Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer

AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.

Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer

We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs.

Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.

Pterygium associated with light-emitting diode use:a case report

Background:Pterygium is a sun-related ocular surface disease secondary to ultraviolet(UV)radiation exposure.Outdoor occupational UV exposure is known to occur secondary to sun exposure.We present a unique case of pterygium associated with indoor occupational light-emitting diode(LED)exposure not previously described in the literature.Case Description:A mobile phone repairer presented with blurred vision and a superotemporal pterygium of his dominant left eye associated with a magnifying glass LED work lamp was diagnosed.This was excised routinely with conjunctival autografting to the defect.Histopathology confirmed benign pterygium and recovery was uncomplicated with resolution of blur.Conclusions:The development of pterygium in our patient may have arisen due to the LED lamp’s wavelengths possibly falling within the UV as well as the upper end of the visible light radiation spectrum.Given the increasing reliance on LED light sources in modern life,ocular conditions arising from exposure to these radiation sources may now need to be listed in the differential diagnoses of patients with pterygium.Appropriate UV protection counselling for these types of lights may also now need to be considered.

UV-LED表面消毒辐射场的数学模拟体系的建立及试验验证

为了实现紫外发光二极管(Ultraviolet Light-Emitting Diodes,UV-LED)表面消毒器设计的优化、高效、智能化目的,研究建立了UV-LED表面消毒辐射场的数学模型,并进行了试验验证。根据该数学模型,编写了VBA(Visual Basic for Applications)程序,对辐射场进行了模拟和分析。结果显示,辐射模型的计算值与实测值接近,试验验证了辐射模型的可行性。试验进行了应用举例,当照射距离与灯间距的比值为0.4时,选择最大发光角90°的UV-LED可使辐射场最优化;当照射距离与灯间距的比值为0.8和1.6时,对应的最优选择分别是45°和30°的UV-LED。数学模型和相关计算方法为优化设计紫外线表面消毒设施提供了模拟、优化的有效工具。

紫外发光二极管(UV-LED)技术对食品微生物灭活应用的研究进展

紫外辐照是一种非热杀菌技术,汞蒸气紫外灯是现阶段用于食品卫生处理的主要设备,但受某些因素影响,汞灯的生产使用将逐渐变少,被环保节能的紫外发光二极管(UV-LED)取代是一种不可避免的趋势。本文根据UV-LED发光原理和多波长耦合应用的特点,综述了对微生物灭活的机理、探究了影响灭活效果的因素(波长、紫外剂量和物料特性)、处理食品的灭菌效果以及对部分食品品质的影响,为UV-LED在食品领域的杀菌处理工艺和设备参数优化提供参考。

Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array

The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet light-emitting diodes(DUV LEDs). In this paper, we first report the electrically injected 274-nm AlGaN nanorod array DUV LEDs fabricated by the nanosphere lithography and dry-etching technique. Nanorod DUV LED devices with good electrical properties are successfully realized. Compared to planar DUV LEDs, nanorod DUV LEDs present>2.5 times improvement in light output power and external quantum efficiency. The internal quantum efficiency of nanorod LEDs increases by 1.2 times due to the transformation of carriers from the exciton to the free electron–hole, possibly driven by the interface state effect of the nanorod sidewall surface. In addition, the nanorod array significantly facilitates photons escaping from the interior of LEDs along the vertical direction, contributing to improved light extraction efficiency. A three-dimensional finite-different time-domain simulation is performed to analyze further in detail the TE-and TM-polarized photon extraction mechanisms of the nanostructure. Our results demonstrate the nanorod structure is a good candidate for high-efficiency DUV emitters.

Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

While the demand for deep ultraviolet(DUV)light sources is rapidly growing,the efficiency of current AlGaN-based DUV light-emitting diodes(LEDs)remains very low due to their fundamentally limited light-extraction efficiency(LEE),calling for a novel LEE-enhancing approach to deliver a real breakthrough.Here,we propose sidewall emission-enhanced(SEE)DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes.The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors.The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs.Accordingly,the proposed approach simultaneously improves optical and electrical properties.In addition,strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.

