Relativistic effect of pseudospin symmetry and tensor coupling on the Mie-type potential via Laplace transformation method

A relativistic Mie-type potential for spin-1/2 particles is studied. The Dirac Hamiltonian contains a scalar S（r） and a vector V（r） Mie-type potential in the radial coordinates, as well as a tensor potential U（r） in the form of Coulomb potential. In the pseudospin（p-spin） symmetry setting Σ = Cps and Δ = V（r）, an analytical solution for exact bound states of the corresponding Dirac equation is found. The eigenenergies and normalized wave functions are presented and particular cases are discussed with any arbitrary spin–orbit coupling number κ. Special attention is devoted to the caseΣ = 0 for which p-spin symmetry is exact. The Laplace transform approach（LTA） is used in our calculations. Some numerical results are obtained and compared with those of other methods.

Periodic Solutions of Mixed Type p-Laplacian Equations with Deviating Arguments

Based on Mansevich-Mawhin continuation theorem and some analysis skill,some sufficient conditions for the existence of periodic solutions for mixed type p-Laplacian equation with deviating arguments are established,which are complement of previously known results.

Higher-Order Duality for Minimax Fractional Type Programming Involving Symmetric Matrices

Convexity and generalized convexity play important roles in optimization theory. With the development of programming problem, there has been a growing interest in the higher-order dual problem and a lot of related generalized convexities are given. In this paper, we give the convexity of (F, α ,p ,d ,b , φ )β vector-pseudo- quasi-Type I and formulate a higher-order duality for minimax fractional type programming involving symmetric matrices, and give the weak, strong and strict converse duality theorems under the condition of higher-order (F, α ,p ,d ,b , φ )β vector-pseudoquasi-Type I.

微紫青霉菌(Penicillium janthinellum)P-type ATPase及金属硫蛋白相关基因的克隆

本研究以高抗多种重金属盐的微紫青霉菌(Penicillium janthinellum)菌株GXCR为材料构建基因组fosmid文库。其插入片段集中在36～50kb,含13348个克隆,重组率为100%,大约覆盖了GXCR基因组的14.83倍。基于序列特异性和简并引物,利用PCR扩增分析了与酿酒酵母(Saccharomyces cerevisiae)重金属盐抗性相关的CRS5和CUP2基因;基于兼并引物和序列特异性引物,利用PCR扩增分析了GXCR的P-type ATPase基因。通过菌落原位杂交和Southern blot鉴定了一个含铜转运P-type ATPase基因的阳性fosmid克隆,经亚克隆测序分析表明该基因与棒曲霉(Aspergillus clavatus菌株)NRRL1的P-type copper ATPase相似性达97%。没有筛选到与CRS5和CUP2基因同源的克隆,说明GXCR中可能不存在与酿酒酵母CUP2和CRS5高度同源的MT基因,同时也暗示酵母与丝状真菌的重金属盐的抗性机制有本质上的差异或者独特性。

棉花P-type ATPases基因的克隆及表达分析

为了探明棉花P-type ATPases基因在植物不同组织和多种逆境条件下的表达情况,利用棉花黄萎病菌的P-type ATPases蛋白序列,在GenBank中搜索棉花EST序列,得到2个同源的棉花EST片段,结合RACE和Genome walking获得了这个基因的完整读码框序列,其开放阅读框长度为3 570 bp,编码1 190个氨基酸,与毛果杨、蓖麻的同源性达86%左右,将其命名为Gbpatp。洋葱表皮亚细胞定位观察结果显示,Gbpatp编码的蛋白分布在细胞膜上。RT-PCR技术检测组织表达特异性分析表明,P-type ATPases在茎和棉絮中的表达量较高,在种子中低水平表达,在叶片和花蕾中表达量极低,说明Gbpatp可能与棉花较成熟的器官茎、棉絮和种子的生长发育密切相关。在逆境胁迫中发现,干旱处理后Gbpatp的表达强烈,并且随处理时间延长表达量逐渐增加;重金属Cu2+处理24 h后Gbpatp表达量升高,但48 h急剧下降;Gbpatp在低温处理下也有轻微表达。激素诱导后发现,Gbpatp对赤霉素和脱落酸均有响应,随胁迫时间延长其表达量仍能维持在一定水平。

Some Strong Laws of Large Numbers for Blockwise Martingale Difference Sequences in Martingale Type p Banach Spaces

For a blockwise martingale difference sequence of random elements {Vn, n ≥ 1} taking values in a real separable martingale type p （1 ≤ p ≤ 2） Banach space, conditions are provided for strong laws of large numbers of the form limn→∞ Vi/gn = 0 almost surely to hold where the constants gn ↑∞. A result of Hall and Heyde [Martingale Limit Theory and Its Application, Academic Press, New York, 1980, p. 36] which was obtained for sequences of random variables is extended to a martingale type p （1〈 p ≤2） Banach space setting and to hold with a Marcinkiewicz-Zygmund type normalization. Illustrative examples and counterexamples are provided.

The algorithm for the piezoresistance coefficients of p-type polysilicon

In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole con- duction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11,π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results.

