Metal halide perovskite solar cells(PSCs)have made substantial progress in power conversion efficiency(PCE)and stability in the past decade thanks to the advancements in perovskite deposition methodology,charge transp...Metal halide perovskite solar cells(PSCs)have made substantial progress in power conversion efficiency(PCE)and stability in the past decade thanks to the advancements in perovskite deposition methodology,charge transport layer(CTL)optimization,and encapsulation technology.Solution-based methods have been intensively investigated and a 25.7% certified efficiency has been achieved.Vacuum vapor deposition protocols were less studied,but have nevertheless received increasing attention from industry and academia due to the great potential for large-area module fabrication,facile integration with tandem solar cell architectures,and compatibility with industrial manufacturing approaches.In this article,we systematically discuss the applications of several promising vacuum vapor deposition techniques,namely thermal evaporation,chemical vapor deposition(CVD),atomic layer deposition(ALD),magnetron sputtering,pulsed laser deposition(PLD),and electron beam evaporation(e-beam evaporation)in the fabrication of CTLs,perovskite absorbers,encapsulants,and connection layers for monolithic tandem solar cells.展开更多
AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) b...AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ionsource with an extraction voltage of 40 kV, implantation doses of 3×10^(17)/cm^2 and 5×10^(17)/cm^2, and ion currentdensities of 13, 22 and 32μA/cm^2. The results showed that the near-surface hardness of Co-implanted stainless steelsample was increased by 50% or more, and it increased with increasing ion current density at first and then declined.The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantationreduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasingion current density and then an increase was observed. Within the range of experimental parameters, there existsa critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasingretained dose, going through a minimum and then increased. The critical ion current density in this paper is about22μA/cm^2.展开更多
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is dep...An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.展开更多
By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has th...By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has the lowest turn-on field, the highest current density, and the highest emission efficiency due to its good contact with the substrate and relatively weak field shielding effect. Experiments show that the morphology and orientation of one-dimensional ZnO nanomaterials have a great influence on its conduction field and emission current density, and the nanoarrays also contribute to electron emission. The research results have a certain reference value for the application of ZnO nanorod arrays as cathode materials for field emission devices.展开更多
Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between...Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between the change of Ga content and melting time was determined. The results demonstrated that saturated vapor pressure of Ga was higher than that of Fe under the same conditions. The difference value of critical evaporation temperature of Ga with and without Ar was nearly 800 K. The critical evaporation temperature of Fe was higher than that of Ga under vacuum, indicating that Ga was more volatile than Fe. At 1800 K, the evaporation rate of Ga was 84 times higher than that of Fe in the melt of Fe81Ga19 alloy. Under this condition, the change of Ga content and smelting time kept a linear relationship. The higher the temperature was, the faster the Ga content decreased, which was consistent with theoretical calculations.展开更多
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UH...The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.展开更多
The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and ...The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and photoelectric maximum control method. An in situ residual gas analyzer (RGA) was used to monitor the residual gas composition in the vacuum chamber. The optical properties, microstructure, absorption and laser-induced damage threshold (LIDT) of the samples were characterized by Lambda 900 spectrophotometer, X-ray diffraction (XRD), surface thermal lensing (STL) technique and 1064-nm Qswitched pulsed laser at a pulse duration of 12 ns respectively. It was found that a cold trap is an effective equipment to suppress water vapor in the vacuum chamber during the pumping process, and the coatings deposited in the vacuum atmosphere with relatively low water vapor composition show higher refractive index and smaller grain size. Meanwhile, the higher LIDT value is corresponding to lower absorbance.展开更多
基金financial support of the National Key Research and Development Program of China(2022YFB3803304)The project supported by Tsinghua University Initiative Scientific Research Program(20221080065,20223080044)+9 种基金National Natural Science Foundation of China(No.21872080)State Key Laboratory of Power System and Generation Equipment(Nos.SKLD21Z03 and SKLD20M03)The Chinese Thousand Talents Program for Young Professionals,State Grid Corporation of China,National Bio Energy Co.,Ltd.Grant Number 52789922000DChina Huaneng Group Co.,Ltd.,and grant no.HNKJ20-H88financial support of the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation programme(Grant agreement No.834431)the Spanish Agencia estatal de investigacion(AEI)Grant PDC2021-121317-I00funded by MCIN/AEI/10.13039/501100011033by the“European Union NextGenerationEU/PRTR”the support from the Energy Materials and Surface Sciences Unit of the Okinawa Institute of Science and Technology Graduate Universitythe support from the National Natural Science Foundation of China(No.52232008).
