Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation

Close-space sublimation(CSS)has been demonstrated as an alternative vacuum deposition technique for fabricating organic light-emitting diodes(OLEDs).CSS utilizes a planar donor plate pre-coated with organic thin films as an area source to rapidly transfer the donor film to a device substrate at temperatures below 200℃.CSS is also conformal and capable of depositing on odd-shaped substrates using flexible donor media.The evaporation behaviors of organic donor films under CSS were fully characterized using model OLED materials and CSS-deposited films exhibited comparable device performances in an OLED stack to films deposited by conventional point sources.The low temperature and conformal nature of CSS,along with its high material utilization and short process time,make it a promising method for fabricating flexible OLED displays.

Structure of Cu-Phthalocyanine Vacuum Deposited on Inclined Glass Substrates

Cu-phthalocyanine is widely studied as a hole-transport layer in organic electronic devices. Since Cu-phthalocyanine is a molecular solid, the crystal structure depends on a circumstance to a great extent. Vacuum deposited layers were known to consist of two consecutive layers. In this article, Cu-phthalocyanine was deposited on the glass substrate inclined at several angles. The thickness of the first layer was found to be dependent on the substrate angle.

High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc

ZrN/TiZrN multilayers are deposited by using the cathodic vacuum arc method with different substrate bias（from 0 to 800 V）,using Ti and Zr plasma flows in residual N 2 atmosphere,combined with ion bombardment of sample surfaces.The effect of pulsed bias on the structure and properties of films is investigated.Microstructure of the coating is analyzed by X-ray diffraction（XRD）,and scanning electron microscopy（SEM）.In addition,nanohardness,Young＇s modulus,and scratch tests are performed.The experimental results show that the films exhibit a nanoscale multilayer structure consisting of TiZrN and ZrN phases.Solid solutions are formed for component TiZrN films.The dominant preferred orientation of TiZrN films is（111） and（220）.At a pulsed bias of 200 V,the nanohardness and the adhesion strength of the ZrN/TiZrN multilayer reach a maximum of 38 GPa,and 78 N,respectively.The ZrN/TiZrN multilayer demonstrates an enhanced nanohardness compared with binary TiN and ZrN films deposited under equivalent conditions.

Key parameters of two typical intercalation reactions to prepare hybrid inorganic-organic perovskite films

A star hybrid inorganic-organic perovskite material selected as an outstanding absorbing layer in solar cells benefits from multiple preparation techniques and excellent photoelectric characteristics. Among numerous synthetic processes, uniform, compact, and multi-stack perovskite thin films can be manufactured using vacuum deposition. During sequential vacuum deposition, the penetration ability of the organic molecules cannot be effectively controlled. In addition, the rela- tionship between the thickness of the inorganic seeding layer and the organic molecule concentration for optimized devices using an evaporation-solution method is unclear. In this work, we prepared high-quality perovskite films by effectively con- trolling the penetration ability and chemical quantity of organic methyl ammonium iodide by monitoring the evaporation pressure and time. Thus, a device efficiency of over 15% was achieved with an all-vacuum prepared perovskite film. For the evaporation-solution method, we reacted different thicknesses of inorganic lead iodine with various concentrations of the organic molecule solution. The inorganic layer thickness and organic molecule concentration showed a linear relationship to achieve an optimum perovskite film, and an empirical formula was obtained. This work noted the key parameters of two intercalation reactions to prepare perovskite films, which paves a way to deliver a device that enables multi-layered structures, such as tandem solar cells.

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.

