The random step maneuver with uniformly distributed starting times has the disadvantage that it cannot focus the starting time on the more efficiency time. It decreases the penetration probability. To resolve this pro...The random step maneuver with uniformly distributed starting times has the disadvantage that it cannot focus the starting time on the more efficiency time. It decreases the penetration probability. To resolve this problem, a random step penetration algorithm with normal distribution starting time is proposed. Using the shaping filters and adjoint system method, the miss distance with different starting times can be acquired. According to the penetration standard, the time window ensuring successful penetration can be calculated and it is used as the 3σ bound of the normally distributed random maneuver. Simulation results indicate that the normally distributed random maneuver has higher penetration probability than the uniformly distributed random maneuver.展开更多
采用行星热壁式SiC外延炉对100 mm 4°偏轴4H-SiC衬底外延工艺进行了研究。分析了氢气预刻蚀工艺对4°偏轴衬底外延材料表面形貌的影响。采用双指标正交实验,通过极差分析的方法研究了C/Si比、Cl/Si比、主氢流量、生长温度、三...采用行星热壁式SiC外延炉对100 mm 4°偏轴4H-SiC衬底外延工艺进行了研究。分析了氢气预刻蚀工艺对4°偏轴衬底外延材料表面形貌的影响。采用双指标正交实验,通过极差分析的方法研究了C/Si比、Cl/Si比、主氢流量、生长温度、三路气体比等工艺参数对SiC外延厚度和掺杂浓度均匀性指标影响的主次顺序,并给出了优化的外延参数。采用该工艺条件制得的无台阶聚集形貌的SiC外延片片内厚度均匀性和浓度均匀性分别是1.23%和3.32%。展开更多
文摘The random step maneuver with uniformly distributed starting times has the disadvantage that it cannot focus the starting time on the more efficiency time. It decreases the penetration probability. To resolve this problem, a random step penetration algorithm with normal distribution starting time is proposed. Using the shaping filters and adjoint system method, the miss distance with different starting times can be acquired. According to the penetration standard, the time window ensuring successful penetration can be calculated and it is used as the 3σ bound of the normally distributed random maneuver. Simulation results indicate that the normally distributed random maneuver has higher penetration probability than the uniformly distributed random maneuver.
文摘采用行星热壁式SiC外延炉对100 mm 4°偏轴4H-SiC衬底外延工艺进行了研究。分析了氢气预刻蚀工艺对4°偏轴衬底外延材料表面形貌的影响。采用双指标正交实验,通过极差分析的方法研究了C/Si比、Cl/Si比、主氢流量、生长温度、三路气体比等工艺参数对SiC外延厚度和掺杂浓度均匀性指标影响的主次顺序,并给出了优化的外延参数。采用该工艺条件制得的无台阶聚集形貌的SiC外延片片内厚度均匀性和浓度均匀性分别是1.23%和3.32%。
