This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were chara...This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were characterized with several different techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and Raman, when they were fresh from sputter chamber and aged after years, respectively, in order to determine their structure and composition. It finds that a small amount of sodium occurred on the surface of vanadium dioxide films, which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature. It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films, thus inducing much change in Raman modes.展开更多
Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H2O as the oxide source. The effect of the source temperature on the quality of va...Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H2O as the oxide source. The effect of the source temperature on the quality of vanadium oxide films and valence state was investigated. The crystallinity, surface morphology, film thickness, and photoelectric properties of the films were characterized by x-ray diffraction, atomic force microscope, scanning electron microscope, I–V characteristics curves, and UV–visible spectrophotometer. By varying the source temperature, the content of V6O11, VO2, and V6O13 in the vanadium oxide film increased, that is, as the temperature increased, the average oxidation state generally decreased to a lower value, which is attributed to the rising of the vapor pressure and the change of the ionization degree for organometallics. Meanwhile, the root-mean-square roughness decreased and the metal–insulator transition temperature reduced. Our study is great significance for the fabrication of vanadium oxide films by atomic layer deposition.展开更多
Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic...Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.展开更多
V2Os/TiO2 composite films were prepared on pure titanium substmtes via micro-arc oxidation （MAO） in electrolytes consisting of NaVO3. Their morphology and dements were characterized by scanning electron microscopy ...V2Os/TiO2 composite films were prepared on pure titanium substmtes via micro-arc oxidation （MAO） in electrolytes consisting of NaVO3. Their morphology and dements were characterized by scanning electron microscopy （SEM） and energy-dispersive X-ray （EDX） analysis. Phase composition and valence states of species in the films were characterized by X-ray diffraction （XRD） and X-ray photoelec- tron spectroscopy （XPS）. Ultraviolet-visible diffuse reflectance spectra （UV-Vis DRS） were also employed to evaluate the photophysical property of the films. The VEOs/TiO2 composite films show a sheet-like morphology. Not only V205 phase appears in the films when the NaVO3 concentration of the electrolyte is higher than 6,10 g/L and is loaded at the surface of anatase, but also V4＋ is incorporated into the crystal lattice of anatase. In comparison with pure TiO2 films the V2Os/TiO2 composite films exhibit significantly narrow band gap energy. The film prepared in an electrolyte consisting of NaVO3 with a concentration of 8.54 g/L exhibits the narrowest band gap energy, which is approximately 1.89 eV. The V2Os/TiO2 composite films also have the significantly enhanced visible light photocatalytic activity. The film prepared in an electrolyte consisting of NaVO3 with a concentration of 8.54 g/L exhibits the best photocatalytic activity and about 93% of rhodamine is degraded after 14 h visible light radiation.展开更多
An original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ndoped VOx deposited with changing oxygen flow in the reactive gas mixture. In order to compare with the numer...An original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ndoped VOx deposited with changing oxygen flow in the reactive gas mixture. In order to compare with the numerical model, N-doped VOx films are prepared by reactive magnetron sputtering from a metallic vanadium target immersed in a reactive gas mixture of Ar＋O2＋N2. Both experimental and numerical results show that the addition of N2 to the process alleviates the hysteresis effect with respect to the oxygen supply. Film compositions obtained from the XPS analysis are compared to the numerical results and the agreement is satisfactory. The results also show that the compound of VN is only found at very low O concentration because of the replacement reaction of VN by O2 atoms with higher oxygen flow rate.展开更多
A novel nanopolycrystalline structure of vanadium dioxide thin films is deposited on silicon or fused silica substrates by reactive ion sputtering and followed by an annealing. The characteristic analysis＇shows that ...A novel nanopolycrystalline structure of vanadium dioxide thin films is deposited on silicon or fused silica substrates by reactive ion sputtering and followed by an annealing. The characteristic analysis＇shows that the films have a columnar nanostructure with an average grain of 8 nm. The resistivities as a function of ambient temperatures tested by four-point probes for as-deposited films present that the transition temperature for nanostructure of vanadium dioxide films is near 35 ℃ which lowers about 33 ℃ in comparison with the transition temperature at 68 ℃ in its microstructure.展开更多
