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Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes 被引量:3
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作者 姚常飞 周明 +1 位作者 罗运生 许从海 《Journal of Semiconductors》 EI CAS CSCD 2015年第6期105-109,共5页
Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circ... Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circuit is composed of a radio frequency (RF) bandstop filter and a tuning line for optimum reflection phase of the RF signal. S-parameters of the complete circuit are exported to a circuit simulator for voltage sensitivity analysis. For the W band detectors, the highest measured voltage sensitivity is 11800 mV/mW at 100 GHz, and the sensitivity is higher than 2000 mV/mW in 80-104 GHz. Measured tangential sensitivity (TSS) is higher than -38 dBm, and its linearity is superior than 0.99992 at 95 GHz. For the D band detector, the highest measured voltage sensitivity is 1600 mV/mW, and the typical sensitivity is 600 mV/mW in 110-170 GHz. TSS is higher than -29 dBm, and its linearity is superior than 0.99961 at 150 GHz. 展开更多
关键词 millimeter wave zero bias schottky diode detector voltage sensitivity
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