Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices （VHDs） with four contacts and six contacts are asymmetrical in structural design but symmetrical in t...Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices （VHDs） with four contacts and six contacts are asymmetrical in structural design but symmetrical in the current flow that can be well fit for the spinning current technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD embedded in a deep n-well with four contacts. Furthermore, to make the calculation more accurate, the junction field effect is also involved into the conformal mapping method. The error between calculated and simulated results is less than 5% for the currentrelated sensitivity, and approximately 13% for the voltage-related sensitivity. This proves that such calculations can be used to predict the optimal structure of the vertical Hall-devices.展开更多
基金supported by the Natural Science Foundation of Jiangsu Province,China(Nos.BK20131379,BK20141431)the Graduate Research and Innovation Projects of Jiangsu Province(No.SJLX_0373)
文摘Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices （VHDs） with four contacts and six contacts are asymmetrical in structural design but symmetrical in the current flow that can be well fit for the spinning current technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD embedded in a deep n-well with four contacts. Furthermore, to make the calculation more accurate, the junction field effect is also involved into the conformal mapping method. The error between calculated and simulated results is less than 5% for the currentrelated sensitivity, and approximately 13% for the voltage-related sensitivity. This proves that such calculations can be used to predict the optimal structure of the vertical Hall-devices.
