The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rota...The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.展开更多
Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and functionality in electronic devices.From its early iterations to the advanced variants of today,this field has...Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and functionality in electronic devices.From its early iterations to the advanced variants of today,this field has undergone an extraordinary evolution.As the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal qualities.Consequently,conducting a range of characterization tests on the crystals has become necessary.This paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis.Finally,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.展开更多
文摘The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.
基金This work was supported by Youth Innovation Promotion Association CAS,National Natural Science Foundation of China(Grant No.11705263)Shanghai Rising-Star Program(Grant No.21QA1410900)。
文摘Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and functionality in electronic devices.From its early iterations to the advanced variants of today,this field has undergone an extraordinary evolution.As the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal qualities.Consequently,conducting a range of characterization tests on the crystals has become necessary.This paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis.Finally,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.
