Compact Coplanar Epsilon-Negative Antenna with Ultra-Wide Band Character

In this paper, a compact coplanar epsilon.negative(ENG) antenna is proposed with ultra.wide operation band and small size of 18×11.5 mm2. The proposed antenna is designed based on a coplanar.waveguide(CPW) feeding antenna, and thus the via.free structure is employed to realize the ENG unit cell, which is convenient to tune the frequency of zeroth.order resonance(ZOR) and extends the ZOR bandwidth. The high.order resonant frequencies are achieved and mainly determined by the separate slots that are located between the radiating patch and the ground plane. Adding the left.handed inductance between the radiating patch and ground has slight impact on the high.order resonant frequencies, and then the ultra.wide band is achieved by merging the ZOR bandwidth with the high.order resonant bandwidths. The ground plane primarily works as a matching network for the proposed antenna. Although it generates a low.frequency resonance, the performance is undesirable due to the impedance mismatching. The measured results show that the reflection coefficient, |S11| <.10 d B, is in a wide frequency range from 5.25 to 13 GHz, which covers the upper operation band of UWB communication. Also, the antenna contains relatively stable gains and omni.directional radiation patterns.

Numerical simulation of the coupling of ultra-wide band electromagnetic pulse into landmine by aperture

The modern landmine＇s electronic fuse is susceptible to strong interference or can even be damaged by the ultra-wide band electromagnetic pulse（UWB-EMP）. The finite-difference time-domain（FDTD） method in lossy media with cylindrical coordinates is used to study the interactions of the UWB-EMP with the landmine. First, the coupling of UWB-EMP into the landmine shielding shell through an aperture is numerically simulated. Second, the coupled electromagnetic field of mine shells made of different shielding materials and with apertures of different sizes is plotted. Third, the aperture coupling laws of UWB-EMP into shells are analyzed and categorized. Such an algorithm is capable of effectively preventing ladder similar errors, and consequently improving the calculation precision, and in addition to adopting the message passing interface（MPI） parallel method to divide the total calculating range into more sub-ranges, the overall calculating efficiency is greatly increased. These calculations are surely a constructive reference for modern landmine design against electromagnetic damage.

Novel indoor positioning system based on ultra-wide bandwidth

To tackle challenges such as interference and poor accuracy of indoor positioning systems,a novel scheme based on ultra-wide bandwidth(UWB)technology is proposed.First,we illustrate a distance measuring method between two UWB devices.Then,a Taylor series expansion algorithm is developed to detect coordinates of the mobile node using the location of anchor nodes and the distance between them.Simulation results show that the observation error under our strategy is within 15 cm,which is superior to existing algorithms.The final experimental data in the hardware system mainly composed of STM32 and DW1000 also confirms the performance of the proposed scheme.

Fully-integrated ultra-wide band LNA in 0.18μm CMOS technology for 3-10 GHz applications

The paper presents a fully integrated ultra-wide band(UWB)low noise amplifier(LNA)for 3-10 GHz applications.It employs self-biased resistive-feedback and current-reused technique to achieve wide input matching and low power characteristics.An improved biased architecture is adopted in the second stage to attain a better gain-compensation performance.The design is verified with TSMC standard 1 P6 M 0.18μm RF CMOS process.The measurement results show that the parasitic problem of the transistors at high frequencies is solved.A high and flat S21 of 9.7±1.5 dB and the lowest NF 3.5 dB are achieved in the desired frequency band.The power consumption is only 7.5 mA under 1.6 V supply.The proposed LNA achieves broadband flat gain,low noise,and high linearity performance simultaneously,allowing it to be used in 3-10 GHz UWB applications.

Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material

As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.

Design of Integrated Triple Band Notched for Ultra-Wide Band Microstrip Antenna

Ultra-wideband (UWB) is one of the recent topics that received a great concern from academia and industry. However, UWB found many difficulties to be standardized due to the overlay working that made UWB an important potential interference source to many licensed and unlicensed spectrum throughout the band 3.1 to 10.6 GHz. This paper demonstrates the design of integrated triple band notched for UWB Microstrip antenna. We simulated UWB short range systems which require low power and these are built using inexpensive digital components. We proposed a compact triple band notched CPW (Co-planar Waveguide) fed Micro strip Antenna (MSA) for UWB. This band-notched antenna has rejection characteristics at 3.2 GHz (for Wi-MAX band 3.16 to 3.32 GHz), at 5.5 GHz (for WLAN 2 band—5.3 to 5.72 GHz) and at 7.9 GHz (for ITU band 7.72 GHz to 8.13 GHz). The simulation was done using IE3D simulator.

