Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices

Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.

Isolation Enhancement in a Compact Four-Element MIMO Antenna for Ultra-Wideband Applications

Mutual coupling reduction or isolation enhancement in antenna arrays is an important area of research as it severely affects the performance of an antenna.In this paper,a new type of compact and highly isolated Multiple-Input-Multiple-Output(MIMO)antenna for ultra-wideband(UWB)applications is presented.The design consists of four radiators that are orthogonally positioned and confined to a compact 40×40×0.8 mm3 space.The final antenna design uses an inverted L shape partial ground to produce an acceptable reflection coefficient(S11<−10 dB)in an entire UWB band(3.1–10.6)giga hertz(GHz).Moreover,the inter-element isolation has also been enhanced to>20 db for majority of the UWB band.The antenna was fabricated and tested with the vector network analyzer(VNA)and in an anechoic chamber for scattering parameters and radiation patterns.Furthermore,different MIMO diversity performance metrics are also measured to validate the proposed model.The simulation results and the experimental results from the constructed model agree quite well.The proposed antenna is compared with similar designs in recently published literature for various performance metrics.Because of its low envelope correlation coefficient(ECC<0.1),high diversity gain(DG>9.99 dB),peak gain of 4.6 dB,reduced channel capacity loss(CCL<0.4 b/s/Hz),and average radiation efficiency of over 85%,the proposed MIMO antenna is ideally suited for practical UWB applications.

Advanced Aircraft Power Electronics Systems- the impact of simulation, standards and wide band-gap devices

The rapid pace of change in the wide band gap(WBG)power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.The applications include automotive,aerospace and traction applications,as well as grid related or charging systems,with the potential to provide paradigm shifts in performance and efficiency over Silicon devices in current use today.Despite these exciting developments,however,there are still many outstanding challenges for both researchers and industry to solve before WBG technology becomes pervasive.In this paper we will explore some of these challenges and highlight the strengths of WBG devices,some of the specific issues for machine drives and develop some potential solutions for future developments in power electronics.

Improved Adaptive Iterated Extended Kalman Filter for GNSS/INS/UWB-Integrated Fixed-Point Positioning

To provide stable and accurate position information of control points in a complex coastal environment,an adaptive iterated extended Kalman filter(AIEKF)for fixed-point positioning integrating global navigation satellite system,inertial navigation system,and ultra wide band(UWB)is proposed.In thismethod,the switched global navigation satellite system(GNSS)and UWB measurement are used as the measurement of the proposed filter.For the data fusion filter,the expectation-maximization(EM)based IEKF is used as the forward filter,then,the Rauch-Tung-Striebel smoother for IEKF filter’s result smoothing.Tests illustrate that the proposed AIEKF is able to provide an accurate estimation.

Multifunctional polarization converter based on multilayer reconfigurable metasurface

In the modern wireless communication system,the manipulation for polarization of electromagnetic wave plays a important role in improving the capacity and reliability of communication.In this paper,a multifunctional polarization converter(MFPC)based on the multilayer reconfigurable metasurface is proposed,which can assist the source antenna to transmit and receive multiple polarization signals.The MFPC consists of a grating which can filter out the undesired polarization and four layers of metasurfaces incorporated with PIN diodes.The functions of the MFPC include LTC and LTL polarization conversions,co-polarization transmission and reflection for arbitrary polarization.By changing the states of PIN diodes,the functions of MFPC can be dynamically switched.Loaded on the aperture of source antenna,the proposed MFPC can serve as a transmissive array with multiple polarization channels,and can also provide EM protection for source antenna by reflecting the incoming interference waves.Cascading of the metasurfaces produces Fabry-Perot resonance in the MFPC,and it contributes to the realization of LTC and LTL polarization conversions.To verify the performance of the proposed MFPC,the prototype is fabricated and tested.The measured results show that the fractional bandwidths of four functions are all higher than 31.9% with transmission or reflection coefficients higher than-2 d B.The frequency band of each function is mainly concentrated in S-band.The measured data are in agreement with the simulated results.

