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Applications of vacuum vapor deposition for perovskite solar cells:A progress review 被引量:1
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作者 Hang Li Mingzhen Liu +8 位作者 Meicheng Li Hyesung Park Nripan Mathews Yabing Qi Xiaodan Zhang Henk J.Bolink Karl Leo Michael Graetzel Chenyi Yi 《iEnergy》 2022年第4期434-452,共19页
Metal halide perovskite solar cells(PSCs)have made substantial progress in power conversion efficiency(PCE)and stability in the past decade thanks to the advancements in perovskite deposition methodology,charge transp... Metal halide perovskite solar cells(PSCs)have made substantial progress in power conversion efficiency(PCE)and stability in the past decade thanks to the advancements in perovskite deposition methodology,charge transport layer(CTL)optimization,and encapsulation technology.Solution-based methods have been intensively investigated and a 25.7% certified efficiency has been achieved.Vacuum vapor deposition protocols were less studied,but have nevertheless received increasing attention from industry and academia due to the great potential for large-area module fabrication,facile integration with tandem solar cell architectures,and compatibility with industrial manufacturing approaches.In this article,we systematically discuss the applications of several promising vacuum vapor deposition techniques,namely thermal evaporation,chemical vapor deposition(CVD),atomic layer deposition(ALD),magnetron sputtering,pulsed laser deposition(PLD),and electron beam evaporation(e-beam evaporation)in the fabrication of CTLs,perovskite absorbers,encapsulants,and connection layers for monolithic tandem solar cells. 展开更多
关键词 Perovskite solar cells vacuum vapor deposition thermal evaporation stability EFFICIENCY industrial manufacture
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Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc Ion Source
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作者 Junxia GUO Xun CAI Qiulong CHEN Key Lab for High Temperature Materials and Testing, Shanghai Jiao Tong University, Shanghai 200030, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2004年第3期265-268,共4页
AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) b... AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ionsource with an extraction voltage of 40 kV, implantation doses of 3×10^(17)/cm^2 and 5×10^(17)/cm^2, and ion currentdensities of 13, 22 and 32μA/cm^2. The results showed that the near-surface hardness of Co-implanted stainless steelsample was increased by 50% or more, and it increased with increasing ion current density at first and then declined.The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantationreduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasingion current density and then an increase was observed. Within the range of experimental parameters, there existsa critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasingretained dose, going through a minimum and then increased. The critical ion current density in this paper is about22μA/cm^2. 展开更多
关键词 TRIBOLOGY Metal vapor vacuum arc COBALT Implanted stainless steel
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High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System
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作者 Guangli LUO, Xiaofeng LIN, Peiyi CHEN and Peixin TSIAN (Institute of Microelectronics, Tsinghua University, Beijing 100084, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2000年第1期94-96,共3页
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is dep... An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined. 展开更多
关键词 SIGE high High Quality SiGe Layer Deposited by a New Ultrahigh vacuum Chemical Vapor Deposition System
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Morphology and Field Emission of ZnO Nanomaterials at Different Positions
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作者 Junzheng Wang Lijun Wang 《Journal of Applied Mathematics and Physics》 2022年第4期1028-1035,共8页
By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has th... By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has the lowest turn-on field, the highest current density, and the highest emission efficiency due to its good contact with the substrate and relatively weak field shielding effect. Experiments show that the morphology and orientation of one-dimensional ZnO nanomaterials have a great influence on its conduction field and emission current density, and the nanoarrays also contribute to electron emission. The research results have a certain reference value for the application of ZnO nanorod arrays as cathode materials for field emission devices. 展开更多
关键词 Field Emission ZnO Films vacuum Electron Beam Vapor Deposition
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Behavior of Element Vaporization and Composition Control of Fe-Ga Alloy during Vacuum Smelting
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作者 Jian-wu YAN Liang LUO +2 位作者 A-fang PENG Chen-shu ZHANG Qing-hua CAO 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2015年第11期983-989,共7页
Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between... Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between the change of Ga content and melting time was determined. The results demonstrated that saturated vapor pressure of Ga was higher than that of Fe under the same conditions. The difference value of critical evaporation temperature of Ga with and without Ar was nearly 800 K. The critical evaporation temperature of Fe was higher than that of Ga under vacuum, indicating that Ga was more volatile than Fe. At 1800 K, the evaporation rate of Ga was 84 times higher than that of Fe in the melt of Fe81Ga19 alloy. Under this condition, the change of Ga content and smelting time kept a linear relationship. The higher the temperature was, the faster the Ga content decreased, which was consistent with theoretical calculations. 展开更多
关键词 Fe-Ga alloy vacuum smelting critical evaporation temperature saturated vapor pressure smelting time
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Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition 被引量:3
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作者 刘佳磊 梁仁荣 +3 位作者 王敬 徐阳 许军 刘志弘 《Tsinghua Science and Technology》 SCIE EI CAS 2007年第6期747-751,共5页
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UH... The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density. 展开更多
关键词 pure Ge SiGe buffer OXIDATION ultrahigh vacuum chemical vapor deposition
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Effects of water vapor in high vacuum chamber on the properties of HfO_2 films 被引量:2
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作者 凌波 贺洪波 邵建达 《Chinese Optics Letters》 SCIE EI CAS CSCD 2007年第8期487-489,共3页
The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and ... The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and photoelectric maximum control method. An in situ residual gas analyzer (RGA) was used to monitor the residual gas composition in the vacuum chamber. The optical properties, microstructure, absorption and laser-induced damage threshold (LIDT) of the samples were characterized by Lambda 900 spectrophotometer, X-ray diffraction (XRD), surface thermal lensing (STL) technique and 1064-nm Qswitched pulsed laser at a pulse duration of 12 ns respectively. It was found that a cold trap is an effective equipment to suppress water vapor in the vacuum chamber during the pumping process, and the coatings deposited in the vacuum atmosphere with relatively low water vapor composition show higher refractive index and smaller grain size. Meanwhile, the higher LIDT value is corresponding to lower absorbance. 展开更多
关键词 Effects of water vapor in high vacuum chamber on the properties of HfO2 films high
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