Evaluation of System Performance of Ultra-Wide Band Jointing in MC Signaling in Correlated Environments

The evaluation of System Performance of UWB (ultra-wide band) jointing in MC (multi-carrier) signaling in correlated environments is presented in the report. The correlated Nakagami-m statistical distribution for the multipath fading model is assumed in this scenario. In fact to establish the model for analyzing in this article is using MC-CDMA (multi-carrier code-division multiple-access) system characterization combined with a UWB scheme. The average BER (bit error rate) is calculated and compared to a special case of previously published results. Studied results from this paper can be implied to approve the system performance for a UWB system combined with a MC-CDMA wireless communication system. It is worth noting that the Nakagami-m distributed fading parameter significantly dominates UWB system performance when it cooperates with MC signaling under a fading environment. Finally, it is worthy of noting that when the SNR (signal-to-noise ratio) at system’s receiver reaches a preset high threshold value, the parameter of power decay ratio effect could be not included.

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

As one of the ultra-wide bandgap {UWBG)semiconducting materials,gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MWcm,which offers an alternative platform for various applications such as high performance power switches,RF amplifiers,solar blind photodetectors,and harsh environment signal processing.

Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s[1,2].

Different Feeding Techniques of Microstrip Patch Antennas with Spiral Defected Ground Structure for Size Reduction and Ultra-Wide Band Operation

Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagnetic band-gap structures by adjusting the capacitance and changing the inductance through varying the width and length of spiral defected ground structure. Then by applying the three different spirals shapes (one, two and four arms) as the ground plane of microstrip patch antenna with different feeding techniques to create multi or ultra wide-band, improve the antenna gain and reduce the antenna size, it is found that the four arms spiral defected ground structure of microstrip patch antenna with offset feed gives good performance, electrical size reduction to about 75% as compared to the original patch size and ultra-wide bandwidth extends from 2 GHz up to 12 GHz with ?8 dB impedance bandwidth.

Retinal vascular morphological characteristics in diabetic retinopathy: an artificial intelligence study using a transfer learning system to analyze ultra-wide field images

AIM:To investigate the morphological characteristics of retinal vessels in patients with different severity of diabetic retinopathy(DR)and in patients with or without diabetic macular edema(DME).METHODS:The 239 eyes of DR patients and 100 eyes of healthy individuals were recruited for the study.The severity of DR patients was graded as mild,moderate and severe non-proliferative diabetic retinopathy(NPDR)according to the international clinical diabetic retinopathy(ICDR)disease severity scale classification,and retinal vascular morphology was quantitatively analyzed in ultra-wide field images using RU-net and transfer learning methods.The presence of DME was determined by optical coherence tomography(OCT),and differences in vascular morphological characteristics were compared between patients with and without DME.RESULTS:Retinal vessel segmentation using RU-net and transfer learning system had an accuracy of 99%and a Dice metric of 0.76.Compared with the healthy group,the DR group had smaller vessel angles(33.68±3.01 vs 37.78±1.60),smaller fractal dimension(Df)values(1.33±0.05 vs 1.41±0.03),less vessel density(1.12±0.44 vs 2.09±0.36)and fewer vascular branches(206.1±88.8 vs 396.5±91.3),all P<0.001.As the severity of DR increased,Df values decreased,P=0.031.No significant difference between the DME and non-DME groups were observed in vascular morphological characteristics.CONCLUSION:In this study,an artificial intelligence retinal vessel segmentation system is used with 99%accuracy,thus providing with relatively satisfactory performance in the evaluation of quantitative vascular morphology.DR patients have a tendency of vascular occlusion and dropout.The presence of DME does not compromise the integral retinal vascular pattern.

Isolation Enhancement in a Compact Four-Element MIMO Antenna for Ultra-Wideband Applications

Mutual coupling reduction or isolation enhancement in antenna arrays is an important area of research as it severely affects the performance of an antenna.In this paper,a new type of compact and highly isolated Multiple-Input-Multiple-Output(MIMO)antenna for ultra-wideband(UWB)applications is presented.The design consists of four radiators that are orthogonally positioned and confined to a compact 40×40×0.8 mm3 space.The final antenna design uses an inverted L shape partial ground to produce an acceptable reflection coefficient(S11<−10 dB)in an entire UWB band(3.1–10.6)giga hertz(GHz).Moreover,the inter-element isolation has also been enhanced to>20 db for majority of the UWB band.The antenna was fabricated and tested with the vector network analyzer(VNA)and in an anechoic chamber for scattering parameters and radiation patterns.Furthermore,different MIMO diversity performance metrics are also measured to validate the proposed model.The simulation results and the experimental results from the constructed model agree quite well.The proposed antenna is compared with similar designs in recently published literature for various performance metrics.Because of its low envelope correlation coefficient(ECC<0.1),high diversity gain(DG>9.99 dB),peak gain of 4.6 dB,reduced channel capacity loss(CCL<0.4 b/s/Hz),and average radiation efficiency of over 85%,the proposed MIMO antenna is ideally suited for practical UWB applications.