Dy^(3+)-doped LiYF_4 crystals for UV-excited white light-emitting diodes

A Dy3＋-doped LiYF4 single crystal capable of generating white light by simultaneous blue and yellow light emission of phosphorescent centers is produced. Chromaticity coordinates and photoluminescence intensity vary with excitation wavelength. Under 350, 365, and 388 nm excitation, the crystal shows excellent white light emission. The most efficient wavelength for white light is 388 nm. The CIE coordina.tes are x=0.316 and y =0.321, and the color temperature （Tc） is 6 368 K. These results indicate that the studied crystal is a potential candidate for ultraviolet light-excited white light-emitting diodes.

Prognostics of radiation power degradation lifetime for ultraviolet light-emitting diodes using stochastic data-driven models

With their advantages of high efficiency,long lifetime,compact size and being free of mercury,ultraviolet light-emitting diodes(UV LEDs)are widely applied in disinfection and purification,photolithography,curing and biomedical devices.However,it is challenging to assess the reliability of UV LEDs based on the traditional life test or even the accelerated life test.In this paper,radiation power degradation modeling is proposed to estimate the lifetime of UV LEDs under both constant stress and step stress degradation tests.Stochastic data-driven predic-tions with both Gamma process and Wiener process methods are implemented,and the degradation mechanisms occurring under different aging conditions are also analyzed.The results show that,compared to least squares regression in the IESNA TM-21 industry standard recommended by the Illuminating Engineering Society of North America(IESNA),the proposed stochastic data-driven methods can predict the lifetime with high accuracy and narrow confidence intervals,which confirms that they provide more reliable information than the IESNA TM-21 standard with greater robustness.

UV-LED紫外光固化技术在家具与木制品表面装饰中的应用

UV-LED(ultraviolet light‑emitting diodes)紫外光固化是一种新兴的、环保的固化技术,是利用UV-LED灯发出的紫外光引发UV树脂的瞬间光化学反应,在物体表面形成具有网状化学结构的涂层。UV-LED紫外光固化技术具有高效、节能、环保、经济、适应性广等特点。目前UV-LED灯正在逐渐取代传统UV汞灯,并已成为众多UV涂料、UV油墨等树脂紫外光固化的选择方向。主要总结和概述了紫外光(UV)固化的原理、紫外光(UV)光源及设备、UV-LED紫外光固化技术的应用等,以期为UV-LED紫外光固化技术在家具与木制品表面装饰中得到推广应用提供借鉴和参考。

液相色谱法测定化妆品中紫外光吸收剂UV-360的含量

优化高效色谱法测定防晒化妆品中紫外光吸收剂UV-360含量的方法。采用甲醇对化妆品进行萃取后进行分析测定,C18色谱柱(250mm×4.6 mm,5μm)、二极管阵列检测器(1.00m L/min)、检测波长为280nm,流动相为90%异丙醇。结果表明,紫外光吸收剂UV-360在0.001mg/L至0.012mg/L的浓度范围呈良好的线性关系,检出限为0.00106mg/L,回收率在100.8%,相对标准偏差(RSD)3.0%。该方法准确、可靠,可用于防晒化妆品中紫外光吸收剂UV-360的检测。

紫外光通信系统现状及发展趋势分析

紫外光通信系统作为一种新型的军事通信系统,具有抗干扰能力强、保密性好、非视距通信以及全方位通信等优点。它可作为一种专用局域军事保密通信手段,或在特定条件下作为其它通信手段的一种补充,可广泛应用于海陆空三军,对未来战争、现代化国防具有特殊的使用价值和实际意义。文中主要介绍了国内外紫外光通信系统的发展现状,并分析了其未来发展趋势。

