Strength regularity and failure criterion of plain HSHPC under biaxial compression after exposure to high temperatures

Biaxial compression tests are performed on 100 mm × 100 mm × 100 mm cubic specimens of plain high-strength highperformance concrete （HSHPC） at seven kinds of stress ratios, σ2：σ3 =0 ： - 1, -0.20 ： - 1, -0.30 ： - 1, -0.40 ： - 1, -0.50 ： -1, -0. 75 ： - 1, and - 1.00 ： - 1 after exposure to normal and high temperatures of 20, 200, 300, 400, 500 and 600 ℃, using a large static-dynamic true triaxial machine. Frictionreducing pads are three layers of plastic membranes with glycerine in-between for the compressive loading plane. Failure modes of the specimens are described. The two principally static compressive strengths are measured. The influences of the temperatures and stress ratios on the biaxial strengths of HSHPC after exposure to high temperatures are also analyzed. The experimental results show that the uniaxial compressive strength of plain HSHPC after exposure to high temperatures does not decrease completely with the increase in temperature; the ratios of the biaxial to its uniaxial compressive strengths depend on the stress ratios and brittleness-stiffness of HSHPC after exposure to different high temperatures. The formula of the Kupfer-Gerstle failure criterion modified with the temperature and stress ratio parameters for plain HSHPC is proposed.

Retarded thermal oxidation of strained Si substrate

Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates （uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive） show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.