4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high qu...4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.展开更多
为研究复合电压下阀内部屏蔽罩电极的起晕电压特性,搭建了用稍不均匀电场电极缩尺模拟阀用屏蔽罩电极,并搭建了复合电压电极电晕放电平台,基于紫外成像技术研究了稍不均匀场中阀用屏蔽罩电极缩尺模型的紫外光子数特性及起晕电压特性,并...为研究复合电压下阀内部屏蔽罩电极的起晕电压特性,搭建了用稍不均匀电场电极缩尺模拟阀用屏蔽罩电极,并搭建了复合电压电极电晕放电平台,基于紫外成像技术研究了稍不均匀场中阀用屏蔽罩电极缩尺模型的紫外光子数特性及起晕电压特性,并获得了不同电极尺寸下的起晕电压的变化规律。在此基础上,利用有限元方法对不同交直流配比下,电晕起始电场强度分布进行了仿真。通过分析可以得到:气隙间距在0~10 cm范围内,在固定直流改变交流的复合升压方式下,随着正直流分量的增加,电极所加交流分量会逐渐降低,若认为起晕时交直流分量直接线性叠加得到的电压为起晕电压,则起晕电压值会随正直流分量的增加呈现先增加后降低的趋势,存在一组交流和直流电压配比,使得复合电压作用下电极的起晕电压达到峰值,数值可达65 k V左右。该研究可以为换流阀内电极结构的绝缘优化设计提供参考。展开更多
基金supported in part by National Key R&D Program of China under Grant No. 2016YFB0400902in part by the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘4H-SiC single photon counting avalanche photodiodes(SPADs)are prior devices for weak ultraviolet(UV)signal detection with the advantages of small size,low leakage current,high avalanche multiplication gain,and high quantum efficiency,which benefit from the large bandgap energy,high carrier drift velocity and excellent physical stability of 4 H-SiC semiconductor material.UV detectors are widely used in many key applications,such as missile plume detection,corona discharge,UV astronomy,and biological and chemical agent detection.In this paper,we will describe basic concepts and review recent results on device design,process development,and basic characterizations of 4 H-SiC avalanche photodiodes.Several promising device structures and uniformity of avalanche multiplication are discussed,which are important for achieving high performance of 4 HSiC UV SPADs.
文摘为研究复合电压下阀内部屏蔽罩电极的起晕电压特性,搭建了用稍不均匀电场电极缩尺模拟阀用屏蔽罩电极,并搭建了复合电压电极电晕放电平台,基于紫外成像技术研究了稍不均匀场中阀用屏蔽罩电极缩尺模型的紫外光子数特性及起晕电压特性,并获得了不同电极尺寸下的起晕电压的变化规律。在此基础上,利用有限元方法对不同交直流配比下,电晕起始电场强度分布进行了仿真。通过分析可以得到:气隙间距在0~10 cm范围内,在固定直流改变交流的复合升压方式下,随着正直流分量的增加,电极所加交流分量会逐渐降低,若认为起晕时交直流分量直接线性叠加得到的电压为起晕电压,则起晕电压值会随正直流分量的增加呈现先增加后降低的趋势,存在一组交流和直流电压配比,使得复合电压作用下电极的起晕电压达到峰值,数值可达65 k V左右。该研究可以为换流阀内电极结构的绝缘优化设计提供参考。
