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A Novel High-Voltage Detector Integrated into SPIC by Using FFLR 被引量:1
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作者 韩磊 叶星宁 陈星弼 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第10期1250-1254,共5页
A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.... A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required. 展开更多
关键词 FFLR high voltage detector voltage divider detector ring
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Performance enhancement of CMOS terahertz detector by drain current
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作者 张行行 纪小丽 +3 位作者 廖轶明 彭静宇 朱晨昕 闫锋 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期491-495,共5页
In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors(MOSFETs) both theoretically and experimentally. The analytical model, which is ... In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors(MOSFETs) both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power(NEP) with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection. 展开更多
关键词 drain current CMOS terahertz detectors voltage responsivity noise equivalent power
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Automated dual source systems for measurement of DC resistance standards
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作者 Rasha S M Ali M Helmy A Raouf 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2019年第2期109-115,共7页
A new system for measuring low-ohmic standard resistors through a dual current sources bridge is introduced.It is used for low resistance measurements from 1 mΩto 1Ωat 1∶1 ratio,which is suitable for the laboratori... A new system for measuring low-ohmic standard resistors through a dual current sources bridge is introduced.It is used for low resistance measurements from 1 mΩto 1Ωat 1∶1 ratio,which is suitable for the laboratories without cryogenic current comparators(CCC)or direct current comparators(DCC)bridges.Behavior of this bridge is evaluated by comparing its measured values with the unknown resistor values obtained by another method.The accuracy of the introduced bridge is in the level of 10-5 for the 1 mΩresistor,and in the level of 10-4 for the 10 mΩ,100 mΩand 1Ωresistors.Moreover,a dual voltage sources system for the measurement of DC standard resistors from 1 kΩto 100 MΩis also presented.In this system,a modification is made on the modified Wheatstone bridge to evaluate its performance by adding another digital multimeter to measure the ratio between the unknown and the standard resistors simultaneously.This bridge is verified by comparing the measured values of 10 kΩresistor obtained by the two methods with its actual value.The bridge accuracy is in the level of 10-6 except for the 1 kΩresistor,and the bridge asymmetry is also evaluated.It is found the asymmetry is in the level of 10-6 for the resistors from 10 kΩto 100 MΩand in the level of 10-5 for 1 kΩresistors.The introduced bridges operations are controlled by LabVIEW programs designed specially for this purpose,and the expanded uncertainty is also evaluated for all measurement results. 展开更多
关键词 direct current comparators voltage null detector modified Wheatstone bridge ratio technique resistance measurements UNCERTAINTY
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