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Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond
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作者 Wei Zhao Zongwei Xu +1 位作者 Pengfei Wang Hanyi Chen 《Nanotechnology and Precision Engineering》 EI CAS CSCD 2024年第3期71-78,共8页
Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition... Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition.However,there is a lack of studies of the yield of NV color centers at the atomic scale.In the molecular dynamics simulations described in this paper,NV color centers are pre-pared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing.The differences between the yields of NV color centers produced by implantation of carbon(C)and nitrogen(N)ions,respectively,are investigated.It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy.The effects of different pre-doping concentrations(400–1500 ppm)and implantation energies(1.0–3.0 keV)on the NV color center yield are analyzed,and it is shown that a pre-doping concentra-tion of 1000 ppm with 2 keV C-ion implantation can produce a 13%yield of NV color centers after 1600 K annealing for 7.4 ns.Finally,a brief comparison of the NV color center identification methods is presented,and it is found that the error rate of an analysis utiliz-ing the identify diamond structure coordination analysis method is reduced by about 7%compared with conventional identification+methods. 展开更多
关键词 NV color center Ion implantation Molecular dynamics(MD)simulation yield enhancement
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Missing Via Mechanism and Solutions
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作者 赵宇航 朱骏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1048-1051,共4页
Missing via has been a defect in semiconductor manufacturing,especially of foundries. Its solution can be rather attractive in yield improvement for relatively mature technology since each percentage point improvement... Missing via has been a defect in semiconductor manufacturing,especially of foundries. Its solution can be rather attractive in yield improvement for relatively mature technology since each percentage point improvement will mean significant profit margin enhancement. However, the root cause for the missing via defect is not easy to determine since many factors,such as, defocus, material re-deposition, and inadequate development,can lead to missing via defects. Therefore, knowing the exact cause for each defect type is the key. In this paper, we will present the analysis methodology used in our company. In the experiments,we have observed three types of missing vias. The first type consists of large areas, usually circular,of missing patterns,which are primarily located near the wafer edge. The second type consists of isolated sites with single partially opened vias or completely unopened vias. The third type consists of relatively small circular areas,within which the entire via pattern is missing. We have first tried the optimization of the developing recipe and found that the first type of missing via can be largely removed through the tuning of the rinse process, which improves the cleaning efficiency of the developing residue. However, this method does not remove missing via of the second and third type. We found that the second type of missing via is related to local defocus caused by topographical distribution. To resolve the third type of missing via defects, we have performed extensive experiments with different types of developer nozzles and different types of photomasks,and the result is that we have not found any distinct dependence of the defect density on either the nozzle or the mask types. Moreover, we have also studied the defect density from three resists with different resolution capability and found a correlation between the defect density and the resist resolution. It seems that,in general, lower resolution resists also have lower defect density. The results will be presented in the paper. 展开更多
关键词 missing via DEFECT yield enhancement photo resist PHOTOLITHOGRAPHY
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Analysis of Precipitation Resource and Weather Modification Potential in Anyang
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作者 Ma Jing 《Meteorological and Environmental Research》 CAS 2016年第2期12-14,共3页
Using ground water vapor pressure and precipitation data at four times of one day during 1985- 2014 in each county( city) of Anyang,precipitable water at each station was calculated,and temporal-spatial distribution... Using ground water vapor pressure and precipitation data at four times of one day during 1985- 2014 in each county( city) of Anyang,precipitable water at each station was calculated,and temporal-spatial distribution of atmospheric maximum precipitable water and its change trend over the years in the city were analyzed. Results showed that atmospheric maximum precipitable water in Anyang City had the characteristics of summer far more than winter,autumn slightly higher than spring,west and south more,and east and north less,and presented the increasing trend year by year. We further analyzed the characteristic of monthly rainfall enhancement potential in each county,and mean in whole year was 80%. In spring and winter,rainfall enhancement potential in the west was bigger than east,while rainfall enhancement potential in the east was bigger than west in summer and autumn. The research provides reference basis for rationally carrying out artificial rainfall work,which could effectively ease uneven temporal-spatial distribution problem of water resource in Anyang City. 展开更多
关键词 Water vapor pressure Atmospheric precipitable water Natural precipitation yield ratio Rainfall enhancement potential China
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A robust synthesis route of confined carbyne
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作者 Yanghao Feng Wendi Zhang +5 位作者 Kunpeng Tang Yingzhi Chen Jiou Zhang Kecheng Cao Weili Cui Lei Shi 《Nano Research》 SCIE EI CSCD 2024年第7期6274-6280,共7页
The unique mechanical,optical,and electrical properties of carbyne,a one-dimensional allotrope of carbon,make it a highly promising material for various applications.It has been demonstrated that carbon nanotubes(CNTs... The unique mechanical,optical,and electrical properties of carbyne,a one-dimensional allotrope of carbon,make it a highly promising material for various applications.It has been demonstrated that carbon nanotubes(CNTs)can serve as an ideal host for the formation of confined carbyne(CC),with the yield being influenced by the quality of the carbon nanotubes for confinement and the carbon source for carbyne growth.In this study,a robust synthesis route of CC within CNTs is proposed.C70 was utilized as a precursor to provide an additional carbon source,based on its ability to supply more carbon atoms than C60 at the same filling ratio.Multi-step transformation processes,including defect creation,were designed to enhance the yield of CC.As a result,the yield of CC was significantly increased for the C70 encapsulated single-walled CNTs by more than an order of magnitude than the empty counterparts,which also surpasses that of the double-walled CNTs,making it the most effective route for synthesizing CC.These findings highlight the importance of the additional carbon source and the optimal pathway for CC formation,offering valuable insights for the application of materials with high yield. 展开更多
关键词 confined carbyne yield enhancement carbon nanotube C70 encapsulation defect introduction Raman spectroscopy
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Highly efficient solid-state luminescence of carbonized polymer dots without matrix
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作者 Rui Li Junjun Liu +3 位作者 Chunlei Xia Tanglue Feng Zhicheng Zhu Bai Yang 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第6期412-416,共5页
Development of high-performance solid state luminescent carbon-based nanomaterials remains challenging.Here,strong blue-green fluorescent carbonized polymer dots(CPDs)from o-aminobenzenethiol and thiosalicylic acid(o ... Development of high-performance solid state luminescent carbon-based nanomaterials remains challenging.Here,strong blue-green fluorescent carbonized polymer dots(CPDs)from o-aminobenzenethiol and thiosalicylic acid(o ABT-TSA-CPDs)with an absolute photoluminescence quantum yield(PLQY)of 76%in solid state without matrix were synthesized.Through adjusting the reaction temperature and time,the PL centers were proved to be carbon core state and surface state associated to carbonyl group which was the source of strong fluorescence emission in solid state.The mechanism of the unique phenomenon of enhanced emission from ethanol solution(PLQY=7%)to powder(PLQY=76%)was investigated by analyzing the chemical properties and structures of o ABT-TSA-CPDs at different temperatures and o ABT-TSACPDs/PVC composites,and was confirmed as fixation of PL centers. 展开更多
关键词 Carbonized polymer dots Solid-state fluorescence MATRIX-FREE High performance Enhanced photoluminescence quantum yield
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