INVESTIGATION ON THE DENSITY UNIFORMITY OF PRESSED PARTS BY LOW-VOLTAGE ELECTROMAGNETIC COMPACTION

Powder metallurgy is an efficient approach to fabricate varieties of high performance structure materials, function materials and special materials working under limited conditions. Research and development of new efficient technology to form high-density, high-performance and net shape parts is a key to widen application and development of powder materials. Recently, the low-voltage electromagnetic compaction (EMC) has been used by present authors to compacted copper, tin, aluminum powders and the products with 99% relative density have been acquired. In this work, the research has been extended to investigation on the density uniformity of pressed parts. The analysis results show that the density of the part compacted by low-voltage EMC decreases gradually in press direction as static compaction. But it is higher and more homogeneous. The density of the top part increases gradually from the center to the outer, which is just reversal of the bottom part. In some extent, the higher the discharging voltage is, the higher the density is and the more homogeneous the distribution is. In addition, repetitive compaction can improve the density of powder parts and the distribution uniformity.

Improving the uniformity of RF-plasma density by a humped variable-gap spiral antenna

This paper develops a humped spiral antenna of top inductively coupled plasma with variable gap. Comparing with planar spiral antennae, it investigates the performance of humped spiral antennae in the calculated electromagnetic configurations and experimental results. It finds that the humped antenna has the improved uniformity of plasma density in the radial direction and the decreased electron temperature in the top inductively coupled plasma. By experimental and theoretical analyses, the plasma performance in the case of humped antennae is considered to be the combined results of the uniform electromagnetic configurations and the depressed capacitively coupling effect.

Strong Consistency of the Spline-Estimation of Probabilities Density in Uniform Metric

In the present paper as estimation of an unknown probability density of the spline-estimation is constructed, necessity and sufficiency conditions of strong consistency of the spline-estimation are given.

Correlation ofⅢ/Ⅴsemiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance

Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclotron resonance（ECR） were investigated and compared with the radial uniformity of the etch rate. The determination of the electronic properties of chlorine-and hydrogen-containing plasmas enabled the understanding of the pressure-dependent behavior of the plasma density and provided better insights into the electronic parameters of reactive etch gases. From the electrical evaluation of I（V） characteristics obtained using a Langmuir probe,plasmas of different compositions were investigated. The standard method of Druyvesteyn to derive the electron energy distribution functions by the second derivative of the I（V）characteristics was replaced by a mathematical model which has been evolved to be more robust against noise, mainly, because the first derivative of the I（V） characteristics is used. Special attention was given to the power of the energy dependence in the exponent. In particular, for plasmas that are generated by ECR with EM modes, the existence of Maxwellian distribution functions is not to be taken as a self-evident fact, but the bi-Maxwellian distribution was proven for Ar-and Kr-stabilized plasmas. In addition to the electron temperature, the global uniform discharge model has been shown to be useful for calculating the neutral gas temperature. To what extent the invasive method of using a Langmuir probe could be replaced with the noninvasive optical method of emission spectroscopy, particularly actinometry, was investigated,and the resulting data exhibited the same relative behavior as the Langmuir data. The correlation with etchrate data reveals the large chemical part of the removal process—most striking when the data is compared with etching in pure argon. Although the relative amount of the radial variation of plasma density and etch rate is approximately ？5%, the etch rate shows a slightly concave shape in contrast to the plasma density.

Optimization of Mo/Cu(In,Ga)Se2/CdS/ZnO Hetero-Junction Solar Cell Performance by Numerical Simulation with SCAPS-1D

The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.