以煤矸石为原料制备P型沸石微粉的研究

基于煤矸石利用率较低的现状和煤矸石富含硅铝成分的特征,提出了将煤矸石废弃物制备成沸石分子筛矿物微粉的思路。以七台河市煤矸石为原材料,采用碱融-水热法合成P型沸石分子筛微粉末,探讨了陈化温度、液固比、碱固比等反应条件对P型分子筛形貌的影响,获得最佳工艺条件为:硅铝比为1∶1,陈化温度为50℃,液固比为7∶1,碱固比为0.8∶1。SEM测试结果显示,合成产物的微观形貌为粒径6μm左右的球形沸石分子筛。XRD测试结果表明,产物特征峰与NaP型分子筛标准特征峰相吻合。

Kirchhoff-Type Problem with Mixed Boundary Condition in a Variable Exponent Sobolev

.In this paper,we consider a mixed boundary value problem for the stationary Kirchhoff-type equation containing p(-)-Laplacian.More precisely,we are concerned with the problem with the Dirichlet condition on a part of the boundary and the Steklov boundary condition on an another part of the boundary.We show the existence of at least one,two or infinitely many non-trivial weak solutions according to hypotheses on given functions.

Existence of Weak Solution for p(x)-Kirchhoff Type Problem Involving the p(x)-Laplacian-like Operator by Topological Degree

In this paper,we study the existence of"weak solution"for a class of p(x)-Kirchhoff type problem involving the p(x)-Laplacian-like operator depending on two real parameters with Neumann boundary condition.Using a topological degree for a class of demicontinuous operator of generalized(S_(+))type and the theory of the variable exponent Sobolev space,we establish the existence of"weak solution"of this problem.

Structure and Electrochemical Properties of A_2B_7-Type La-Mg-Ni Hydrogen Storage Alloys

Investigation of alloy structure shows that La2-xMgxNi7 （x = 0.3 - 0.8） alloys are mainly com- posed of Ce/Ni7-type, Gd2Co7-type and PuNi3-type phase. The influence of Mg content in alloys on the phase structure is great, resulting in a linear decrease of the unit cell parameters of main phases and increase of hydrogen absorption/desorption plateau as Mg content increases. Electrochemical measurements show that as the Mg content increases, the discharge capacity of alloy electrodes first increases and then decreases. The cyclic stability presents a deteriorative trend. La1.4Mg0.6 Ni7 alloy electrode exhibits the maximum electrochemical discharge capacity （378 mAh·g^-1）, and the La1.6Mg0.4Ni7 alloy electrode shows the best cyclic stability （S270 = 81%）.

β-Ga_(2)O_(3)的p型掺杂研究进展

β-Ga_(2)O_(3)具有超宽禁带宽度、高击穿场强、较高的巴利加优值等优点使其成为一种新兴半导体材料,在高功率电子器件、气体传感器、日盲紫外探测器等方面有着极大的应用潜力,但p型掺杂难的问题成为了β-Ga_(2)O_(3)发展的巨大障碍。本文首先简要概述了β-Ga_(2)O_(3)的优点,并介绍了其晶体结构和基本性质。其次,说明了β-Ga_(2)O_(3)的本征缺陷,尤其是氧空位对导电性能的影响。然后,详细讨论了β-Ga_(2)O_(3) p型掺杂的研究现状,包括p型掺杂困难的原因和N掺杂、Mg掺杂、Zn掺杂、其他受主元素掺杂、两种元素共掺杂以及其他方法。最后,总结并对β-Ga_(2)O_(3)未来的发展进行了展望。

Two Optimal Inequalities Related to the Sándor-Yang Type Mean and One-parameter Mean

In this paper, we establish two optimal the double inequalities for Sandor- Yang type mean and one-parameter mean.

Visible light-responsive carbon-decorated p-type semiconductor CaFe_2O_4 nanorod photocatalyst for efficient remediation of organic pollutants

We report the fabrication and photocatalytic property of a composite of C/CaFe2O4nanorods(NRs)in an effort to reveal the influence of carbon modification.It is demonstrated that the photocatalytic degradation activity is dependent on the mass ratio of C to CaFe2O4.The optimal carbon content is determined to be58wt%to yield a methylene blue(MB)degradation rate of0.0058min.1,which is4.8times higher than that of the pristine CaFe2O4NRs.The decoration of carbon on the surface of CaFe2O4NRs improves its adsorption capacity of the MB dye,which is specifically adsorbed on the surface as a monolayer according to the adsorption isotherm analysis.The trapping experiments of the reactive species indicate that superoxide radicals(.O2)are the main active species responsible for the removal of MB under visible‐light irradiation.Overall,the unique feature of carbon coating enables the efficient separation and transfer of photogenerated electrons and holes,strengthens the adsorption capacity of MB,and improves the light harvesting capability,hence enhancing the overall photocatalytic degradation of MB.

具有p-Laplacian算子的分数阶问题共振正解的存在性

本文研究了具有p-拉普拉斯算子的分数阶微分方程在两种边界条件下的共振正解存在的问题.利用Leggett-Williams范型定理的方法,获得了一些新的存在性结果,推广了该类问题已有的研究结果.

Vector-Valued Dirichlet-Type Functions on the Unit Ball of C^n

The vector-valued Dirichlet-type spaces on the unit ball of C^n isintroduced. We discuss the pointwise multipliers of Dirichlet-type spaces. Sufficient conditions ofthe pointwise multipliers of D_(mu)~2 for 0<=mu <2 if n=1 or D_(mu,q)~2 for 0 =2 aregiven. Finally, Rademacher p-type space is characterized by vector-valued sequence spaces.

Recent progress of the native defects and p-type doping of zinc oxide

Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.

A Novel Sr_2CuInO_3S p-type semiconductor photocatalyst for hydrogen production under visible light irradiation

A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations （DFT） and electrochem ical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocat alytic hydrogen production experiments under a visible light irradiation （A〉420 nm） were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3S and Rh was found to be the best one among the tested ones.

Development in p-type Doping of ZnO

Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.