In order to effectively and quickly clean the surface of semiconductor silicon wafers, the fluid flow is one of the significant issues. For a batch-type silicon wafer wet cleaning bath, a slim water injection nozzle c...In order to effectively and quickly clean the surface of semiconductor silicon wafers, the fluid flow is one of the significant issues. For a batch-type silicon wafer wet cleaning bath, a slim water injection nozzle consisting of a dual tube was studied, based on theoretical calculations and experiments. A thin inner tube was placed at the optimum position in the water injection nozzle. Such a simple design could make the water injection direction normal and the water velocity profile symmetrical along the nozzle. The water flow in the wet cleaning bath was observed using a blue-colored ink tracer. When the nozzle developed in this study was placed at the bottom of the bath, a fast and symmetrical upward water stream was formed between and around the wafers.展开更多
GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）...GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）.The samples are activated by Cs/O after the same annealing process.X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows：sample 1 has the largest proportion of Ga,N,and O among the three samples,while its C content is the lowest.After activation the quantum efficiency curves show sample 1 has the best photocathode performance.We think the wet chemical cleaning method is a process which will mainly remove C contamination.展开更多
文摘In order to effectively and quickly clean the surface of semiconductor silicon wafers, the fluid flow is one of the significant issues. For a batch-type silicon wafer wet cleaning bath, a slim water injection nozzle consisting of a dual tube was studied, based on theoretical calculations and experiments. A thin inner tube was placed at the optimum position in the water injection nozzle. Such a simple design could make the water injection direction normal and the water velocity profile symmetrical along the nozzle. The water flow in the wet cleaning bath was observed using a blue-colored ink tracer. When the nozzle developed in this study was placed at the bottom of the bath, a fast and symmetrical upward water stream was formed between and around the wafers.
基金Projects supported by the National Natural Science Foundation of China (Grant No. 60871012)the National Key Laboratory of Science and Technology Foundation on Low Light Level Night Vision (Grant No. J20110104)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11 0238)
文摘GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）.The samples are activated by Cs/O after the same annealing process.X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows：sample 1 has the largest proportion of Ga,N,and O among the three samples,while its C content is the lowest.After activation the quantum efficiency curves show sample 1 has the best photocathode performance.We think the wet chemical cleaning method is a process which will mainly remove C contamination.