Vanadium oxide thin films were prepared on glass substrates by using the spray pyrolysis technique. The effect of solution concentration （0.1 M, 0.2 M and 0.3 M ） on the nanostructural, electrical, optical, and elec...Vanadium oxide thin films were prepared on glass substrates by using the spray pyrolysis technique. The effect of solution concentration （0.1 M, 0.2 M and 0.3 M ） on the nanostructural, electrical, optical, and electrochromic properties of deposited films were investigated using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy, and cyclic volta-metrics. The X-ray diffraction shows that only the sample at 0.1 M has a single fl-V205 phase and the others have mixed phases of vanadium oxide. The lowest sheet resistance was obtained for the samples prepared at 0.3 M solution. It was also found that the optical transparency of the samples changes from 70% to 35% and the optical band gap of the samples was in the range of 2.20 to 2.41 eV, depending on the morality of solution. The cycle voltammogram shows that the sample prepared at 0.3 M has one-step electerochoromic but the other samples have two-step electerochoromic. The results show a correlation between the cycle voltammogram and the physical properties of the films.展开更多
Vanadium oxides condensed films are prepared on glass substrates, using spray pyrolysis （SP） technique. The effects of substrate temperature, vanadium concentra- tion in initial solution and the solution spray rate ...Vanadium oxides condensed films are prepared on glass substrates, using spray pyrolysis （SP） technique. The effects of substrate temperature, vanadium concentra- tion in initial solution and the solution spray rate on the nano-structural, electrical, and optical properties of depos- ited films were investigated. Characterizations of the sam- ples were performed using X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spec- troscopy methods. The type and concentration of the charge carriers were determined and measured by Hall effect experiment. XRD patterns showed that the prepared films had polycrystalline structure, mostly tetragonal fl-V205 and V409 phases with the preferred orientation along （200） direction. The Hall effect experiment revealed that all samples were n-type, except the ones deposited at substrate temperatures Tsub ： 300 ~C and Tsub = 450 ~C, vanadium concentration 0.1 mol/L and solution spray rate 10 mL/min. The charge carrier concentrations obtained were in the range 1016-1018 cm-3. The lowest sheet resistance （R~） was obtained for the samples prepared at T^ub = 450 ~C, vana- dium concentration 0.05 mol/L and solution spray rate 10 mL/min. It was also found that the optical transparency of the samples changed from 20% to 75% and the optical bandgap of the samples was from 2.22 eV to 2.58 eV, depending on the deposition conditions.展开更多
采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结...采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结构,呈TiN(111)面择优取向。随V原子分数的增大,TiAlVN膜的硬度增大,抗高温氧化性能变差。当V原子分数为16.96%(即磁控溅射的V靶功率为60 W)时,TiAlVN膜的硬度最高(为31.67 GPa),抗高温氧化性能较好。展开更多
基金supported by the National Natural Science Foundation of China (Grant No 60776039)China Agricultural University Foundation (Grant No 2007037)
文摘This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were characterized with several different techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and Raman, when they were fresh from sputter chamber and aged after years, respectively, in order to determine their structure and composition. It finds that a small amount of sodium occurred on the surface of vanadium dioxide films, which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature. It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films, thus inducing much change in Raman modes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674038,61674021,61704011,and 61904017)the Developing Project of Science and Technology of Jilin Province,China(Grant Nos.20170520118JH and 20160520027JH)the Youth Foundation of Changchun University of Science and Technology(Grant No.XQNJJ-2018-18).
文摘Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H2O as the oxide source. The effect of the source temperature on the quality of vanadium oxide films and valence state was investigated. The crystallinity, surface morphology, film thickness, and photoelectric properties of the films were characterized by x-ray diffraction, atomic force microscope, scanning electron microscope, I–V characteristics curves, and UV–visible spectrophotometer. By varying the source temperature, the content of V6O11, VO2, and V6O13 in the vanadium oxide film increased, that is, as the temperature increased, the average oxidation state generally decreased to a lower value, which is attributed to the rising of the vapor pressure and the change of the ionization degree for organometallics. Meanwhile, the root-mean-square roughness decreased and the metal–insulator transition temperature reduced. Our study is great significance for the fabrication of vanadium oxide films by atomic layer deposition.
基金Funded by the Science Challenge Project(No.TZ2016001)the National Natural Science Foundation of China(Nos.11602251,51861145306 and 51872212)+3 种基金the 111 Project(No.B13035)Joint Fund of Ministry of Education for Pre-research of Equipment(No.6141A02022257)supported by the International Science&Technology Cooperation Program of China(Nos.2018YFE0103600,2014DFA53090)the Technological Innovation of Hubei Province,China(No.2019AAA030)。
文摘Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.
