Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer Biittiker formalism and taking into account the spin-orbit coupling （SOC）. It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier （FB） and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

Anisotropic spin transport and photoresponse characteristics detected by tip movement in magnetic single-molecule junction

Orientation-dependent transport properties induced by anisotropic molecules are enticing in single-molecule junctions.Here,using the first-principles method,we theoretically investigate spin transport properties and photoresponse characteristics in trimesic acid magnetic single-molecule junctions with different molecular adsorption orientations and electrode contact sites.The transport calculations indicate that a single-molecule switch and a significant enhancement of spin transport and photoresponse can be achieved when the molecular adsorption orientation changes from planar geometry to upright geometry.The maximum spin polarization of current and photocurrent in upright molecular junctions exceeds 90%.Moreover,as the Ni tip electrode moves,the tunneling magnetoresistance of upright molecular junctions can be increased to 70%.The analysis of the spin-dependent PDOS elucidates that the spinterfaces between organic molecule and ferromagnetic electrodes are modulated by molecular adsorption orientation,where the molecule in upright molecular junctions yields higher spin polarization.Our theoretical work paves the way for designing spintronic devices and optoelectronic devices with anisotropic functionality base on anisotropic molecules.

Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

Using the density functional theory and the nonequilibrium Green＇s function method, we studied the finite-bias quan- tum transport in a Cr/graphene/Cr magnetotunnel junction （MTJ） constructed by a single graphene layer sandwiched be- tween two semi-infinite Cr（111 ） electrodes. We found that the tunneling magnetoresistance （TMR） ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

We investigate the tunneling magnetoresistance via δ doping in a graphei2e-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the 8 doping. Also, both the transmission probability and the conductance at the paxallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping.

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.

Negative tunnel magnetoresistance in a quantum dot induced by interplay of a Majorana fermion and thermal-driven ferromagnetic leads

We investigate the spin-related currents and tunnel magnetoresistance through a quantum dot,which is side-coupled with a Majorana fermion zero mode and two thermal-driven ferromagnetic electrodes.It is found that the interplay of Majorana fermion and electrodes'spin polarization can induce a nonlinear thermal-bias spin current.This interplay also decreases the total magnitude of spin or charge current,in either parallel or antiparallel configuration.In addition,a thermal-driven negative tunnel magnetoresistance is found,which is an unique feature to characterize Majorana fermion.With large temperature difference,a step phenomenon is observed in gate tuned spin-up current.When the coupling between quantum dot and topological superconductor is strong enough,this step will evolve into a linear relation,revealing Majorana fermion's robustness.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient

We study the coutrol of gate voltage over the magnetization of a single-molecule magnet （SMM） weakly coupled to a ferromagnetic and a normal metal electrode in the presence of the temperature gradient between two electrodes. It is demonstrated that the SMM＇s magnetization can change periodically with periodic gate voltage due to the driving oI the temperature gradient. Under an appropriate matching of the electrode polarization, the temperature difference and the pulse width of gate voltage, the SMM＇s magnetization can be completely reversed in a period of gate voltage. The corresponding flipping time can be controlled by the system parameters. In addition, we also investigate the tunneling anisotropic magnetoresistance （TAMFt） of the device in the steady state when the ferromagnetic electrode is noncollinear with the easy axis of the SMM, and show the jump characteristic of the TAMR.

Structure and Giant Magnetoresistance in Zinc Ferrite

The tunneling structure of ZnFe3-xO4 ferrite was confirmed by high resolation electron microscopy （HREM）, non-Ohmic Ⅰ-Ⅴ curve and kinetics for α-Fe2O3 isothermal phase transformation. The Zn0.41 Fe2.59O4/ α-Fe2O3 two-phase polycrystalline has a huge tunneliug magnetorsistance （ TMR ） mainly caused by the tummeliug structure. The Zn0.41Fe2.59O4 grains are separated by insulatiug α-Fe2O3 thin layer boundaries. The pattern of nanostructure uns verified by HREM.

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically.The results reveal a large tunneling magnetoresistance up to 3230%by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet.The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations.The key role of the organic ferromagnet in generating the large magnetoresistance is explored,where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves.The effects of intrinsic interactions in the organic ferromagnet including electron–lattice interaction and spin coupling with radicals on the magnetoresistance are discussed.This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.

Visualization of tunnel magnetoresistance effect in single manganite nanowires

We reported a study of tunnel magnetoresistance(TMR)effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging.TMR value up to 290%has been observed in single(La1-yPry)1-x CaxMnO3 nanowires with varying width.We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions.Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

Transport and Magnetic Properties of Nanosized La_(0.6)Sm_(0.1)Sr_(0.3)MnO_3+xCoO Composites

The composites La0.6Sm0. 1Sr0.3MnO3 ＋ x CoO （x = 0.0, 0.1, 0.2, 0.3, 0.4 mol）, named as A x samples, were synthesized by the sol-gel technique to derive homogeneous CoO-coated composites. CoO addition induces an increase of resistivity （ρ） and a decrease of Curie temperature （TC）, magnetization, and Tpat which the p peak is located. It has been concluded that the resistivity below Tp fits well with the equation ρ = ρ0 ＋ ρ2 T^2 ＋ ρ4.5 T^4.5, indicating the importance of grain/domain boundary effects, the electron-electron scattering process, and the two magnon scattering process. On the other hand, the paramagnetic insulating region may be explained by using adiabatic small polaron hopping mechanism, thereby indicating that polaron hopping might be responsible for the conduction mechanism. Magnetoresistance results were explained by a two-level model of tunneling MR and percolation model.

