Influence of Negative Bias Voltage on the Mechanical and Tribological Properties of MoS_2/Zr Composite Films

MoS2/Zr composite films were deposited on the cemented carbide YT14 （WC＋14%TiC＋6%Co） by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques.The influence of negative bias voltage on the composite film properties,including adhesion strength,micro-hardness,thickness and tribological properties were investigated.The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films.The effects of negative bias voltage on film properties were also put forward.The optimal negative bias voltage was -200 V under this experiment conditions.The obtained composite films were dense,the adhesion strength was about 60 N,the thickness was about 2.4 μm,and the micro-hardness was about 9.0 GPa.The friction coefficient and wear rate was 0.12 and 2.1×10-7 cm3/N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev·min-1.

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ＋2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant（ε＂）, dielectric loss（ε＂）, loss tangent（tan δ）, the real and imaginary parts of electric modulus（M and M）, and alternating current（AC） electrical conductivity（σ） are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.

Influence of bias voltage on structure,mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films

Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering.The influence of substrate biases on structure,mechanical and corrosion properties of the deposited films was studied using X-ray diffraction,field emission scanning electron microscopy,nanoindentation and electrochemical techniques.The deposited films have a columnar structure,and their preferential orientation strongly depends on bias voltage.The preferential orientations change from（200）plane at low bias to（111）plane at moderate bias and then to（220）plane at relatively high bias.Nanohardness H,elastic modulus E,H/E＊and H3/E＊2 ratios,and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage.All the best values appear at bias of-120 V,attributing to the film with a fine,compact and less defective structure.This demonstrates that there is a close relation among microstructure,mechanical and corrosion properties of the TiN films,and the film with the best mechanical property can also provide the most effective corrosion protection.

Axial electric wake field inside the induction gap exited by the intense electron beam

While an intense electron beam passes through the accelerating gaps of a linear induction accelerator, a strong wake field will be excited. In this paper a relatively simple model is established based on the interaction between the transverse magnetic wake field and the electron beam, and the numerical calculation in succession generates a magnetic wake field distribution along the accelerator and along the beam pulse as well. The axial electric wake field is derived based on the relation between field components of a resonant mode. According to some principles in existence, the influence of this field on the high voltage properties of the induction gap is analyzed. The Dragon-I accelerator is taken as an example, and its maximum electric wake field is about 17 kV/cm, which means the effect of the wake field is noticeable.