文摘Metal halide perovskite solar cells(PSCs)have made substantial progress in power conversion efficiency(PCE)and stability in the past decade thanks to the advancements in perovskite deposition methodology,charge transport layer(CTL)optimization,and encapsulation technology.Solution-based methods have been intensively investigated and a 25.7% certified efficiency has been achieved.Vacuum vapor deposition protocols were less studied,but have nevertheless received increasing attention from industry and academia due to the great potential for large-area module fabrication,facile integration with tandem solar cell architectures,and compatibility with industrial manufacturing approaches.In this article,we systematically discuss the applications of several promising vacuum vapor deposition techniques,namely thermal evaporation,chemical vapor deposition(CVD),atomic layer deposition(ALD),magnetron sputtering,pulsed laser deposition(PLD),and electron beam evaporation(e-beam evaporation)in the fabrication of CTLs,perovskite absorbers,encapsulants,and connection layers for monolithic tandem solar cells.
文摘AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steelwas investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ionsource with an extraction voltage of 40 kV, implantation doses of 3×10^(17)/cm^2 and 5×10^(17)/cm^2, and ion currentdensities of 13, 22 and 32μA/cm^2. The results showed that the near-surface hardness of Co-implanted stainless steelsample was increased by 50% or more, and it increased with increasing ion current density at first and then declined.The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantationreduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasingion current density and then an increase was observed. Within the range of experimental parameters, there existsa critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasingretained dose, going through a minimum and then increased. The critical ion current density in this paper is about22μA/cm^2.
文摘An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.
文摘By simply adjusting the temperature and the number of materials, rod-like ZnO with different morphology, such as ZnO nanoneedles, were synthesized by a flexible thermal evaporation method. The ZnO nanorod array has the lowest turn-on field, the highest current density, and the highest emission efficiency due to its good contact with the substrate and relatively weak field shielding effect. Experiments show that the morphology and orientation of one-dimensional ZnO nanomaterials have a great influence on its conduction field and emission current density, and the nanoarrays also contribute to electron emission. The research results have a certain reference value for the application of ZnO nanorod arrays as cathode materials for field emission devices.
基金Item Sponsored by National Natural Science Foundation of China(51161019)Project of Department of Science and Technology of Jiangxi Province of China(20133BBE50011)Project of Department of Science & Technology of Jiangxi Province of China(20141BDH80025)
文摘Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between the change of Ga content and melting time was determined. The results demonstrated that saturated vapor pressure of Ga was higher than that of Fe under the same conditions. The difference value of critical evaporation temperature of Ga with and without Ar was nearly 800 K. The critical evaporation temperature of Fe was higher than that of Ga under vacuum, indicating that Ga was more volatile than Fe. At 1800 K, the evaporation rate of Ga was 84 times higher than that of Fe in the melt of Fe81Ga19 alloy. Under this condition, the change of Ga content and smelting time kept a linear relationship. The higher the temperature was, the faster the Ga content decreased, which was consistent with theoretical calculations.
基金Supported by the National Natural Science Foundation of China (No. 60476017)the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
文摘The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.
文摘The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and photoelectric maximum control method. An in situ residual gas analyzer (RGA) was used to monitor the residual gas composition in the vacuum chamber. The optical properties, microstructure, absorption and laser-induced damage threshold (LIDT) of the samples were characterized by Lambda 900 spectrophotometer, X-ray diffraction (XRD), surface thermal lensing (STL) technique and 1064-nm Qswitched pulsed laser at a pulse duration of 12 ns respectively. It was found that a cold trap is an effective equipment to suppress water vapor in the vacuum chamber during the pumping process, and the coatings deposited in the vacuum atmosphere with relatively low water vapor composition show higher refractive index and smaller grain size. Meanwhile, the higher LIDT value is corresponding to lower absorbance.