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Calculation of Vapour Pressure of Metals by Statistical-Mechanical Method With the Debye Model
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作者 王正刚 罗玲 《Journal of Beijing Institute of Technology》 EI CAS 1992年第2期132-138,共7页
Statistical expression of vapour pressure equations of metals is derived from the Debye model.The statistical distribution of T_(-p) ensemble is presented in an in-elab- orate mode and the partition function is define... Statistical expression of vapour pressure equations of metals is derived from the Debye model.The statistical distribution of T_(-p) ensemble is presented in an in-elab- orate mode and the partition function is defined.The vapour pressure of eleven metals have been calculated with the Debye equation and compared with those given by the E- instein equation and empirical equation.Comparison of results of calculation from dif- ferent methods show their evident accordance within the same orders of magnitude. 展开更多
关键词 thermodynamical models vapour pressure statistical mechanics Debye model CALCULATION
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SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes
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作者 王悦湖 张义门 +3 位作者 张玉明 张林 贾仁需 陈达 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第3期416-420,共5页
This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapou... This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively. 展开更多
关键词 4H-silicon carbide low pressure horizontal hot-wall chemical vapour deposition atomic force microscope scanning electron microscopy
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Evidence of Hydropassive Movement in Stomatal Oscillations of Glycyrrhiza inflata under Desert Conditions 被引量:8
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作者 王根轩 廖建雄 吴冬秀 《Acta Botanica Sinica》 CSCD 2001年第1期41-45,共5页
Stomatal conductance was found to change from steady-state to a slate of oscillations during daytime when vapour pressure deficit (VPD) increased to a value of 1 kPa in Glycyrrhiza inflata Batalin grown under the cond... Stomatal conductance was found to change from steady-state to a slate of oscillations during daytime when vapour pressure deficit (VPD) increased to a value of 1 kPa in Glycyrrhiza inflata Batalin grown under the conditions of arid desert in north-west China. The injected metabolic inhibitors (NaN3 or carbonyl cyanide-m-chlorophenyl-hydrazone (CCCP)) slightly reduced the stomatal conductance but did not significantly decrease the intensity of stomatal oscillations (amplitude/average). The oscillation intensity was found to he significantly correlated with VPD and root resistance, but not with the respiration rate. There might exist a minimum threshold of VPD (0.8 kPa) and root resistance (1/4 relative value) that induced stomatal oscillations. These results suggested that stomatal oscillations induced by atmospheric drought stress and root resistance were mainly a type of hydropassive movement. 展开更多
关键词 stomatal oscillations Glycyrrhiza inflata hydropassive movement stomatal conductance vapour pressure deficit
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Different xylogenesis responses to atmospheric water demand contribute to species coexistence in a mixed pine–oak forest
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作者 Marín Pompa-García J.Julio Camarero Michele Colangelo 《Journal of Forestry Research》 SCIE CAS CSCD 2023年第1期51-62,共12页
Seasonal patterns of wood formation(xylogenesis)remain understudied in mixed pine-oak forests despite their contribution to tree coexistence through temporal niche complementarity.Xylogenesis was assessed in three pin... Seasonal patterns of wood formation(xylogenesis)remain understudied in mixed pine-oak forests despite their contribution to tree coexistence through temporal niche complementarity.Xylogenesis was assessed in three pine species(Pinus cembroides,Pinus leiophylla,Pinus engelmannii)and one oak(Quercus grisea)coexisting in a semi-arid Mexican forest.The main xylogenesis phases(production of cambium cells,radial enlargement,cell-wall thickening and maturation)were related to climate data considering 5-15-day temporal windows.In pines,cambium activity maximized from mid-March to April as temperature and evaporation increased,whereas cell radial enlargement peaked from April to May and was constrained by high evaporation and low precipitation.Cell-wall thickening peaked from June to July and in August-September as maximum temperature and vapour pressure deficit(VPD)increased.Maturation of earlywood and latewood tracheids occurred in May-June and June-July,enhanced by high minimum temperatures and VPD in P.engelmannii and P.leiophylla.In oak,cambial onset started in March,constrained by high minimum temperatures,and vessel radial enlargement and radial increment maximized in April as temperatures and evaporation increased,whereas early wood vessels matured from May to June as VPD increased.Overall,15-day wet conditions enhanced cell radial enlargement in P.leiophylla and P.engelmannii,whereas early-summer high 15-day temperature and VPD drove cell-wall thickening in P.cembroides.Warm night conditions and high evaporation rates during spring and summer enhanced growth.An earlier growth peak in oak and a higher responsiveness to spring-summer water demand in pines contributed to their coexistence. 展开更多
