The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the ...The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.展开更多
基金supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836009)the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025)
文摘The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.