发光二极管用荧光材料Sr_2CeO_4：Sm^(3+)的合成及其发光特性

以具有一维结构的Sr_2CeO_4化合物为研究对象、Sm^(3+)作为发光中心,探索了其作为LED用荧光材料的可能性.用高温固相法于1200℃、6h合成了Sr_2CeO_4:Sm^(3+)系列单相粉末样品,并研究了其发光性质.结果表明,在365nm激发下,从荧光光谱中可以看出存在从基质向稀土离子的能量转移.通过调节荧光材料Sr_2CeO_4:Sm^(3+)中稀土离子Sm^(3+)的掺杂浓度,可以调谐发光体的发光颜色,当Sm^(3+)离子浓度较小(<3%)时,体系发出很强的白光;当Sm^(3+)离子浓度较大(3%～15%)时,体系发出红光.测量了荧光材料的色坐标,发现Sr_2CeO_4:1%Sm^(3+)的色坐标是(0.334,0.320),接近于纯白色(0.33,0.33),可以作为一种新型的UV-LED用单一白色荧光材料.

使用溅射AlN成核层实现大规模生产深紫外LED

高质量AlN薄膜对制造高性能深紫外器件非常重要,但是目前还很难使用大型工业MOCVD生长出高质量的AlN薄膜。采用磁控溅射制备了不同厚度的用作成核层的AlN薄膜,使用大型工业MOCVD直接在成核层上高温生长AlN外延层,研究了不同成核层对AlN外延层质量的影响。通过扫描电子显微镜和原子力显微镜对成核层AlN薄膜的表面形貌进行表征;使用高分辨X射线衍射仪对AlN外延层晶体质量进行表征,结果表明:在溅射成核层上生长的AlN外延层的晶体质量有显著提高。使用大型工业MOCVD在蓝宝石衬底上成功制备出中心波长为282 nm的可商用深紫外LED,在注入电流为20 m A时,单颗深紫外LED芯片的光输出功率达到了1.65 m W,对应的外量子效率为1.87%,饱和光输出功率达到4.31 mW。

紫外光通信技术发展及应用研究

紫外光通信系统作为一种新型的军事通信系统,具有抗干扰能力强、保密性好、非视距通信以及全方位通信等优点。不易被探测和截收,适用于多种近距离抗干扰通信环境,可满足单兵、军舰、飞机编队之间的保密通讯需要。文中研究总结了国内外紫外光通信的最新进展,并阐述了紫外光通信在海、陆、空三军中可能的应用模式,并揭示了紫外光通信技术对未来战争、现代化国防具有重要的军事价值。

紫外线消毒技术的研究现状及发展趋势

在COVID-19流行期,为考察新型紫外线消毒技术研究及其应用状况,对紫外发光二极管和222nm远紫外消毒技术两类新型紫外消毒技术进行了探讨。详细介绍了UV-LED的单波长照射,脉冲紫外照射和多波长协同照射三种消毒方案的研究进展、应用场所并对其潜力进行了探讨;重点介绍了222nm远紫外消毒技术,对其应用和未来发展做出了展望;讨论了UV-LED现阶段遇到的问题并对紫外消毒市场发展做出了展望,预计未来紫外消毒市场中将形成汞灯为主,LED为辅,两者相互补充的格局。

一种NiO薄膜的新型制备方法及其应用

利用热氧化法,在紫外线光源催化作用下,在N型硅衬底上沉积氧化镍(NiO)薄膜,制备具有半导体特性的NiO/Si异质结二极管。使用JASCO NRS-3100测量薄膜拉曼散射频谱,分析不同氧化时间、不同紫外线光源、不同退火条件对NiO薄膜性能的影响。实验结果表明:氧化时间为60 min时,金属Ni能够充分氧化;含臭氧水银灯比金属卤化物灯更有助于金属Ni的氧化反应;氮气下退火30 min,有助于消除晶格损伤,改善薄膜特性。通过Phillips X'Pert衍射仪分析NiO薄膜的晶体结构,Keysight B1500A半导体参数测量仪测量NiO/Si二极管的I-V特性,当二极管两端电压分别为2 V和-2 V时,电流密度相差3个数量级,表现出良好的整流特性。