基金the Open Research Fund of the National Defense Key Disciplines Laboratory of Light Alloy Processing Science and Technology in Nanchang Hangkong University(No.gf200901002)the Analytical and Testing Center of Huazhong University of Science and Technology
文摘V2Os/TiO2 composite films were prepared on pure titanium substmtes via micro-arc oxidation （MAO） in electrolytes consisting of NaVO3. Their morphology and dements were characterized by scanning electron microscopy （SEM） and energy-dispersive X-ray （EDX） analysis. Phase composition and valence states of species in the films were characterized by X-ray diffraction （XRD） and X-ray photoelec- tron spectroscopy （XPS）. Ultraviolet-visible diffuse reflectance spectra （UV-Vis DRS） were also employed to evaluate the photophysical property of the films. The VEOs/TiO2 composite films show a sheet-like morphology. Not only V205 phase appears in the films when the NaVO3 concentration of the electrolyte is higher than 6,10 g/L and is loaded at the surface of anatase, but also V4＋ is incorporated into the crystal lattice of anatase. In comparison with pure TiO2 films the V2Os/TiO2 composite films exhibit significantly narrow band gap energy. The film prepared in an electrolyte consisting of NaVO3 with a concentration of 8.54 g/L exhibits the narrowest band gap energy, which is approximately 1.89 eV. The V2Os/TiO2 composite films also have the significantly enhanced visible light photocatalytic activity. The film prepared in an electrolyte consisting of NaVO3 with a concentration of 8.54 g/L exhibits the best photocatalytic activity and about 93% of rhodamine is degraded after 14 h visible light radiation.
文摘An original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ndoped VOx deposited with changing oxygen flow in the reactive gas mixture. In order to compare with the numerical model, N-doped VOx films are prepared by reactive magnetron sputtering from a metallic vanadium target immersed in a reactive gas mixture of Ar＋O2＋N2. Both experimental and numerical results show that the addition of N2 to the process alleviates the hysteresis effect with respect to the oxygen supply. Film compositions obtained from the XPS analysis are compared to the numerical results and the agreement is satisfactory. The results also show that the compound of VN is only found at very low O concentration because of the replacement reaction of VN by O2 atoms with higher oxygen flow rate.
基金This research work was supported by the National Nature Science Foundation of China under Grant No. 60477040.
文摘A novel nanopolycrystalline structure of vanadium dioxide thin films is deposited on silicon or fused silica substrates by reactive ion sputtering and followed by an annealing. The characteristic analysis＇shows that the films have a columnar nanostructure with an average grain of 8 nm. The resistivities as a function of ambient temperatures tested by four-point probes for as-deposited films present that the transition temperature for nanostructure of vanadium dioxide films is near 35 ℃ which lowers about 33 ℃ in comparison with the transition temperature at 68 ℃ in its microstructure.
文摘Vanadium oxide thin films were prepared on glass substrates by using the spray pyrolysis technique. The effect of solution concentration （0.1 M, 0.2 M and 0.3 M ） on the nanostructural, electrical, optical, and electrochromic properties of deposited films were investigated using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy, and cyclic volta-metrics. The X-ray diffraction shows that only the sample at 0.1 M has a single fl-V205 phase and the others have mixed phases of vanadium oxide. The lowest sheet resistance was obtained for the samples prepared at 0.3 M solution. It was also found that the optical transparency of the samples changes from 70% to 35% and the optical band gap of the samples was in the range of 2.20 to 2.41 eV, depending on the morality of solution. The cycle voltammogram shows that the sample prepared at 0.3 M has one-step electerochoromic but the other samples have two-step electerochoromic. The results show a correlation between the cycle voltammogram and the physical properties of the films.
文摘Vanadium oxides condensed films are prepared on glass substrates, using spray pyrolysis （SP） technique. The effects of substrate temperature, vanadium concentra- tion in initial solution and the solution spray rate on the nano-structural, electrical, and optical properties of depos- ited films were investigated. Characterizations of the sam- ples were performed using X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spec- troscopy methods. The type and concentration of the charge carriers were determined and measured by Hall effect experiment. XRD patterns showed that the prepared films had polycrystalline structure, mostly tetragonal fl-V205 and V409 phases with the preferred orientation along （200） direction. The Hall effect experiment revealed that all samples were n-type, except the ones deposited at substrate temperatures Tsub ： 300 ~C and Tsub = 450 ~C, vanadium concentration 0.1 mol/L and solution spray rate 10 mL/min. The charge carrier concentrations obtained were in the range 1016-1018 cm-3. The lowest sheet resistance （R~） was obtained for the samples prepared at T^ub = 450 ~C, vana- dium concentration 0.05 mol/L and solution spray rate 10 mL/min. It was also found that the optical transparency of the samples changed from 20% to 75% and the optical bandgap of the samples was from 2.22 eV to 2.58 eV, depending on the deposition conditions.
文摘采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结构,呈TiN(111)面择优取向。随V原子分数的增大,TiAlVN膜的硬度增大,抗高温氧化性能变差。当V原子分数为16.96%(即磁控溅射的V靶功率为60 W)时,TiAlVN膜的硬度最高(为31.67 GPa),抗高温氧化性能较好。
