Four-stage cascaded variable optical attenuator with large attenuation range for quantum key distribution

A four-stage cascaded variable optical attenuator(VOA)with a large attenuation range is presented.The VOA is based on a Mach–Zehnder interferometer(MZI)and fabricated in a silica-based planar lightwave circuit(PLC)platform.The thermo-optic effect is used to achieve intensity modulation.The measured maximum attenuation of the four-stage cascaded VOA is 88.38 d B.The chip is also tested in a quantum key distribution(QKD)system to generate signal and decoy states.The mean photon number after attenuation of the four-stage cascaded VOA is less than 0.1,which can meet the requirement of QKD.

Low power consumption 4-channel variable optical attenuator array based on planar lightwave circuit technique

The power consumption of a variable optical attenuator（VOA） array based on a silica planar lightwave circuit was investigated. The thermal field profile of the device was optimized using the finite-element analysis. The simulation results showed that the power consumption reduces as the depth of the heat-insulating grooves is deeper, the up-cladding is thinner,the down-cladding is thicker, and the width of the cladding ridge is narrower. The materials component and thickness of the electrodes were also optimized to guarantee the driving voltage under 5 V. The power consumption was successfully reduced to as low as 155 mW at an attenuation of 30 dB in the experiment.

The 650-nm variable optical attenuator based on polymer/silica hybrid waveguide

Visible light variable optical attenuators（VOA） are essential devices in the application of channel power regulation and equalization in wavelength-division multiplexing cross-connect nodes in plastic optical fiber（POF） transmission systems.In this paper, a polymer/silica hybrid waveguide thermo–optic attenuator based on multimode interference（MMI） coupler is designed and fabricated to operate at 650 nm. The single-mode transmission condition, MMI coupler, and transition taper dimensions are optimized through the beam propagation method. Thermal analysis based on material properties provides the optimized heater placement angle. The fabricated VOA presents an attenuation of 26.5 dB with a 21-mW electrical input power at 650 nm. The rise time and fall time are 51.99 and 192 μs, respectively. The time–stability measurement results prove its working reliability.

Variable optical attenuators with ability to independently control two orthogonal linearly polarized light amplitudes

New techniques for controlling the amplitudes of two orthogonal linearly polarized light are presented. One is based on adjusting the DC voltage into a Mach–Zehnder modulator（MZM） to alter the amplitude of the light traveling on the slow axis of a fiber into the modulator with little changes in the fast-axis light amplitude.Another is based on adjusting the input DC voltages of a dual-polarization MZM operating in the reverse direction, which enables independent control of the two input orthogonal linearly polarized light amplitudes.Experimental results demonstrate that more than 30 dB difference in slow-and fast-axis light power can be obtained by controlling an MZM input DC voltage, and over 24 dB independent power adjustment for light traveling on the slow and fast axes into a dual-polarization MZM.

Wideband, 50 dB Attenuation Range Liquid Crystal Based Variable Optical Attenuator

A compact variable optical attenuator, covering C and L bands with over 50 dB attenuation range, is realized using a single liquid crystal cell with a tilted fused silica coating compensating the cell's small residual birefringence.

NEAR INFRARED ELECTROCHROMIC VARIABLE OPTICAL ATTENUATOR FABRICATED BY LAYER-BY-LAYER ASSEMBLY

An eleetrochromic variable optical attenuator （ECVOA） was fabricated by layer-by-layer （LBL） assembly of disodium N,N-bis（p-sulfonatophenyl）naphthalenedicarboximide （Naph-SO3Na） and common cationic polymer poly（diallyldimethylammonium） chloride （PDDA）. The UV-Vis absorption spectra of the multilayer films revealed that approximately an equal amount of Naph-SO3Na was assembled in each deposition cycle. Upon one-electron reduction, multilayer films exhibited intense absorption around 452 nm and also a broad absorption band from 1200 nm to 1900 nm. Owing to the improved ionic conductivity, the optical attenuation at 1550 nm of the films showed rapid response time and reached 1.3 dB/μm within 5 s. These results indicate that layer-by-layer assembly could be an effective method for the preparation of ECVOA operating in near infrared region.

A 1×4 Polymeric Digital Optical Switch Based on the Thermo-Optic Effect

We present a 1 × 4 Y-branch digital optical switch in which S-bend variable optical attenuators are integrated. The S-bend waveguides, which are always introduced to connect the switch and the standard fiber array, are made use of and designed as variable optical attenuators. A compact device with low crosstalk and larger branching-angle is obtained. The device is fabricated on the thermo-optic polymer materials,and the performance of the device is measured. With an applied driving power of less than 200mW, the device has a low crosstalk of less than - 35dB at a wavelength of 1.55 μm.

16-channel dual-tuning wavelength division multiplexer/demultiplexer

A 16-channel dual tuning wavelength division multiplexer/demultiplexer based on silicon on insulator platform is demonstrated, which is both peak wavelength tunable and output optical power tunable. The wavelength division multiplexer/demultiplexer consists of an arrayed waveguide grating for wavelength division multiplexing/demultiplexing, a heater for peak wavelength tuning and a variable optical attenuator based on p–i–n carrier-injection structure for optical power tuning. The experimental results show that the insertion loss on chip of the device is 3.7 dB–5.7 dB and the crosstalk is 7.5 dB–9 dB. For the tunability of the peak wavelength, 1.058-nm wavelength tunability is achieved with 271.2-mW power consumption, and the average modulation efficiency is 3.9244 nm/W; for the tunability of the optical power, the optical power equalization is achieved in all 16 channels, 20-dB attenuation is achieved with 144.07-mW power consumption,and the raise/fall time of VOA is 35 ns/42 ns.

Research progresses of SOI optical waveguide devices and integrated optical switch matrix

SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.