Current–Voltage Characteristics of the Aziridine-Based Nano-Molecular Wires: a Light-Driven Molecular Switch

Using nonequilibrium Green＇s function formalism combined first-principles density functional theory, we analyze the transport properties of a 4,4-dimethyl-6-（4-nitrophenyl）-2-phenyl-3,5-diaza-bicyclo[3.1.0]hex-2-ene molecular optical switch. The title molecule can convert between closed and open forms by visible or ultraviolet irradiation. The I-V characteristics, differential conductance, on-off ratio, electronic transmission coefficients, spatial distribution of molecular projected self-consistent Hamiltonian orbitals, HOMO-LUMO gaps, effect of electrode materials Y（111）（Y =Au, Ag and Pt） on electronic transport and different molecular geometries corresponding to the closed and open forms through the molecular device are discussed in detail. Based on the results, as soon as possible the open form translates to the closed form, and there is a switch from the ON state to the OFF state（low resistance switches to high resistance）. Theoretical results show that the donor/acceptor substituent plays an important role in the electronic transport of molecular devices. The switching performance can be improved to some extent through suitable donor and acceptor substituents.

Hybrid Multi-Infeed Interaction Factor Calculation Method Considering Voltage Regulation Control Characteristics of Voltage Source Converter

Voltage source converter based high voltage direct current(VSC-HVDC)can participate in voltage regulation by flexible control to help maintain the voltage stability of the power grid.In order to quantitatively evaluate its influence on the voltage interaction between VSC-HVDC and line commutated converter based high voltage direct current(LCC-HVDC),this paper proposes a hybrid multi-infeed interaction factor(HMIIF)calculation method considering the voltage regulation control characteristics of VSC-HVDC.Firstly,for a hybrid multi-infeed high voltage direct current system,an additional equivalent operating admittance matrix is constructed to characterize HVDC equipment characteristics under small disturbance.Secondly,based on the characteristic curve between the reactive power and the voltage of a certain VSC-HVDC project,the additional equivalent operating admittance of VSC-HVDC is derived.The additional equivalent operating admittance matrix calculation method is proposed.Thirdly,the equivalent bus impedance matrix is obtained by modifying the alternating current(AC)system admittance matrix with the additional equivalent operating admittance matrix.On this basis,the HMIIF calculation method based on the equivalent bus impedance ratio is proposed.Finally,the effectiveness of the proposed method is verified in a hybrid dual-infeed high voltage direct current system constructed in Power Systems Computer Aided Design(PSCAD),and the influence of voltage regulation control on HMIIF is analyzed.

Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.

Characteristics and Temperature Measurement of a Non-Transferred Cascaded DC Plasma Torch

Dependence of the current-voltage characteristics of a non-transferred DC cascaded plasma torch used for nanoparticle synthesis, on the plasma current and the plasma argon gas flow rate are reported in this paper. The potential structure inside the torch and its dependence on the plasma current and gas flow rate are also investigated. The arc voltage is seen to exhibit negative characteristic for a current below 150 A and positive characteristic above that current value. The voltage drop near the electrodes is found to decrease with the increase in plasma current. 25~ of the total voltage is dropped near the cathode at a plasma current of 50 A and a argon plasma gas flow rate of 10 liter per minute （LPM）, and it decreases to 12% with the current increasing to 300 A, and to 17% with a gas flow rate of 25 LPM. The variation in the torch efficiency with the gas flow rate and plasma current is also reported. The efficiency of the torch is found to be between 36% and 48%. In addition, the plasma gas temperature at various positions of the reactor and for different currents and voltages are measured by calorimetric estimation with a heat balance technique.

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy （LPE） tech-nology. Scanning electron microscopy （SEM） images and X-ray diffraction （XRD） patterns showed the mirror smooth surface, flat interface, and good crystalline quality of the heterojunctions. Fourier transform infrared （FTIR） transmittance spectra exhibited that the cutoff wave-lengths of InAsSb epilayers reach 4.8 μm. The standard current-voltage （I-V） characteristics with a high differential-resistance-area-product at zero bias （R0A） of 1.02×10-1 Ωcm2 at room temperature indicate that the fine p-n junctions have been obtained.

Energy gap suppression and excess current in TI2Ba2CaCu208 intrinsic Josephson junctions

Intrinsic Josephson junctions in misaligned T12Ba2CaCu208 thin film were fabricated on LaA103 substrate. The temperature dependence of the critical current is investigated around liquid nitrogen temperature. In the current voltage characteristic, large voltage jump and lack of resistive branch are observed, which shows good consistency with the intrinsic Josephson junctions. By analyzing the large gap voltage in the curve, great suppression of the energy gap is found. Through discussing the temperature dependence of the gap voltage in liquid nitrogen temperature, it is shown that this phenomenon can be caused by the non-equilibrium quasiparticle injection. The temperature influence on the excess current also confirms the non-equilibrium effect.

Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.

Properties of intermediate-frequency vacuum arc in sinusoidal curved contact and butt contact

In this report,two new contact structures of a vacuum interrupter with a sinusoidal curved surface are proposed to improve the capability by increasing the surface area.The experimental investigation of vacuum arc at intermediate frequency(360-800 Hz)was conducted and the results were compared with a butt contact with the same contact diameter(41 mm)and the same material.By analyzing the arc behavior,arc voltage characteristics,arc energy,current interrupting capacity,ablation of the anode contact and condensation of the arc products at a 3 mm gap,the differences in their vacuum arc characteristics were determined.The correlations of their arc energy with the amplitude and the frequency of the current were also achieved.Analysis suggests that the ruled curved contact has strong application potentiality because of its low arc energy,low arc voltage noise and arc voltage peak,light ablation on the surface of the anode contact and high interrupting capacity.

Strain effect on graphene nanoribbon carrier statistic in the presence of non-parabolic band structure

The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon（AGNR） is investigated.In addition,the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically.It is found that the property of AGNR in the non-parabolic band region is varied by the strain.The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation.The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure,which varies the physical properties from its normality.The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain.

Energy gap suppression and excess current in Tl_2Ba_2CaCu_2O_8 intrinsic Josephson junctions

Intrinsic Josephson junctions in misaligned Tl2Ba2CaCu2O8 thin film were fabricated on LaAlO3 substrate. The temperature dependence of the critical current is investigated around liquid nitrogen temperature. In the current voltage characteristic, large voltage jump and lack of resistive branch are observed, which shows good consistency with the intrinsic Josephson junctions. By analyzing the large gap voltage in the curve, great suppression of the energy gap is found. Through discussing the temperature dependence of the gap voltage in liquid nitrogen temperature, it is shown that this phenomenon can be caused by the non-equilibrium quasiparticle injection. The temperature influence on the excess current also confirms the non-equilibrium effect.

Experimental Study of Electrodes Parameters Effects on Small Diffusion Combustion Flame

To study the configuration and conductivity effects on micro-scale methane-air flames by electric field and iron wind,different electric field forces and iron winds are generated by needle,circle and plate electrodes respectively in different electrodes heights under both AC and DC fields though experiments. Experimental results showed that the flame characteristics are affected by needle electrodes mainly through the action of ion wind,by plate type electrodes mainly through the action of electric field force and by annular electrodes through both the electric field force and ion wind at the same time. Under DC field 's effects of all electrodes types,the flame will consequently go down while the voltage reached to a limit value,and it will breakdown under the strong effect of the ion wind by needle electrodes. The results also showed the influence by different electrodes types to the current characteristics,resistance properties and configuration of themicro-scale flames.

Electric Heating Property from Butyl RubberLoaded Boron Carbide Composites

We researched the electric heating property from butyl rubber-loaded boron carbide composite. The effects of boron carbide content on bulk resistivity, voltage-current characteristic, thermal conductivity and thermal stability of boron carbide / butyl rubber （IIR） polymer composite were introduced. The analysis results indicated that the bulk resistivity decreased greatly with increasing boron carbide content, and when boron carbide content reached to 60%, the bulk resistivity achieved the minimum. Accordingly, electric heating behavior of the composite is strongly dependent on boron carbide content as well as applied voltage. The content of boron carbide was found to be effective in achieving high thermal conductivity in composite systems. The thermal conductivity of the composite material with added boron carbide was improved nearly 20 times than that of the pure IIR. The thermal stability test showed that, compared with pure IIR, the thermal stable time of composites was markedly extended, which indicated that the boron carbide can significantly improve the thermal stability of boron carbide / IIR composite.

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P^+N junction diode

This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.

How to build good inverters from nanomaterial-based transistors

As promising components of future integrated circuits(ICs),field-effect transistors(FETs)based on semiconducting nanomaterials are being extensively investigated.As the most essential component of ICs,inverters are favored to be demonstrated at the infant stage of emerging technologies.However,systematic research is absent to reveal how the parameters of transistors affect the performance of inverters,e.g.the voltage transfer characteristics(VTCs).In this work,systematic analysis about the dependency between transistor-and inverter-level metrics have been carried out for both complementary metal-oxide-semiconductor(CMOS)and monotype(p-type-only and n-type-only)technologies,which is further experimentally demonstrated by carbon nanotube FETs and ICs.We also propose guidelines towards the high noise margin and rail-to-rail inverter design based on nanomaterials.