A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice wi...A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabri- cated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61464002)the Science and Technology Fund of Guizhou Province(No.Qian Ke He J Zi[2014]2066)the Dr.Fund of Guizhou University(No.Gui Da Ren Ji He Zi(2013)20Hao)
文摘A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabri- cated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated.