关键词 Bimodal growth Drought vapour pressure deficit Wood formation Xylem phenology
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Study on reaction mechanism of YBa_2Cu_3O_(7-x) film by TFA-MOD process
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作者 丁发柱 吕旭东 +2 位作者 古宏伟 李弢 曹江利 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第4期1631-1636,共6页
This paper systematically investigates the intermediate phases of YBa2Cu3O7-x (YBCO) film prepared by metalorganic deposition method using trifluoroacetates (TFA-MOD). According to x-ray diffraction and Raman anal... This paper systematically investigates the intermediate phases of YBa2Cu3O7-x (YBCO) film prepared by metalorganic deposition method using trifluoroacetates (TFA-MOD). According to x-ray diffraction and Raman analyses, the precursor film decomposed in a mixture of BaF2, Y203 and CuO after the pyrolysis process. Then these inter- mediate phases converted into tetragonal YBa2Cu3O6.5 at about 725 ℃. The influence of water vapour pressure on the YBa2Cu3O7-x film growth on LaAlO3 single-crystal substrates was also studied. The films prepared at low water vapour pressures (40-140 hPa) showed poor electrical performance due to the a-axis grain structure and impurity phases. However, the films prepared at 190hPa exhibited the highest critical temperature of 90 K and the highest Jc of 3.8 MA/cm2, which was attributed to the formation of a purer YBCO phase and stronger biaxial texture. 展开更多
关键词 TFA-MOD YBCO intermediate phase water vapour pressure
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Analysis of Variation Characteristics of Sunshine in Recent 56 Years in Huanren Area
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作者 刘闯 祝奎 +1 位作者 邵兵 廖晶晶 《Agricultural Science & Technology》 CAS 2011年第11期1707-1710,共4页
On the basis of 56 years of measured data concerning sunshine duration in Huanren County, the decadal, annual, seasonal, and monthly variation characteristics of sunshine duration in recent 56 years and its relationsh... On the basis of 56 years of measured data concerning sunshine duration in Huanren County, the decadal, annual, seasonal, and monthly variation characteristics of sunshine duration in recent 56 years and its relationship with relative sunshine, total cloudiness, lower cloudiness and water vapour pressure in Huanren area are interpreted in this paper. It demonstrates that the annual, seasonal and monthly sunshine duration show a decreasing trend, decreasing with rapidest speed in spring and slowest speed in winter. The sunshine hours in each month in Huanren area tend to decline, among which the decreasing trend is more obvious in May and less in February. The annual variation of sunshine duration is consistent with sunshine percentage. Sudden change of sunshine duration occurred around 1992. Annual low cloudiness and vapour pressure are slightly increasing. The significantly negative correlation exists between sunshine hours and low cloudiness, and total cloud cover and water vapour pressure are the major factors responsible for decline in sunshine hours in Huanren area. 展开更多
关键词 SUNSHINE CLOUDINESS vapour pressure Huanren area
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GaN晶体的生长及其低维材料的制备
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作者 陈小龙 《人工晶体学报》 EI CAS CSCD 北大核心 2000年第S1期140-141,共2页
Wurtzite strcture gallium nitride, GaN,a direct bandgap semiconductor (3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ti ng diodes, laser diodes,and high power integrated cir... Wurtzite strcture gallium nitride, GaN,a direct bandgap semiconductor (3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ti ng diodes, laser diodes,and high power integrated circuits.Recent progress in th in film crystal technique has realized the output of blue semiconductor lasers w i th a lifetime of over 10000 hours under continuous wave operation at room tempe r ature.So far GaN and its ternary indium and aluminum alloys are grown almost uni v ersally on foreign substrates with varying lattice mismatches.The mismatch undou btedly results in a significant dislocation density in the grown films.Hence it is necessary to grow single crystal GaN to be used as substrates for improvement of laser diodes.On the other hand,low dimensional GaN materials such as nanocry stalline powder,nanocrystal assembled bulk(nanophase) and nano wires are very u seful in both fundamental mesoscopic research and future development of GaN nano devices.Here we report our main recent progresses on the crystal growth of GaN a nd the preparation of its low dimensional materials. 展开更多
关键词 GaN crystal semicondactor material vapour method high tem perature and high pressure method flux method hydrothermal method.
