This paper presents a novel adaptive-bandwidth charge pump PLL with low jitter and a wide tuning range. With an adaptive bandwidth,the proposed PLL can scale its loop dynamics proportional to the output frequency and ...This paper presents a novel adaptive-bandwidth charge pump PLL with low jitter and a wide tuning range. With an adaptive bandwidth,the proposed PLL can scale its loop dynamics proportional to the output frequency and maintain optimal performance over its entire output range. In order to improve the jitter performance of the PLL,a matching tech- nique is employed in the charge pump,and a voltage-to-voltage converter is used to achieve a low gain VCO. The experimental chip was fabricated in a 0. 35μm CMOS process. The measured results show that the PLL has perfect jitter performance within its operating range from 200MHz to 1.1GHz.展开更多
We present a design for an adaptive gain phase-locked loop (PLL) that features fast acquisition,low jitter,and wide tuning range. A dual-edge-triggered phase frequency detector (PFD) and a self-regulated voltage c...We present a design for an adaptive gain phase-locked loop (PLL) that features fast acquisition,low jitter,and wide tuning range. A dual-edge-triggered phase frequency detector (PFD) and a self-regulated voltage controlled oscillator (VCO) are employed in this design to realize the aforementioned properties. Measured results show that the experimental chip, implemented in a standard 0.5μm 5V CMOS logic process, has an acquisition time of about 150ns at 37% frequency variation and an output RMS jitter of 39ps at 640MHz.(dual-edge-triggered phase frequency detector)展开更多
A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs hetero- junction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitt...A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs hetero- junction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.展开更多
The design of a digitally-tunable sixth-order reconfigurable OTA-C filter in a 0.18-μm RFCMOS process is proposed.The filter can be configured as a complex band pass filter or two real low pass filters.An improved di...The design of a digitally-tunable sixth-order reconfigurable OTA-C filter in a 0.18-μm RFCMOS process is proposed.The filter can be configured as a complex band pass filter or two real low pass filters.An improved digital automatic frequency tuning scheme based on the voltage controlled oscillator technique is adopted to compensate for process variations.An extended tuning range(above 8:1) is obtained by using widely continuously tunable transconductors based on digital techniques.In the complex band pass mode,the bandwidth can be tuned from 3 to 24 MHz and the center frequency from 3 to 16 MHz.展开更多
A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB la...A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.展开更多
The optoelectronic performance of quantum cascade detectors(QCDs)is highly sensitive to the design of the energy level structure,leading to the inability of a single structure to achieve broad wavelength tuning.To add...The optoelectronic performance of quantum cascade detectors(QCDs)is highly sensitive to the design of the energy level structure,leading to the inability of a single structure to achieve broad wavelength tuning.To address this issue,we propose and demonstrate a modular concept for very long wave infrared(VLWIR)QCDs based on a miniband diagonal transition scheme.The modular design makes the wavelength tuning only need to be adjusted for the absorption quantum well module rather than for the whole active region.Theoretical simulation shows that the wavelength tuning range is 39.6 meV(~14–30μm).To prove the feasibility of the scheme,three samples with different absorption well widths were fabricated and characterized.At 10 K,the response wavelengths of the three QCDs are 14,16,and 18μm,respectively,corresponding to responsivities and detectivities exceeding 2 mA/W and 1×10^(10)Jones.展开更多
文摘This paper presents a novel adaptive-bandwidth charge pump PLL with low jitter and a wide tuning range. With an adaptive bandwidth,the proposed PLL can scale its loop dynamics proportional to the output frequency and maintain optimal performance over its entire output range. In order to improve the jitter performance of the PLL,a matching tech- nique is employed in the charge pump,and a voltage-to-voltage converter is used to achieve a low gain VCO. The experimental chip was fabricated in a 0. 35μm CMOS process. The measured results show that the PLL has perfect jitter performance within its operating range from 200MHz to 1.1GHz.
文摘We present a design for an adaptive gain phase-locked loop (PLL) that features fast acquisition,low jitter,and wide tuning range. A dual-edge-triggered phase frequency detector (PFD) and a self-regulated voltage controlled oscillator (VCO) are employed in this design to realize the aforementioned properties. Measured results show that the experimental chip, implemented in a standard 0.5μm 5V CMOS logic process, has an acquisition time of about 150ns at 37% frequency variation and an output RMS jitter of 39ps at 640MHz.(dual-edge-triggered phase frequency detector)
基金Project supported by the National Basic Research Program of China(No.2010CBxxxx05)the Advance Research Project of China(No.51308xxxx06)+2 种基金the Advance Research Foundation of China(No.9140A08xxxx11DZ111)Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011)the Foundation of He’nan Educational Commettee(No.15A510001)
文摘A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs hetero- junction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
基金supported by the National High Technology Research and Development Program of China(No.2007AA12Z344)
文摘The design of a digitally-tunable sixth-order reconfigurable OTA-C filter in a 0.18-μm RFCMOS process is proposed.The filter can be configured as a complex band pass filter or two real low pass filters.An improved digital automatic frequency tuning scheme based on the voltage controlled oscillator technique is adopted to compensate for process variations.An extended tuning range(above 8:1) is obtained by using widely continuously tunable transconductors based on digital techniques.In the complex band pass mode,the bandwidth can be tuned from 3 to 24 MHz and the center frequency from 3 to 16 MHz.
基金supported by the Chinese National Key Basic Research Special Fund(Nos.2017YFA0206401,2018YFA0704402,2018YFB2201801,and 2018YFE0201200)National Key Research and Development Program of China(No.2020YFB2205800)+2 种基金National Natural Science Foundation of China(Nos.61975075,61975076,and 62004094)Natural Science Foundation of Jiangsu Province(No.BK20200334)Jiangsu Science and Technology Project(No.BE2017003-2).
文摘A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.
基金supported by the National Natural Science Foundation of China(Nos.61835011,62335015,12393830,62222408,and 12274404)the Key Program of the Chinese Academy of Sciences(No.XDB43000000)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2022112)。
文摘The optoelectronic performance of quantum cascade detectors(QCDs)is highly sensitive to the design of the energy level structure,leading to the inability of a single structure to achieve broad wavelength tuning.To address this issue,we propose and demonstrate a modular concept for very long wave infrared(VLWIR)QCDs based on a miniband diagonal transition scheme.The modular design makes the wavelength tuning only need to be adjusted for the absorption quantum well module rather than for the whole active region.Theoretical simulation shows that the wavelength tuning range is 39.6 meV(~14–30μm).To prove the feasibility of the scheme,three samples with different absorption well widths were fabricated and characterized.At 10 K,the response wavelengths of the three QCDs are 14,16,and 18μm,respectively,corresponding to responsivities and detectivities exceeding 2 mA/W and 1×10^(10)Jones.