ON THE PAR REDUCTION OF MB-OFDM ULTRA-WIDEBAND SIGNALS

The Peak to Average power Ratio (PAR) of a Multi-Band Orthogonal Frequency-Division Multiplexing (MB-OFDM) Ultra-Wide Band (UWB) signals can be substantially larger than that of single carrier or carrier-less ultra-wideband signals. In this letter, a novel PAR reduction scheme for the MB-OFDM UWB system based on spreading and interleaving is proposed. By spreading the coded bits over each subcarrier in corresponding band and interleaving the spread symbols across all bands, the PAR statistics of the MB-OFDM signals can be improved and the PAR is reduced obviously. In the PAR reduction scheme, there is no loss in transmission data rate or Bit Error Rate (BER) performance decreasing. Since the spreading and interleaving operation are implemented by unitary Hadamard sequences and used for an approach to provide the robustness of the UWB system to narrowband interference, there is no additional implementation burden. Simulation results show that the investigated scheme gives the PAR reduction of 3dB compared with that of the original MB-OFDM signals.

A Novel Ultra-Wideband Monopole Antenna with Band-Stop Characteristic

In this letter, a simple monopole antenna with variable band-notched characteristic for ultra wide band (UWB) function is proposed. Two L-shaped quarter-waveguide resonators coupled to the ground plane with two shorting tracks at the sides of the antenna are used to generate stop-band performance around 5.5 GHz (WLAN). The proposed antenna is fabricated on the substrate FR4 (relative permittivity of 4.7) and has a compact size of 16 × 28.5 × 1.6 mm. The designed antenna has a good impedance matching in 3.1 - 11.4 GHz frequency range with VSWR < 2, except the band 5 - 5.85 GHz.

Mobile Robot Positioning and Tracking Based on Ultra-wideband Technology

To solve the precision self-positioning problem for mobile robot,a positioning program based on ultra-wideband technology was proposed. Ultra-wideband pulse has very high bandwidth; ranging accuracy can achieve centimeter-level theoretically. The mobile robot obtained the distance to the reference node by sending ultra-wideband pulse. According to the geometric relations among the references and the robot,establish equations to calculate the position coordinates. Then Kalman filter algorithm was applied for mobile robot tracking. Simulation results show that robot positioning and tracking based on ultra-wideband technology can achieve indoor and outdoor seamless docking.

Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.

Failure transition of shear-to-dilation band of rock salt under triaxial stresses

Great potential of underground gas/energy storage in salt caverns seems to be a promising solution to support renewable energy.In the underground storage method,the operating cycle unfortunately may reach up to daily or even hourly,which generates complicated pressures on the salt cavern.Furthermore,the mechanical behavior of rock salt may change and present distinct failure characteristics under different stress states,which affects the performance of salt cavern during the time period of full service.To reproduce a similar loading condition on the cavern surrounding rock mass,the cyclic triaxial loading/unloading tests are performed on the rock salt to explore the mechanical transition behavior and failure characteristics under different confinement.Experimental results show that the rock salt samples pre-sent a diffused shear failure band with significant bulges at certain locations in low confining pressure conditions(e.g.5 MPa,10 MPa and 15 MPa),which is closely related to crystal misorientation and grain boundary sliding.Under the elevated confinement(e.g.20 MPa,30 MPa and 40 MPa),the dilation band dominates the failure mechanism,where the large-size halite crystals are crushed to be smaller size and new pores are developing.The failure transition mechanism revealed in the paper provides additional insight into the mechanical performance of salt caverns influenced by complicated stress states.

Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells

Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.

Layered kagome compound Na_(2)Ni_(3)S_(4)with topological flat band

We report structural and electronic properties of Na_(2)Ni_(3)S_(4),a quasi-two-dimensional compound composed of alternating layers of[Ni_(3)S_(4)]^(2-)and Na^(+).The compound features a remarkable Ni-based kagome lattice with a square planar configuration of four surrounding S atoms for each Ni atom.Magnetization and electrical measurements reveal a weak paramagnetic insulator with a gap of about 0.5 eV.Our band structure calculation highlights a set of topological flat bands of the kagome lattice derived from the rotated dxz-orbital with C_(3)+T symmetry in the presence of crystal-field splitting.

Negative Lumped Element Matching Technique for Performance Enhancement of Ultra-Wideband LNA

The paper aims at designing of two stage cascaded ultra-wideband(UWB) low noise amplifier(LNA) by using negative image amplifier technique. The objective of this article is to show the performance improvement using negative image amplifier technique and realization of negative valued lumped elements into microstrip line geometry. The innovative technique to realize the negative lumped elements are carried out by using Richard's Transformation and transmission line calculation. The AWR microwave office tool is used to obtain characteristics of UWB LNA design with hybrid microwave integrated circuit(HMIC) technology. The 2-stage cascaded LNA design using negative image amplifier technique achieves average gain of 23 dB gain and low noise Figure of less than 2 dB with return loss less than-8 dB for UWB 3-10 GHz. The Proper bias circuit is extracted using DC characteristics of transistor at biasing point 2 V, 20 mA and discussed in detail with LNA layout. The negative image matching technique is applied for both input and output matching network. This work will be useful for all low power UWB wireless receiver applications.