Comparison of Vacuum Metal Deposition and 1,2-lndandione/Ninhydrin Reagent Method for the Development of Fingerprints on Renminbi

It is extremely difficult to develop fingerprints from the surface of currency.There are studies reporting that the high vacuum metal deposition(VMD)method can be used to detect fingerprints on certain types of currency notes.Both VMD and 1,2-indandione/ninhydrin techniques are employed to visualize latent fingermarks on porous surfaces,such as paper.The current study explores whether the VMD method or 1,2-indandione/ninhydrin reagent method is more effective in the development of fingerprints on remninbi(RMB).Uncirculated,circulated,and water-exposed RMB was utilized in this study,along with five donors who ranged in their age and potential to leave fingermarks.Samples were aged for a determined period(for uncirculated and circulated RMB,times were 1,3,5,10,and 35 days;for watei^exposed RMB,exposure time was 1 day)and then treated with VMD and 1,2-indandione/ninhydrin.The results suggested that the 1,2-indandione/ninhydrin reagent yielded a better effect for both circulated and uncirculated RMB.For the RMB exposed to water,VMD performed better and gave limited results in terms of fingerprint development,which could serve as a reference for actual forensic cases.

Tribological properties of multilayer tetrahedral amorphous carbon coatings deposited by filtered cathodic vacuum arc deposition

Tetrahedral amorphous carbon(ta‐C)has emerged as an excellent coating material for improving the reliability of application components under high normal loads.Herein,we present the results of our investigations regarding the mechanical and tribological properties of a 2‐μm‐thick multilayer ta‐C coating on high‐speed steel substrates.Multilayers composed of alternating soft and hard layers are fabricated using filtered a cathodic vacuum arc with alternating substrate bias voltages(0 and 100 V or 0 and 150 V).The thickness ratio is discovered to be 1:3 for the sp2‐rich and sp3‐rich layers.The results show that the hardness and elastic modulus of the multilayer ta‐C coatings increase with the sp3 content of the hard layer.The hardness reached approximately 37 GPa,whereas an improved toughness and a higher adhesion strength(>29 N)are obtained.The friction performance(μ=0.07)of the multilayer coating is similar to that of the single layer ta‐C thick coating,but the wear rate(0.13×10^(–6) mm^(3)/(N∙m))improved under a high load of 30 N.We further demonstrate the importance of the multilayer structure in suppressing crack propagation and increasing the resistance to plastic deformation(H3/E2)ratio.

STUDY ON COMPOSITION, MICROSTRUCTURE AND HARDNESS OF DLC FILMS BY VCAD

DLC super-hard films have been deposited on the substrates of single crystalline Si, pure Ti and stainless steel 18-8 by a method of vacuum cathode arc deposition (VCAD). The composition, microstructure and micro-hardness of the films have been studied in this paper. The results indicate that hardness of the DLC films is different on the different substrates. Hardness of the films increases with decreasing in surface roughness of the films. The maximum value of micro-hardness belongs to the DLC films deposited under the hydrogen pressure of 0.35Pa and the negative bias of 100V.

Morphology and Field Emission of ZnO Nanomaterials at Different Positions

By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has the lowest turn-on field, the highest current density, and the highest emission efficiency due to its good contact with the substrate and relatively weak field shielding effect. Experiments show that the morphology and orientation of one-dimensional ZnO nanomaterials have a great influence on its conduction field and emission current density, and the nanoarrays also contribute to electron emission. The research results have a certain reference value for the application of ZnO nanorod arrays as cathode materials for field emission devices.

Analysis,fabrication,and measurement of Y aperture element frequency selective surface

The analysis of Y aperture element frequency selective surface （FSS） using the spectral domain method and the moment method is presented. With the vacuum depositing and photolithography, the corresponding Y aperture element FSS was produced, and it was tested in the microwave darkroom. The calculated and measured results are in good agreement.

Optoelectronic properties and Seebeck coefficient in SnSe thin films

SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10^（-5） mbar.The as-prepared SnSe thin films are characterized for their structural,optical and electrical properties by various experimental techniques.The p-type conductivity,near-optimum direct band gap,high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic applications.The optical constants,loss factor,quality factor and optical conductivity of the films are evaluated.The results of Hall and thermoelectric power measurements are correlated to determine the density of states,Fermi energy and effective mass of carriers and are obtained as 2.8×10^（17）cm^（-3）,0.03 eV and 0.05m_0 respectively.The high Seebeck coefficient ≈ 7863 μV/K,reasonably good power factor ≈7.2×10^（-4） W/（m·K^2） and thermoelectric figure of merit ≈1.2 observed at 42 K suggests that,on further work,the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.