2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current.

The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.

Current–Voltage Characteristics of the Aziridine-Based Nano-Molecular Wires: a Light-Driven Molecular Switch

Using nonequilibrium Green＇s function formalism combined first-principles density functional theory, we analyze the transport properties of a 4,4-dimethyl-6-（4-nitrophenyl）-2-phenyl-3,5-diaza-bicyclo[3.1.0]hex-2-ene molecular optical switch. The title molecule can convert between closed and open forms by visible or ultraviolet irradiation. The I-V characteristics, differential conductance, on-off ratio, electronic transmission coefficients, spatial distribution of molecular projected self-consistent Hamiltonian orbitals, HOMO-LUMO gaps, effect of electrode materials Y（111）（Y =Au, Ag and Pt） on electronic transport and different molecular geometries corresponding to the closed and open forms through the molecular device are discussed in detail. Based on the results, as soon as possible the open form translates to the closed form, and there is a switch from the ON state to the OFF state（low resistance switches to high resistance）. Theoretical results show that the donor/acceptor substituent plays an important role in the electronic transport of molecular devices. The switching performance can be improved to some extent through suitable donor and acceptor substituents.

Current-voltage characteristics with several threshold currents in insulating low-doped La_(1–x)Sr_xMnO_3(x=0.10) thin films

The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.

Electrical characteristics of new three-phase traction power supply system for rail transit

A novel three-phase traction power supply system is proposed to eliminate the adverse effects caused by electric phase separation in catenary and accomplish a unifying manner of traction power supply for rail transit.With the application of two-stage three-phase continuous power supply structure,the electrical characteristics exhibit new features differing from the existing traction system.In this work,the principle for voltage levels determining two-stage network is dissected in accordance with the requirements of traction network and electric locomotive.The equivalent model of three-phase traction system is built for deducing the formula of current distribution and voltage losses.Based on the chain network model of the traction network,a simulation model is established to analyze the electrical characteristics such as traction current distribution,voltage losses,system equivalent impedance,voltage distribution,voltage unbalance and regenerative energy utilization.In a few words,quite a lot traction current of about 99%is undertaken by long-section cable network.The proportion of system voltage losses is small attributed to the two-stage three-phase power supply structure,and the voltage unbal-ance caused by impedance asymmetry of traction network is less than 1‰.In addition,the utilization rate of regenerative energy for locomotive achieves a significant promotion of over 97%.

The Optimization on Operation Characteristicsof Urban Medium Voltage Network

Traditional small current grounding system has many advantages. Pilot operation shows that optimized one has even better operation characteristics. It has proven to be a geenrallly properand relatively perfect neutyal grounding method in urban MV network.

Electrical Characteristics of an Alternating Current Plasma Igniter in Airflow

The electrical characteristics of an alternating current （AC） plasma igniter were investigated for a working gas of air at atmospheric pressure. The discharge voltage and current were measured in air in both breakdown and stable combustion processes, respectively, and the current-zero phenomena, voltage-current （V-I） characteristics were studied for different working gas flow rates. The results indicated that the working gas between anode and cathode could be ionized to generate gas discharge when the voltage reached 8 kV, and the maximum current was 33.36 A. When the current came to zero, current-zero phenomena appeared with duration of 2 #s. At the current-zero moment, dynamic resistance between electrodes became extremely high, and the maximum value could reach 445 kf~, which was the main factor to restrain the current. With increasing working gas flow rates, the gradient of V-I characteristic curves was increased, as was the dynamic resistance. At a constant driven power, the discharge voltage increased.

Characteristics and Temperature Measurement of a Non-Transferred Cascaded DC Plasma Torch

Dependence of the current-voltage characteristics of a non-transferred DC cascaded plasma torch used for nanoparticle synthesis, on the plasma current and the plasma argon gas flow rate are reported in this paper. The potential structure inside the torch and its dependence on the plasma current and gas flow rate are also investigated. The arc voltage is seen to exhibit negative characteristic for a current below 150 A and positive characteristic above that current value. The voltage drop near the electrodes is found to decrease with the increase in plasma current. 25~ of the total voltage is dropped near the cathode at a plasma current of 50 A and a argon plasma gas flow rate of 10 liter per minute （LPM）, and it decreases to 12% with the current increasing to 300 A, and to 17% with a gas flow rate of 25 LPM. The variation in the torch efficiency with the gas flow rate and plasma current is also reported. The efficiency of the torch is found to be between 36% and 48%. In addition, the plasma gas temperature at various positions of the reactor and for different currents and voltages are measured by calorimetric estimation with a heat balance technique.

