the influence of an electron-electron （e-e） interaction in a mesoscopic conductor,the Boltzmann equation and Poisson equation are investigated jointly.The analytical expressions of the distribution function for the Boltzmann equation and the self-consistent average potential concerned with e-e interaction are obtained,and the dielectric function appearing in the self-consistent average potential is naturally generalized beyond the Thomas-Fermi approximation.Then we apply these results to the tunneling junctions of a metal-insulator-semiconductor （MIS） in which the electrons are accumulated near the interface of the semiconductor,and we find that the e-e interaction plays an important role in the transport procedure of this system. The electronic density,electric current as well as screening Coulombic potential in this case are studied,and we reveal the time and position dependence of these physical quantities explicitly affected by the e-e interaction.

Nonequilibrium Effect in Ferromagnet-Insulator-Superconductor Tunneling Junction Currents

Nonequilibrium effect due to the imbalance in the number of the ? and ? spin electrons has been studied for the tunneling currents in the ferromagnet-insulator-superconductor (FIS) tunneling junctions within a phenomenological manner. It has been stated how the nonequilibrium effect should be observed in the spin-polarized quasiparticle tunneling currents, and pointed out that the detectable nonequilibrium effect could be found in the FIS tunneling junction at 77 K using HgBa2Ca2Cu3O8+? (Hg-1223) high-Tc superconductor rather than Bi2Sr2CaCu2O8+? (Bi-2212) one.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

Pseudospin-filter tunneling of massless Dirac fermions

The tunneling of the massless Dirac fermions through a vector potential barrier are theoretically investigated, wherethe vector potential can be introduced by very high and very thin (d-function) magnetic potential barriers. We showthat, distinct from the previously studied electric barrier tunneling, the vector potential barriers are more transparent forpseudospin-1/2 Dirac fermions but more obstructive for pseudospin-1 Dirac fermions. By tuning the height of the vectorpotential barrier, the pseudospin-1/2 Dirac fermions remain transmitted, whereas the transmission of the pseudospin-1Dirac fermions is forbidden, leading to a pseudospin filtering effect for massless Dirac fermions.

Terahertz high-sensitivity SIS mixer based on Nb–AlN–NbN hybrid superconducting tunnel junctions

The terahertz band,a unique segment of the electromagnetic spectrum,is crucial for observing the cold,dark universe and plays a pivotal role in cutting-edge scientific research,including the study of cosmic environments that support life and imaging black holes.High-sensitivity superconductor–insulator–superconductor(SIS)mixers are essential detectors for terahertz astronomical telescopes and interferometric arrays.Compared to the commonly used classical Nb/AlO_(x)/Nb superconducting tunnel junction,the Nb/AlN/NbN hybrid superconducting tunnel junction has a higher energy gap voltage and can achieve a higher critical current density.This makes it particularly promising for the development of ultra-wideband,high-sensitivity coherent detectors or mixers in various scientific research fields.In this paper,we present a superconducting SIS mixer based on Nb/AlN/NbN parallel-connected twin junctions(PCTJ),which has a bandwidth extending up to490 GHz–720 GHz.The best achieved double-sideband(DSB)noise temperature(sensitivity)is below three times the quantum noise level.

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices.

Effect of the mixing of s-wave and chiral p-wave pairings on electrical shot noise properties of normal metal/superconductor tunnel junctions

We study theoretically the electrical shot noise properties of tunnel junctions between a normal metal and a superconductor with the mixture of singlet s-wave and chiral triplet p-wave pairing due to broken inversion symmetry. We investigate how the shot noise properties vary as the relative amplitude between the two parity components in the pairing potential is changed. It is demonstrated that some characteristics of the electrical shot noise properties of such tunnel junctions may depend sensitively on the relative amplitude between the two parity components in the pairing potential, and some significant changes may occur in the electrical shot noise properties when the relative amplitude between the two parity components is varied from the singlet s-wave pairing dominated regime to the chiral triplet p-wave pairing dominated regime. In the chiral triplet p-wave pairing dominated regime, the ratio of noise power to electric current is close to 2e both in the in-gap and in the out-gap region. In the singlet s-wave pairing dominated regime, the value of this ratio is close to 4e in the inner gap region but may reduce to about 2e in the outer gap region as the relative amplitude of the chiral triplet pairing component is increased. The variations of the differential shot noise with the bias voltage also exhibit some significantly different features in different regimes. Such different features can serve as useful diagnostic tools for the determination of the relative magnitude of the two parity components in the pairing potential.

First-principles investigation GeP3 nanoribbon-based of quantum transport in tunneling junctions

Two-dimensional （2D） GeP3 has recently been theoretically proposed as a new low-dimensional ma- terial [Nano Lett. 17（3）, 1833 （2017）]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behav- ior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T（E） of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T（E） value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phe- nomenon is analyzed in detail.

Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes

The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction（FTJ） with symmetric electrodes is investigated.Different from the detrimental effect of the interface between the electrode and barrier in previous studies,the existence of an interface between the dielectric SrTiO_3 slab and ferroelectric BaTiO_3 slab in FTJs will enhance the tunneling electroresistance（TER） effect.Specifically,the interface with a lower dielectric constant and larger polarization pointing to the ferroelectric slab favors the increase of TER ratio.Therefore,interface control of high performance FTJ can be achieved.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co_(2)MnSi Electrodes

Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications.By performing extensive density functional theory calculations combined with the nonequilibrium Green’s function method,we explore the spin-dependent transport properties of a magnetic tunnel junction,in which a non-polar SrTiO_(3) barrier layer is sandwiched between two Heusler alloy Co_(2)MnSi electrodes.Theoretical results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization configuration.The transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration,resulting in a huge tunneling magnetoresistance(i.e.>10^(6)),which originates from the coherent spin-polarized tunneling,due to the half-metallic nature of Co_(2)MnSi electrodes and the significant spin-polarization of the interfacial Ti_(3)d orbital.

Spin torque oscillator based on magnetic tunnel junction with MgO cap layer for radio-frequency-oriented neuromorphic computing

Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consumption greatly.However,one critical challenge is to make the microwave emission frequency of the STO stay constant with a varying input current.In this work,we study the microwave emission characteristics of STOs based on magnetic tunnel junction with MgO cap layer.By applying a small magnetic field,we realize the invariability of the microwave emission frequency of the STO,making it qualified to act as artificial neuron.Furthermore,we have simulated an artificial neural network using STO neuron to recognize the handwritten digits in the Mixed National Institute of Standards and Technology database,and obtained a high accuracy of 92.28%.Our work paves the way for the development of radio-frequency-oriented neuromorphic computing systems.

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(~1.4×10^(4))in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS_(2) Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

Anomalous spin Josephson effect in spin superconductors

The spin superconductor state is the spin-polarized triplet exciton condensate,which can be viewed as a counterpart of the charge superconductor state.As an analogy of the charge Josephson effect,the spin Josephson effect can be generated in the spin superconductor/normal metal/spin superconductor junctions.Here we study the spin supercurrent in the Josephson junctions consisting of two spin superconductors with noncollinear spin polarizations.For the Josephson junctions with out-of-plane spin polarizations,the possibleπ-state spin supercurrent appears due to the Fermi momentum-splitting Andreev-like reflections at the normal metal/spin superconductor interfaces.For the Josephson junctions with in-plane spin polarizations,the anomalous spin supercurrent appears and is driven by the misorientation angle of the in-plane polarizations.The symmetry analysis shows that the appearance of the anomalous spin Josephson current is possible when the combined symmetry of the spin rotation and the time reversal is broken.

Tunnel Junction AlGaInP Light Emitting Diode

The n type GaAs substrates are used and their conductive type is changed to p type by tunnel junction for AlGaInP light emitting diodes(TJ LED),then n type GaP layer is used as current spreading layer.Because resistivity of the n type GaP is lower than that of p type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n type GaP current spreading layer.For TJ LED with 3μm n type GaP current spreading layer,experimental results show that compared with conventional LED with p type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66 7% at 100mA.

A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions

Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5） （thickness unit： nm） were nano-fabricated on the Si（100）/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography （EBL） and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance （TMR ＆ R） versus driving current （I） loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ＋1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.

The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells

This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.

Characteristics of Nb/Al superconducting tunnel junctions fabricated using ozone gas

To improve the energy resolution（？E） of Nb/Al superconducting tunnel junctions（STJs）, an ozone（O3） oxidation process has been developed to fabricate a thin defect-free tunnel barrier that simultaneously shows high critical current JC〉 1000 A/cm^2 and high normalized dynamic resistance RDA 〉 100 MΩ·μm^2, where A is the size of the STJ. The 50-μm^2 STJs produced by O3 exposure of 0.26 Pa·min with an indirect spray of O3 gas, which is a much lower level of exposure than the O2 exposure used in a conventional O2 oxidation process, exhibit a maximum JC= 800 A/cm^2 and a high RDA = 372 MΩ ·μm^2. The 100-pixel array of the 100-μm^2STJs produced using the same O3 oxidation conditions exhibits a constant leak current I leak= 14.9 ± 3.2 n A at a bias point around △ /e（where e is half the energy gap of an STJ）,and a high fabrication yield of 87%. Although the I leak values are slightly larger than those of STJs produced using the conventional O2 oxidation process, the STJ produced using O3 oxidation shows a ？E = 10 eV for the C-Kα line, which is the best value of our Nb/Al STJ x-ray detectors.

The p recombination layer in tunnel junctions for micromorph tandem solar cells

A new tunnel recombination junction is fabricated for n-i-p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon （a-Si：H） p^＋ recombination layer between the n a-Si：H and the p hydrogenated nanocrystalline silicon （nc-Si：H） layers to improve the performance of the n-i-p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si：H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω-cm^2 by using the optimized p-a-Si：H recombination layer. We obtain tandem solar cells with open circuit voltage Voc = 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.