Luminescence and Preparation of LED Phosphor Ca_8Mg(SiO_4)_4Cl_2∶Eu^(2+)

Calcium magnesium chlorosilicate doped by europium, Ca8Mg（SiO4）4Cl2： Eu^2＋, was prepared by the solid state reaction at high temperature. The compound obtained is pure Ca8Mg（SiO4）4Cl2 phase with cubic structure. Its average particle size is 5 μm, and it has good dispersity and morphological form. The excitation spectrum of Ca8Mg（SiO4）4Cl2： Eu^2＋ is a wide band, which covers from 270 to 480 nm. The emission spectrum is also a wide band peaked at 510 nm. The luminescent intensity reaches to the maximum when the concentration of Eu^2 ＋ is 2%. The wavelength of emission and excitation of the phosphor with various Eu^2 ＋ contents keeps constant. This spectrum range matches violet and blue LED chips very well, and its strong luminescence intensity is suitable for a green phosphor of tricolor phosphor of white light LED.

A modified lumped parameter model of distribution transformer winding

The modelling of the distribution transformer winding is the starting point and serves as important basis for the transformer characteristics analysis and the lightning pulse response prediction.A distributed parameters model can depict the winding characteristics accurately,but it requires complex calculations.Lumped parameter model requires less calculations,but its applicable frequency range is not wide.This paper studies the amplitude-frequency characteristics of the lightning wave,compares the transformer modelling methods and finally proposes a modified lumped parameter model,based on the above comparison.The proposed model minimizes the errors provoked by the lumped parameter approximation,and the hyperbolic functions of the distributed parameter model.By this modification it becomes possible to accurately describe the winding characteristics and rapidly obtain the node voltage response.The proposed model can provide theoretical and experimental support to lightning protection of the distribution transformer.

Novel Compact UWB Band Notch Antenna Design for Body-Centric Communications

This research analyzes and implements an innovative and tiny ultrawideband(UWB)antenna with band-notched features for body-centric communication.The shape of the designed antenna looks like a‘swan’with a slotted patch.Computer Simulation Technology(CST)is used to assess and investigate the performance of this antenna.With a band notch,this antenna can prevent interference from Wireless Local Area Network(WLAN)(5.15–5.825 GHz)and Worldwide Interoperability for Microwave Access(WiMAX)(5.25–5.85 GHz)systems.At first,the performance parameters like return loss response,gain,radiation patterns,and radiation efficiency of this UWB antenna are evaluated.After that,the human body effects on the antenna performance of the antenna are also examined to place the antenna at various distances away from 3-layers of phantom body model at different frequencies.All the on-body performance parameter results are compared and analyzed with free space performance parameter results.Lastly,by changing patch slot length and ground plane length,parametric studies were done for performance comparison.According to this research,it is noticed that the antenna is tiny and new.It shows good performance in body case as well.Hence,the antenna is very suitable for healthcare applications.

First-principles investigation of the valley and electrical properties of carbon-dopedα-graphyne-like BN sheet

Based on ab initio density functional theory calculations,we demonstrate that two carbon-doped boron nitride analog ofα-graphyne structures,B_(3) C_(2) N_(3)) and BC_(6) N monolayers,are two-dimensional direct wide band gap semiconductors,and there are two inequivalent valleys in the vicinities of the vertices of their hexagonal Brillouin zones.Besides,B_(3)C_(2)N_(3) and BC_(6)N monolayers exhibit relatively high carrier mobilities,and their direct band gap feature is robust against the biaxial strain.More importantly,the energetically most favorable B_(3)C_(2)N_(3) and BC_(6)N bilayers also have direct wide band gaps,and valley polarization could be achieved by optical helicity.Finally,we show that BC_(6) N monolayer might have high efficiency in photo-splitting reactions of water,and a vertical van der Waals heterostructure with a type-Ⅱenergy band alignment could be designed using B_(3)C_(2)N_(3)and BC_(6)N monolayers.All the above-mentioned characteristics make B_(3)C_(2)N_(3) and BC_(6)N monolayers,bilayers,and their heterostructures recommendable candidates for applications in valleytronic devices,metal-free photocatalysts,and photovoltaic cells.

Range-Only UWB SLAM for Indoor Robot Localization Employing Multi-Interval EFIR Rauch-Tung-Striebel Smoother

For improving the localization accuracy,a multi-interval extended finite impulse response(EFIR)-based Rauch-Tung-Striebel(R-T-S)smoother is proposed for the range-only ultra wide band(UWB)simultaneous localization and mapping(SLAM)for robot localization.In this mode,the EFIR R-T-S(ERTS)smoother employs EFIR filter as the forward filter and the R-T-S smoothing method to smooth the EFIR filter’s output.When the east or the north position is considered as stance,the ERTS is used to smooth the position directly.Moreover,the estimation of the UWB Reference Nodes’(RNs’)position is smoothed by the R-T-S smooth method in parallel.The test illustrates that the proposedmulti-interval ERTS smoothing for range-only UWB SLAMis able to provide accurate estimation.Compared with the EFIR filter,the proposed method improves the localization accuracy by about 25.35%and 40.66%in east and north directions,respectively.