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A Statistical Mechanical Equation of State for Fluid UF4 and ThF4
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作者 Shisheng Wang Wemer Maschek 《Journal of Energy and Power Engineering》 2012年第2期178-187,共10页
Uranium tetrafluoride, UF4, and thorium tetrafluoride, ThF4, can be used as fuels in molten salt reactors. For the molten salt reactor design and safety analysis, it is essential to know the thermodynamic properties o... Uranium tetrafluoride, UF4, and thorium tetrafluoride, ThF4, can be used as fuels in molten salt reactors. For the molten salt reactor design and safety analysis, it is essential to know the thermodynamic properties of the UF4 and ThF4 materials. However, the experimental data for UF4 and ThF4 P-V-T are scarce in literature. Under this circumstance prediction of the thermodynamic properties can be supported by theoretical calculations to remedy missing experimental data. Within this paper the Song, Mason and lhm's equation of state with modification of Tao and Mason, originally derived for spherical and molecular fluids, is applied for fluid UF4 and ThF4 based on the available experimental data. The equation of state is based on statistical mechanical perturbation theory with the perturbation scheme of Weeks, Chandler, and Andresen. The prediction of constants applied in the equation of state is based on the work of Boushehri et al. using data for heat of vaporization and liquid density at the triple point. The calculation of the heat of vaporization applies the "sigma" method reported by Darken et al. with the vapour pressure data and heat capacities of liquid and vapour of UF4 and ThF4. Finally an extra correction term for the vapour pressure is introduced into the new equation of state. The results show that this equation of state agrees reasonably well with the available experimental data. It can be expected that this equation of state can be applied also for conditions where experimental data are currently missing. 展开更多
关键词 Molten salt reactor UF4 ThF4 equation of state (EOS) DENSITY vapour pressure.
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Regulation of the water status in three co-occurring phreatophytes at the southern fringe of the Taklamakan Desert 被引量:13
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作者 Frank M.Thomas Andrea Foetzki +4 位作者 Dirk Gries Helge Bruelheide Xiangyi Li Fanjiang Zeng Ximing Zhang 《Journal of Plant Ecology》 SCIE 2008年第4期227-235,共9页
Aims We investigated the regulation of the water status in three predominant perennial C3 phreatophytes(Alhagi sparsifolia,Populus euphratica,Tamarix ramosissima)at typical sites of their occurrence at the southern fr... Aims We investigated the regulation of the water status in three predominant perennial C3 phreatophytes(Alhagi sparsifolia,Populus euphratica,Tamarix ramosissima)at typical sites of their occurrence at the southern fringe of the hyperarid Taklamakan Desert(north-west China).Methods In the foreland of the river oasis of Qira(Cele),we determined meteorological variables,plant biomass production,plant water potentials(WL)and the water flux through the plants.We calculated the hydraulic conductance on the flow path from the soil to the leaves(kSL)and tested the effects of kSL,WL and the leaf-to-air difference in the partial pressure of water vapour(Dw)on stomatal regulation using regression analyses.Important Findings Despite high values of plant water potential at the point of turgor loss,all plants sustained WL at levels that were high enough to maintain transpiration throughout the growing season.In A.sparsifolia,stomatal resistance(rs;related to leaf area or leaf mass)was most closely correlated with kSL;whereas in P.euphratica,~70%of the variation in rs was explained by Dw.In T.ramosissima,leaf area-related rs was significantly correlated with WL and kSL.The regulation mechanisms are in accordance with the growth patterns and the occurrence of the species in relation to their distance to the ground water. 展开更多
关键词 aboveground growth extreme aridity stomatal conductance transpirational demand vapour pressure deficit
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Modeling of coal swelling induced by water vapor adsorption 被引量:5
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作者 Zhejun PAN 《Frontiers of Chemical Science and Engineering》 SCIE EI CAS CSCD 2012年第1期94-103,共10页
Gas adsorption-induced coal swelling is a well- know phenomenon. Coal swelling or shrinkage by adsorption or desorption of water vapor has not been well understood but has significant implications on gas drainage proc... Gas adsorption-induced coal swelling is a well- know phenomenon. Coal swelling or shrinkage by adsorption or desorption of water vapor has not been well understood but has significant implications on gas drainage process for underground coal mining and for primary and enhanced combed methane production. Decreased matrix moisture content leads to coal shrinkage and thus the change of cleat porosity and permeability under reservoir conditions. Unlike gas adsorption in coal which usually forms a single layer of adsorbed molecules, water vapor adsorption in the coal micropores forms multilayer of adsorbed molecules. In this work, a model has been developed to describe the coal swelling strain with respect to the amount of moisture intake by the coal matrix. The model extended an energy balance approach for gas adsorption-induced coal swelling to water vapor adsorption-induced coal swelling, assuming that only the first layer of adsorbed molecules of the multilayer adsorption changes the surface energy, which thus causes coal to swell. The model is applied to describe the experimental swelling strain data measured on an Aus- tralian coal. The results show good agreement between the model and the experimental data. 展开更多
关键词 multilayer adsorption vapour pressure coalshrinkage relative humidity PERMEABILITY
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