Energy gap suppression and excess current in TI2Ba2CaCu208 intrinsic Josephson junctions

Intrinsic Josephson junctions in misaligned T12Ba2CaCu208 thin film were fabricated on LaA103 substrate. The temperature dependence of the critical current is investigated around liquid nitrogen temperature. In the current voltage characteristic, large voltage jump and lack of resistive branch are observed, which shows good consistency with the intrinsic Josephson junctions. By analyzing the large gap voltage in the curve, great suppression of the energy gap is found. Through discussing the temperature dependence of the gap voltage in liquid nitrogen temperature, it is shown that this phenomenon can be caused by the non-equilibrium quasiparticle injection. The temperature influence on the excess current also confirms the non-equilibrium effect.

Numerical simulation and experimental validation of a direct current air corona discharge under atmospheric pressure

Air corona discharge is one of the critical problems associated with high-voltage equipment. Investigating the corona mechanism plays a key role in enhancing the electrical insulation performance. An improved self-consistent multi-component two-dimensional plasma hybrid model is presented for the simulation of a direct current atmospheric pressure corona discharge in air. The model is based on plasma hydrodynamic and chemical models, and includes 12 species and 26 reactions. In addition, the photoionization effect is introduced into the model. The simulation on a bar-plate electrode configuration with an inter-electrode gap of 5.0 mm is carried out. The discharge voltage- current characteristics and the current density distribution predicted by the hybrid model agree with the experimental measurements. In addition, the dynamics of volume charged species generation, discharge current waveform, current density distribution at an electrode, charge density, electron temperature, and electric field variations are investigated in detail based on the model. The results indicate that the model can contribute valuable insights into the physics of an air plasma discharge.

Fabrication and characteristics of nitrogen-doped nanocrystalline diamond/p-type silicon heterojunction

Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional argon(Ar).The N-NDFs were characterized by X-ray diffraction,Raman spectroscopy,and scanning electron microscopy.The grain sizes are of 8~10 nm in dimension.The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 102 at^7.8 V,and the current density reaches to1.35 A/cm2 at forward voltage of 8.5 V.The findings suggest that fabricated by CH_4/H_2/N_2 without Ar,the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy （LPE） tech-nology. Scanning electron microscopy （SEM） images and X-ray diffraction （XRD） patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared （FTIR） transmittance spectra exhibited that the cutoff wave-lengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage （I-V） characteristics with a high differential-resistance-area-product at zero bias （R0A） of 1.02×10-1 Ωcm2 at room temperature indicate that the fine p-n junctions have been obtained.

Electrical Modeling of a Silicon Photovoltaic Solar Cell: Comparative Study of Models Characterizing the Photovoltaic Solar Cell

In this article we make a detailed study and a presentation of the different models of circuit’s equivalent to silicon-based photovoltaic solar cells. Starting from a real solar cell and real phenomena from the manufacture of the cell to the production of current by the cell. A comparison of the models with a real experimental method is carried out. The comparison is based on an overlay of the results. The study allowed us to choose the most suitable model. We are interested in the losses by leaks and the losses due to the development of the cell. In fact, we studied the influence of the shunt resistance on the current-voltage characteristic and the electrical power.

可控电流源型换流器IGCT串联均压技术

高压大功率逆阻型集成门极换流晶闸管(integrated gate commutation thyristor,IGCT)串联是可控电流源型换流器的关键技术之一,主要面临开通和关断不一致将会引起击穿的问题,目前尚缺乏深入研究和实验测试。该文首先分析可控电流源型换流器均压问题产生的原因,提出串联器件均压电路。接着,对开通不一致影响因素进行分析,给出IGCT使用电压和保护电压的配合关系,以确保开通过程器件安全。然后,对IGCT的自然和主动关断2种特殊关断过程影响因素进行分析,给出缓冲电路参数选择方法。最后,研制8级串联的IGCT模块样机,搭建实验平台进行测试。结果表明,所提方法能够有效抑制IGCT关断电压过冲,均压不一致性控制在8%以内。

