A specific revised HFCVD apparatus and a novel process combining HFCVD and polishing technique were presented to deposit the micro-and nano-crystalline multilayered ultra-smooth diamond（USCD） film on the interior-ho...A specific revised HFCVD apparatus and a novel process combining HFCVD and polishing technique were presented to deposit the micro-and nano-crystalline multilayered ultra-smooth diamond（USCD） film on the interior-hole surface of WC-Co drawing dies with aperture ranging from d1.0 mm to 60 mm.Characterization results indicate that the surface roughness values（Ra） in the entry zone,drawing zone and bearing zone of as-fabricated USCD coated drawing die were measured as low as 25.7,23.3 and 25.5 nm,respectively.Furthermore,the friction properties of USCD films were examined in both dry sliding and water-lubricating conditions,and the results show that the USCD film presents much superior friction properties.Its friction coefficients against ball-bearing steel,copper and silicon nitride balls（d4 mm）,is always lower than that of microcrystalline diamond（MCD） or WC-Co sample,regardless of the lubricating condition.Meanwhile,it still presents competitive wear resistance with the MCD films.Finally,the working lifetime and performance of as-fabricated USCD coated drawing dies were examined under producing low-carbon steel pipes in dry-sliding and water-lubricating conditions.Under the water-lubricating drawing condition,its production significantly increases by about 20 times compared with the conventional WC-Co drawing dies.展开更多
A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density rea...A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.展开更多
The modern optics industry demands rigorous surface quality with minimum defects,which presents challenges to optics machining technologies.There are always certain defects on the final surfaces of the compo-nents for...The modern optics industry demands rigorous surface quality with minimum defects,which presents challenges to optics machining technologies.There are always certain defects on the final surfaces of the compo-nents formed in conventional contacting machining proc-esses,such as micro-cracks,lattice disturbances,etc.It is especially serious for hard-brittle functional materials,such as crystals,glass and ceramics because of their special characteristics.To solve these problems,the atmospheric pressure plasma polishing(APPP)method is developed.It utilizes chemical reactions between reactive plasma and surface atoms to perform atom-scale material removal.Since the machining process is chemical in nature,APPP avoids the surface/subsurface defects mentioned above.As the key component,a capacitance coupled radio-fre-quency plasma torch is first introduced.In initial opera-tions,silicon wafers were machined as samples.Before applying operations,both the temperature distribution on the work-piece surface and the spatial gas diffusion in the machining process were studied qualitatively by finite element analysis.Then the following temperature measurement experiments demonstrate the formation of the temperature gradient on the wafer surface predicted by the theoretical analysis and indicated a peak temper-ature about 90uC in the center.By using commercialized form talysurf,the machined surface was detected and the result shows regular removal profile that corresponds well to the flow field model.Moreover,the removal profile also indicates a 32 mm^(3)/min removal rate.By using atomic force microscopy(AFM),the surface roughness was also measured and the result demonstrates an Ra 0.6 nm surface roughness.Then the element composition of the machined surface was detected and analyzed by X-ray photoelectron spectroscopy(XPS)technology.The results also demonstrate the occurrence of the anticipated main reactions.All the experiments have proved that this atmospheric pressure plasma polishing method has the potential to achieve the manufacture of high quality optical surfaces.展开更多
CsPbI_(2)Br is an ideal inorganic perovskite material with a reasonable bandgap for solar cell applications because of its advantage of superior thermal and phase stability. However, the performance of CsPbI2Br based ...CsPbI_(2)Br is an ideal inorganic perovskite material with a reasonable bandgap for solar cell applications because of its advantage of superior thermal and phase stability. However, the performance of CsPbI2Br based solar cells highly relied on the perovskite crystallization process along with the interfacial contact engineering process between CsPbI_(2)Br perovskite and charge-transporting layers. In this work, a programmable crystallization method is developed to obtain ultra-smooth CsPbI_(2)Br perovskite film with a well-engineered contact interface in perovskite solar cells. This method combines a pre-stand-by process with a programmable gradient thermal engineering process, which mediates the crystal growth dynamics process of CsPbI2Br perovskite by controlling the release of dimethyl sulfoxide(DMSO) from its coordinates with the perovskite film, leading to high-quality CsPbI_(2)Br film with large-scale crystalline grains, reduced surface roughness, and low trap density. Fabricated perovskite devices based on CsPbI_(2)Br film obtained by this method deliver power conversion efficiency of 14.55 %;meanwhile, the encapsulated CsPbI_(2)Br perovskite device achieves a maximum efficiency of 15.07 %. This decent solar conversion efficiency demonstrates the effectiveness of the programmable crystallization method used in this work,which shows great potential as a universal approach in obtaining high-quality CsPbI_(2)Br perovskite films for fabricating high-efficiency inorganic perovskite solar cells.展开更多
基金Project(51005154) supported by the National Natural Science Foundation of ChinaProject(12CG11) supported by the Chenguang Program of Shanghai Municipal Education Commission,ChinaProject(201104271) supported by the China Postdoctoral Science Foundation Special Funded Project
文摘A specific revised HFCVD apparatus and a novel process combining HFCVD and polishing technique were presented to deposit the micro-and nano-crystalline multilayered ultra-smooth diamond（USCD） film on the interior-hole surface of WC-Co drawing dies with aperture ranging from d1.0 mm to 60 mm.Characterization results indicate that the surface roughness values（Ra） in the entry zone,drawing zone and bearing zone of as-fabricated USCD coated drawing die were measured as low as 25.7,23.3 and 25.5 nm,respectively.Furthermore,the friction properties of USCD films were examined in both dry sliding and water-lubricating conditions,and the results show that the USCD film presents much superior friction properties.Its friction coefficients against ball-bearing steel,copper and silicon nitride balls（d4 mm）,is always lower than that of microcrystalline diamond（MCD） or WC-Co sample,regardless of the lubricating condition.Meanwhile,it still presents competitive wear resistance with the MCD films.Finally,the working lifetime and performance of as-fabricated USCD coated drawing dies were examined under producing low-carbon steel pipes in dry-sliding and water-lubricating conditions.Under the water-lubricating drawing condition,its production significantly increases by about 20 times compared with the conventional WC-Co drawing dies.
