Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Determination of Nickel and Palladium in Environmental Samples by Low Temperature ETV-ICP-OES Coupled with Liquid-liquid Extraction with Dimethylglyoxime as Both Extractant and Chemical Modifier

A novel method for the determination of nickel and palladium in environmental samples by low temperature ETV-ICP-OES with dimethylglyoxime（DMG） as both the extractant and chemical modifier has been developed. In this study, it was found that nickel and palladium can form complexes with dimethylglyoxime（0. 05%, mass fraction） at pH 6.0 and can be extracted into chloroform quantitatively. The complexes can be evaporated into plasma at a suita-ble temperature（ 1400℃） for ICP-OES detection. Under the optimized conditions, the detection limits of nickel and palladium are 0.48 and 0. 40 ng/mL, respectively, while the RSD values are separately 5.0% and 3.1% （p = 50 ng/mL, n = 7）. The proposed method was applied to the determination of the target analytes in environmental sam-ples with satisfactory results.

Effect of Deposition Time on Microstructures and Growth Behavior of ZrC Coatings Prepared by Low Pressure Chemical Vapor Deposition with the Br2-Zr-C3H6-H2-Ar System

ZrC coatings were deposited on graphite substrates by low pressure chemical vapor deposition（LPCVD） with the Br2-Zr-C3H6-H2-Ar system. The effects of deposition time on the microstructures and growth behavior of ZrC coatings were investigated. ZrC coating grew in an island-layer mode. The formation of coating was dominated by the nucleation of ZrC in the initial 20 minutes, and the rapid nucleation generated a fine-grained structure of ZrC coating. When the deposition time was over 30 min, the growth of coating was dominated by that of crystals, giving a column-arranged structure. Energy dispersive X-ray spectroscopy showed that the molar ratio of carbon to zirconium was near 1：1 in ZrC coating, and X-ray photoelectron spectroscopy showed that ZrC was the main phase in coatings, accompanied by about 2.5mol% ZrO2 minor phase.

Establishment and analysis of global gridded Tm-Ts relationship model

In ground-based GPS meteorology, Tm is a key parameter to calculate the conversion factor that can convert the zenith wet delay（ZWD） to precipitable water vapor（PWV）. It is generally acknowledged that Tm is in an approximate linear relationship with surface temperature Ts, and the relationship presents regional variation. This paper employed sliding average method to calculate correlation coefficients and linear regression coefficients between Tm and Ts at every 2°× 2.5° grid point using Ts data from European Centre for Medium-Range Weather Forecasts（ECMWF） and Tm data from ＂GGOS Atmosphere＂, yielding the grid and bilinear interpolation-based Tm Grid model. Tested by Tm and Ts grid data, Constellation Observation System of Meteorology, Ionosphere, and Climate（COSMIC） data and radiosonde data, the Tm Grid model shows a higher accuracy relative to the Bevis Tm-Ts relationship which is widely used nowadays. The Tm Grid model will be of certain practical value in high-precision PWV calculation.

Behavior of Element Vaporization and Composition Control of Fe-Ga Alloy during Vacuum Smelting

Saturated vapor pressure, critical evaporation temperature and evaporation loss rate of Fe-Ga alloy were calculated under different conditions of Ga and Fe contents with activity coefficients. The relationship between the change of Ga content and melting time was determined. The results demonstrated that saturated vapor pressure of Ga was higher than that of Fe under the same conditions. The difference value of critical evaporation temperature of Ga with and without Ar was nearly 800 K. The critical evaporation temperature of Fe was higher than that of Ga under vacuum, indicating that Ga was more volatile than Fe. At 1800 K, the evaporation rate of Ga was 84 times higher than that of Fe in the melt of Fe81Ga19 alloy. Under this condition, the change of Ga content and smelting time kept a linear relationship. The higher the temperature was, the faster the Ga content decreased, which was consistent with theoretical calculations.