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The characteristics of frequency-time azimuth spectrum estimation by a vector hydrophone in shallow water 被引量:1
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作者 DA Lianglong HOU Wenshu SUN Qindong 《Chinese Journal of Acoustics》 CSCD 2018年第1期1-17,共17页
The mechanism of interaction between the energy flows of the far-field ship noise and the near-field platform is studied, and the characteristics of frequency-time azimuth spec- trum is discussed. Based on normal mode... The mechanism of interaction between the energy flows of the far-field ship noise and the near-field platform is studied, and the characteristics of frequency-time azimuth spec- trum is discussed. Based on normal modes theory in acoustic vector fields, the model of the near-field platform is established, and the simulated result is similar to the investigation in shallow water. The frequency-time aziinuth spectrum of the energy flow is investigated by the vector hydrophone changes with frequency. The energy flow of the far-field ship noise interacts with the near-field platform, so four kinds of stripes are shown in the frequency4ime azimuth spectrum, which is the same with the investigation of sea trial. The estimation of direction of arrival appears inaccuracy, and varies with frequency. The main factor that affects the charac- teristics of frequency-time azimuth spectrum of resultant energy flow is the difference of sound pressure level. The estimation of the direction of arrival benefits from this when a number of sources exist in shallow water. 展开更多
关键词 The characteristics of frequency-time azimuth spectrum estimation by a vector hydrophone in shallow water
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An improved single-π equivalent circuit model for on-chip inductors in GaAs process 被引量:1
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作者 Hansheng Wang Weiliang He +1 位作者 Minghui Zhang Lu Tang 《Journal of Semiconductors》 EI CAS CSCD 2017年第11期91-96,共6页
An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect bra... An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process. 展开更多
关键词 on-chip inductors GaAs process equivalent circuit model substrate lateral coupling branch improved characteristic function approach vector fitting
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