DFIG暂态特性分析及联合HVRT控制策略

双馈感应风力发电机(DFIG)高电压穿越(HVRT)问题中,其故障响应等效于在原有的稳态响应基础上增加一个电压骤升分量,以此来分析HVRT的暂态特性;针对传统“灭磁”控制无法对T_(e)进行有效控制,且要求对ψs进行精确测量的不足,本文提出一种电流追踪控制策略实现DFIG的HVRT。在此基础上,依据随R_(r)的增加,ξ随之增加,且ξ越大,抑制DFIG振荡作用越明显,提出附加阻抗控制。DFIG联合控制策略结构简单,效果显著,克服了灭磁控制无法对T_(e)进行控制的弊端,且最小化了DFIG的脉动程度,实现了DFIG的广义故障穿越。

Effect of Temperature on I-V Characteristic for ZnO/CuO

Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60°C to 130°C step 10.

电网电压骤升故障时DFIG暂态电流特性研究

为研究双馈感应风力发电机(DFIG)在电网电压对称骤升和不对称骤升故障下的暂态电流特性,提高故障承受能力,详细分析了电网电压对称骤升和不对称骤升故障下DFIG的定子、转子磁链暂态过渡过程。在此基础上,推导出双馈风力发电机定子、转子暂态电流表达式,研究其故障电流特性。利用MATLAB/Simulink仿真平台对所得解析表达式与时域仿真结果进行比较,仿真波形与理论波形可以很好的吻合,验证了DFIG故障电流特性的正确性,为准确分析DFIG故障承受能力提供直接依据。

Energy gap suppression and excess current in Tl_2Ba_2CaCu_2O_8 intrinsic Josephson junctions

Intrinsic Josephson junctions in misaligned Tl2Ba2CaCu2O8 thin film were fabricated on LaAlO3 substrate. The temperature dependence of the critical current is investigated around liquid nitrogen temperature. In the current voltage characteristic, large voltage jump and lack of resistive branch are observed, which shows good consistency with the intrinsic Josephson junctions. By analyzing the large gap voltage in the curve, great suppression of the energy gap is found. Through discussing the temperature dependence of the gap voltage in liquid nitrogen temperature, it is shown that this phenomenon can be caused by the non-equilibrium quasiparticle injection. The temperature influence on the excess current also confirms the non-equilibrium effect.

Hybrid Multi-Infeed Interaction Factor Calculation Method Considering Voltage Regulation Control Characteristics of Voltage Source Converter

Voltage source converter based high voltage direct current(VSC-HVDC)can participate in voltage regulation by flexible control to help maintain the voltage stability of the power grid.In order to quantitatively evaluate its influence on the voltage interaction between VSC-HVDC and line commutated converter based high voltage direct current(LCC-HVDC),this paper proposes a hybrid multi-infeed interaction factor(HMIIF)calculation method considering the voltage regulation control characteristics of VSC-HVDC.Firstly,for a hybrid multi-infeed high voltage direct current system,an additional equivalent operating admittance matrix is constructed to characterize HVDC equipment characteristics under small disturbance.Secondly,based on the characteristic curve between the reactive power and the voltage of a certain VSC-HVDC project,the additional equivalent operating admittance of VSC-HVDC is derived.The additional equivalent operating admittance matrix calculation method is proposed.Thirdly,the equivalent bus impedance matrix is obtained by modifying the alternating current(AC)system admittance matrix with the additional equivalent operating admittance matrix.On this basis,the HMIIF calculation method based on the equivalent bus impedance ratio is proposed.Finally,the effectiveness of the proposed method is verified in a hybrid dual-infeed high voltage direct current system constructed in Power Systems Computer Aided Design(PSCAD),and the influence of voltage regulation control on HMIIF is analyzed.

光伏阵列I-V特性曲线测量误差分析与修正方法

光伏电站内光伏阵列的现场I-V测量可以评估当前系统发电性能和阵列状态,但现场的传输线路阻抗会使I-V测量产生误差,影响了评估的准确性,不利于光伏电站运维决策。该文分析测量线路阻抗和环境参数对常规动态电容I-V测量方法的影响机理,并进行仿真验证。根据误差影响机理和测量回路等效模型,提出一种双电容组合I-V特性测量方法,并研制样机进行实验验证。实验结果表明,该测量方法可有效消除线路分布参数对光伏阵列I-V测量的影响,提高测量精度。