86% TMR at 4.2 K for Amorphous Magnetic-Tunnel-Junctions with Co_(60)Fe_(20)B_(20) as Free and Pinned Layers

Single barrier magnetic-tunnel-junctions (MTJs) with the layer structure of Ta(5)/Cu(30)/Ta(5)/Ni79Fe21(5)/Ir22 Mn78(12)/Co60Fe20B20(4)/Al(0.8)-oxide/Co60Fe20B20(4)/Cu(30)/Ta(5) [thickness unit: nm] using the amorphous Co60Fe20B20 alloy as free and pinned layers were micro-fabricated. The experimental investigations showed that the tunnel magnetoresistance (TMR) ratio and the resistance decrease with increasing dc bias voltage from 0 to 500 mV or with increasing temperature from 4.2 K to RT. A high TMR ratio of 86.2% at 4.2 K, which corresponds to the high spin polarization of Co60Fe20B20, 55%, was observed in the MTJs after annealing at 270℃ for 1 h. High TMR ratio of 53.1%, low junction resistance-area product RS of 3.56 kΩμm2, small coercivity HC of ≤4 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V1/2 of greater than 570 mV at RT have been achieved in such Co-Fe-B MTJs.

Kondo effect in a deformed molecule coupled asymmetrically to ferromagnetic electrodes

The nonequilibrium Kondo effect is studied in a molecule quantum dot coupled asymmetrically to two ferromagnetic electrodes by employing the nonequilibrium Green function technique. The current-induced deformation of the molecule is taken into account, modeled as interactions with a phonon system, and phonon-assisted Kondo satellites arise on both sides of the usual main Kondo peak. In the antiparallel electrode configuration, the Kondo satellites can be split only for the asymmetric dot-lead couplings, distinguished from the parallel configuration where splitting also exists, even though it is for symmetric case. We also analyze how to compensate the splitting and restore the suppressed zero-bias Kondo resonance. It is shown that one can change the TMR ratio significantly from a negative dip to a positive peak only by slightly modulating a local external magnetic field, whose value is greatly dependent on the electron-phonon coupling strength.

Change of Electronic Structure and Magnetic Properties with MgO and Fe Thicknesses in Fe/MgO/Fe Magnetic Tunnel Junction

The effects of the thickness of MgO and Fe on the electronic structure and magnetic properties of Fe/MgO/Fe magnetic tunnel junction was studied using the first principle method. Two series of models with MgO of different thicknesses： Fe（3）MgO（t）Fe（3） （t-=1,3,5,7） and with Fe of varied thicknesses： Fe（t）MgO（3）Fe（t） （t=3,4,5,6,7） were established. Calculated results show that in all the models the magnetic moment of Fe increases at the Fe/MgO interface and surface as compared with that of the inner layers. The mag- netic moment of each Fe layer was found to be independent of MgO thicknesses, while the spin-polarization of Fe layer at the interface shows a slight change in function of the MgO thicknesses. The tunneling magnetoresistance （TMR） ratio estimated by the Julliere model has the same change tendency as the spin-polarization has, and the largest value is obtained at the MgO thickness of 5 atomic layers. When the Fe thickness increases, the spin-polarization of interface Fe layer follows up an increase with a decrease. The highest TMR value is achieved when the Fe thickness is of 4 atomic layers.

Developments and Applications of Tunneling Magnetoresistance Sensors

Magnetic sensors based on tunneling magnetoresistance(TMR)effect exhibit high sensitivity,small size,and low power consumption.They have gained a lot of attention and have potential applications in various domains.This study first introduces the development history and basic principles of TMR sensors.Then,a comprehensive description of TMR sensors linearization and Wheatstone bridge configuration is presented.Two key performance parameters,the field sensitivity and noise mechanisms,are considered.Finally,the emerging applications of TMR sensors are discussed.

Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions

Magnetic tunnel junctions(MTJs)switched by spin-orbit torque(SOT)have attracted substantial interest owing to their advantages of ultrahigh speed and prolonged endurance.Both field-free magnetization switching and high tunneling magnetoresistance(TMR)are critical for the practical application of SOT magnetic random access memory(MRAM).In this work,we propose an MTJ structure based on an iridium(Ir)bottom layer.Ir metal is a desirable candidate for field-free SOT switching owing to its strong intrinsic spin Hall conductivity(SHC),which can be enhanced via doping.Herein,we study TMR in Ir-based MTJs with symmetric and asymmetric structures.Ir-based MTJs exhibit large TMR,which can be further enhanced by heavy metal symmetry owing to the resonant tunneling effect.Our comprehensive investigations illustrate that Ir-based MTJs are promising candidates for realizing SOT switching and high TMR.