SAGE-based algorithm for DOA estimation and array calibration in the presence of sensor location errors

The direction of arrival(DOA) estimation problem in the presence of sensor location errors is studied and an algorithm based on space alternating generalized expectation-maximization(SAGE) is presented. First, the narrowband case is considered.Based on the small perturbation assumption, this paper proposes an augmentation scheme so as to estimate DOA and perturbation parameters. The E-step and M-step of the SAGE algorithm in this case are derived. Then, the algorithm is extended to the wideband case. The wideband SAGE algorithm is derived in frequency domain by jointing all frequency bins. Simulation results show that the algorithm achieves good convergence and high parameter estimation precision.

UWB Positioning System Based on Genetic Algorithm

In order to enhance the positioning accuracy, a UWB positioning system based on genetic algorithm is proposed. Firstly, it uses the DW1000 module to measure the distance, and preprocesses the measured data to remove noise. Then, a positioning equation is established according to the processed distance information, and the genetic algorithm is used to solve the equation to obtain the coordinates of the unknown node. The experimental results show that the measured positioning accuracy is within 30 cm, which means that the system can obtain a good positioning effect and meet the need for precise positioning.

Atomic and electronic structures of p-type dopants in 4H-SiC

Using hybrid density functional calculation,we study the atomic and electronic structures of p-type dopants,B,Al and Ga,in 4H-SiC.For B,depending on the growth condition,it can occupy both Si and C sites.In contrast,Al and Ga on the C sites exhibit too high formation energy to exist in a significant amount.In 4H-SiC,there exist two types of Si sites in wurtzite-like and zincblende-like local coordination,respectively.Our calculations suggest that the dopant atoms have negligible preference occupying the two sites.In neutral charge state,all the dopants exhibit significant distortions from the structure in the negatively charged state.For most cases,our calculations yield three distorted structures,in which the most stable one has the dopant atom displaced along its bond with one of the surrounding equatorial Si or C atoms,lowering the C_(3v) symmetry to C_(s) symmetry(i.e.,a mirror symmetry only).Among the three dopant elements,Al on Si sites exhibits overall the lowest formation energy and the shallowest acceptor level.Nevertheless,it is not a hydrogenic dopant with the acceptor level 0.12 eV above the valence band maximum based on calculation using a 400-atom supercell.Its corresponding defect state exhibits apparent localization along the[0001]direction,but it is relatively delocalized in the(0001)plane.

Mechanism analysis of radiation generated by the beam-plasma interaction in a vacuum diode

When we were studying the vacuum switch,we found that the vacuum diode can radiate a broadband microwave.The vacuum diode is comprised of a cathode with a trigger device and planar anode,there is not a metallic bellows waveguide structure in this device,so the radiation mechanism of the vacuum diode is different from the plasma filled microwave device.It is hard to completely imitate the theory of the plasma filled microwave device.This paper analyzes the breakdown process of the vacuum diode,establishes the mathematical model of the radiating microwave from the vacuum diode.Based on the analysis of the dispersion relation in the form of a refractive index,the electromagnetic waves generated in the vacuum diode will resonate.The included angle between the direction of the electromagnetic radiation and the initial motion direction of electron beam is 45 degrees.The paper isolates the electrostatic effect from the beam-plasma interaction when the electromagnetic radiation occurs.According to above analyses,the dispersion relations of radiation are obtained by solving the wave equation.The dispersion curves are also obtained based on the theoretical dispersion relations.The theoretical dispersion curves are consistent with the actual measurement time-frequency maps of the radiation.Theoretical deduction and experiments indicate that the reason for microwave radiating from the vacuum diode can be well explained by the interaction of the electron beam and magnetized plasma.

High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide

Electrically pumped high power terahertz （THz） emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12 THz （20 meV and 50 meV） that were attributed to radiative transitions of excitons bound to nitrogen donor impurities. Due to the relatively deep binding energies of the nitrogen donors, above 100 meV, and the high thermal conductivity of the SiC substrates, the THz output power and operating temperature were significantly higher than previous dopant based emitters. With peak applied currents of a few amperes, and a top surface area of 1 mm2, the device emitted up to 0.5 mW at liquid nitrogen temperature （77 K）, and tens of microwatts up to 333 K. This result is the highest temperature of THz emission reported from impurity-based emitters.

