期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
Surface plasmon-enhanced dual-band infrared absorber for VO_x-based microbolometer application 被引量:3
1
作者 李琦 于兵强 +3 位作者 李兆峰 王晓峰 张紫辰 潘岭峰 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第8期265-270,共6页
We propose a periodic structure as an extra absorption layer(i.e., absorber) based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared(MWIR) and long wavelength ... We propose a periodic structure as an extra absorption layer(i.e., absorber) based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared(MWIR) and long wavelength infrared(LWIR)regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO_2/SiN sandwich-structure.We employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μm and λ = 9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved. 展开更多
关键词 surface plasmon resonance effects dual-band absorption vanadium oxide uncooled infrared detector
下载PDF
CVD preparation of vertical graphene nanowalls/VO_(2)(B)composite films with superior thermal sensitivity in uncooled infrared detector
2
作者 Ya Lu Han Zhang Dongyun Wan 《Journal of Materiomics》 SCIE EI 2020年第2期280-285,共6页
Vanadium dioxide with superior thermal sensitivity is one of the most preferred materials used in microbolometer,and the B phase of VO_(2) is particularly prominent.However,conventional VO_(2)(B)undergoes low temperat... Vanadium dioxide with superior thermal sensitivity is one of the most preferred materials used in microbolometer,and the B phase of VO_(2) is particularly prominent.However,conventional VO_(2)(B)undergoes low temperature-coefficient of resistance(TCR)values and large resistances.In this paper,simple controllable composite films of vertical graphene nanowalls/VO_(2)(B)(i.e.,VGNWs/VO_(2)(B))with a suitable square resistance(12.98 kU)and a better temperature-coefficient of resistance(TCR)(-3.2%/K)were prepared via low pressure chemical vapor deposition.The VGNWs can provide a fast channel for electron transport and enhance the conductivity of VO_(2)(B).This preparation method can provide a low cost,facile and simple pathway for the design and fabrication of high performance VO_(2)(B)thin films with superior electrical properties for its application in uncooled infrared detectors. 展开更多
关键词 Vertical graphene nanowalls VO_(2)(B)films Chemical vapor deposition uncooled infrared detectors
原文传递
A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process
3
作者 申宁 唐祯安 +1 位作者 余隽 黄正兴 《Journal of Semiconductors》 EI CAS CSCD 2014年第3期97-101,共5页
This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the... This paper introduces a low-cost infrared absorbing structure for an uncooled infrared detector in a standard 0.5 m CMOS technology and post-CMOS process. The infrared absorbing structure can be created by etching the surface sacrificial layer after the CMOS fabrication, without any additional lithography and deposition procedures. An uncooled infrared microbolometer is fabricated with the proposed infrared absorbing structure.The microbolometer has a size of 6565 m2and a fill factor of 37.8%. The thermal conductance of the microbolometer is calculated as 1.3310 5W/K from the measured response to different heating currents. The fabricated microbolometer is irradiated by an infrared laser, which is modulated by a mechanical chopper in a frequency range of 10–800 Hz. Measurements show that the thermal time constant is 0.995 ms and the thermal mass is 1.3210 8J/K. The responsivity of the microbolometer is about 3.03104V/W at 10 Hz and the calculated detectivity is 1.4108cm Hz1=2/W. 展开更多
关键词 infrared absorbing structure CMOS infrared detectors microbolometer low-cost infrared detectors uncooled infrared detectors
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部