文摘A New method,named atmospheric pressure plasma polishing,for the ultra-smooth machining of the silicon based materials is introduced.By inputting the CF4 gas into the atmospheric pressure plasma flame,high density reactive radicals will be generated,which will then react with the silicon based materials.The reaction product is the vaporization of the SiF4,which can be easily processed.In this way,the atomic scale material removal can be realized and the defect free ultra-smooth surface can be obtained.An experimental setup is built up,and the SiC polishing experiment is carried out.The AFM test result shows that the finished surface roughness (Ra) can be improved from 4.529 nm to 0.926 nm in 3 minutes.
基金supported by the National Natural Science Foundation of China(Grant Nos.50535020,50775055)the Defense Advanced Research Foundation(No.9140A180202–06HT0132)the Natural Science Foundation of Heilongjiang Province(No.E200622).
文摘The modern optics industry demands rigorous surface quality with minimum defects,which presents challenges to optics machining technologies.There are always certain defects on the final surfaces of the compo-nents formed in conventional contacting machining proc-esses,such as micro-cracks,lattice disturbances,etc.It is especially serious for hard-brittle functional materials,such as crystals,glass and ceramics because of their special characteristics.To solve these problems,the atmospheric pressure plasma polishing(APPP)method is developed.It utilizes chemical reactions between reactive plasma and surface atoms to perform atom-scale material removal.Since the machining process is chemical in nature,APPP avoids the surface/subsurface defects mentioned above.As the key component,a capacitance coupled radio-fre-quency plasma torch is first introduced.In initial opera-tions,silicon wafers were machined as samples.Before applying operations,both the temperature distribution on the work-piece surface and the spatial gas diffusion in the machining process were studied qualitatively by finite element analysis.Then the following temperature measurement experiments demonstrate the formation of the temperature gradient on the wafer surface predicted by the theoretical analysis and indicated a peak temper-ature about 90uC in the center.By using commercialized form talysurf,the machined surface was detected and the result shows regular removal profile that corresponds well to the flow field model.Moreover,the removal profile also indicates a 32 mm^(3)/min removal rate.By using atomic force microscopy(AFM),the surface roughness was also measured and the result demonstrates an Ra 0.6 nm surface roughness.Then the element composition of the machined surface was detected and analyzed by X-ray photoelectron spectroscopy(XPS)technology.The results also demonstrate the occurrence of the anticipated main reactions.All the experiments have proved that this atmospheric pressure plasma polishing method has the potential to achieve the manufacture of high quality optical surfaces.
基金scientific research starting the project of SWPU (X151528)。
文摘CsPbI_(2)Br is an ideal inorganic perovskite material with a reasonable bandgap for solar cell applications because of its advantage of superior thermal and phase stability. However, the performance of CsPbI2Br based solar cells highly relied on the perovskite crystallization process along with the interfacial contact engineering process between CsPbI_(2)Br perovskite and charge-transporting layers. In this work, a programmable crystallization method is developed to obtain ultra-smooth CsPbI_(2)Br perovskite film with a well-engineered contact interface in perovskite solar cells. This method combines a pre-stand-by process with a programmable gradient thermal engineering process, which mediates the crystal growth dynamics process of CsPbI2Br perovskite by controlling the release of dimethyl sulfoxide(DMSO) from its coordinates with the perovskite film, leading to high-quality CsPbI_(2)Br film with large-scale crystalline grains, reduced surface roughness, and low trap density. Fabricated perovskite devices based on CsPbI_(2)Br film obtained by this method deliver power conversion efficiency of 14.55 %;meanwhile, the encapsulated CsPbI_(2)Br perovskite device achieves a maximum efficiency of 15.07 %. This decent solar conversion efficiency demonstrates the effectiveness of the programmable crystallization method used in this work,which shows great potential as a universal approach in obtaining high-quality CsPbI_(2)Br perovskite films for fabricating high-efficiency inorganic perovskite solar cells.