A Directional Differential-Fed UWB Antenna with Stable Radiation Pattern

A directional ultra-wideband(UWB)antenna with improved radiation patterns is presented.The proposed sheme comprises a differential-fed microstrip antenna and a rectangular cavity.The hexagon-shaped slot and four triangle-cut corners on the ground plane of the planar antenna are used to improve the impedance matching within the UWB frequency range.A rectangular cavity is used as the reflector for the planar microstrip antenna,so as to achieve directed radiation.The measured results indicate that the designed antenna exhibits a stable broadside directional radiation patterns within the entire operating frequency band.Furthermore,thanks to the differentially driven technique,the cross-polarization is greatly decreased and the polarization purity is maintained in a high level.

FIXED-POINT BLIND ADAPTIVE MULTIUSER DETECTION ALGORITHM FOR IR UWB SYSTEMS IN MULTIPATH CHANNEL

Using the hypothesis that data transmitted by different users are statistically independent of each other,this paper proposes a fixed-point blind adaptive multiuser detection algorithm for Time-Hopping (TH) Impulse Radio (IR) Ultra Wide Band (UWB) systems in multipath channel,which is based on Independent Component Analysis (ICA) idea. The proposed algorithm employs maximizing negentropy criterion to separate the data packets of different users. Then the user characteristic se-quences are utilized to identify the data packet order of the desired user. This algorithm only needs the desired user’s characteristic sequence instead of channel information,power information and time-hoping code of any user. Due to using hypothesis of statistical independence among users,the proposed algorithm has the outstanding Bit Error Rate (BER) performance and the excellent ability of near-far resistance. Simulation results demonstrate that this algorithm has the performance close to that of Maximum-Likelihood (ML) algorithm and is a suboptimum blind adaptive multiuser detection algorithm of excellent near-far resistance and low complexity.

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn_3N_2 precursors

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper,we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

A Novel Bow-Tie Antenna with Triple Band-Notched Characteristics for UWB Applications

This paper presents the design of a compact bow-tie antenna with triple band notched characteristics for UWB applications. The proposed antenna can operate from 3.1 to 10.6 GHz with VSWR - 8.4 GHz) centered at 8.1 GHz, the CSRR2 rejects the WLAN band (5.15 - 5.85 GHz) centered at 5.6 GHz, and the CSRR3 rejects the band (4.10 - 4.47 GHz) centered at 4.32 GHz. Compared with recent design, this antenna is more compact, and presents better simulation results of its characteristics. Our newly designed antenna is a potential candidate for application in UWB communication systems.

Wide Band Gap Non-Fullerene Small Molecular Acceptors Containing Spirobifluorene and Benzotriazole with Three Different End-Capped Groups for P3HT-Based Organic Solar Cells

Spirofluorene （SF） and benzo[d][1,2,3]triazole （BTA） have been considered as promising building blocks to construct n-type photovoltaic materials. Herein, three new small molecule acceptors （SMAs） named BTA21, BTA23 and BTA27 with the structure of A2=A1-D-AI^A2 have been designed, in which SF and BTA were used as a central unit of D and bridged acceptor unit of A1, respectively. In addition, 3-ethylrhodanine, 2-（3-ethyl-4-oxothiazolidin-2-ylidene）malononitrile and malononitrile were chosen as terminal acceptor units to modulate the properties of the final SMAs. Three SMAs show wide optical band gaps （Eg） of 2.19, 2.15 and 2.22 eV, respectively, with gradually down-shift of the lowest unoccupied molecular orbital {LUMO） levels in the order of BTAZl, BTA23 and BTA27 depending on the electron-withdrawing capability of terminal acceptor units. BTA21 shows great advantages with respect to donor poly（3-hexylthiophene） （P3HT） over BTA23 and BTA27, such as well energy-level matching, complementary absorption and proper morpholgy, Concequently, P3HT：BTA21 shows the best power conversion efficiency （PCE） value of 3.28% with an open-circuit voltage （Voc） of 1.02 V, a short-circuit current （Jsc） of 5.45 mA.cm-2 and a fill factor （FF） of 0.59. These results indicate that the terminal acceptor group end-capped in SMAs plays a significant role in controlling their optical, electronic, and photovoltaic properties.