This study explored methods for improving the performance of Steady-State Visual Evoked Potential(SSVEP)-based Brain-Computer Interfaces(BCI), and introduced a new analytical method to quantitatively analyze and refle...This study explored methods for improving the performance of Steady-State Visual Evoked Potential(SSVEP)-based Brain-Computer Interfaces(BCI), and introduced a new analytical method to quantitatively analyze and reflect the characteristics of SSVEP. We focused on the effect of the pre-stimulation paradigm on the SSVEP dynamic models and the dynamic response process of SSVEP, and performed a comparative analysis of three pre-stimulus paradigms(black, gray, and white). Four dynamic models with different orders(second-and third-order)and with and without a zero point were used to fit the SSVEP envelope. The zero-pole analytical method was adopted to conduct quantitative analysis on the dynamic models, and the response characteristics of SSVEP were represented by zero-pole distribution characteristics. The results of this study indicated that the pre-stimulation paradigm affects the characteristics of SSVEP, and the dynamic models had good fitting abilities with SSVEPs under various types of pre-stimulation. Furthermore, the zero-pole characteristics of the models effectively characterize the damping coefficient, oscillation period, and other SSVEP characteristics. The comparison of zeros and poles indicated that the gray pre-stimulation condition corresponds to a lower damping coefficient, thus showing its potential to improve the performance of SSVEP-BCIs.展开更多
本文基于SMIC 28 nm CMOS工艺设计了一款应用于超宽带协议的具有带外噪声抑制功能的全集成低噪声放大器(Low Noise Amplifier,LNA),并提出了一种新型的LC串并联两级滤波结构.通过利用滤波器极点补偿LNA带内增益的设计方法,合理设计滤波...本文基于SMIC 28 nm CMOS工艺设计了一款应用于超宽带协议的具有带外噪声抑制功能的全集成低噪声放大器(Low Noise Amplifier,LNA),并提出了一种新型的LC串并联两级滤波结构.通过利用滤波器极点补偿LNA带内增益的设计方法,合理设计滤波负载等效电路的极点,使其略高于零点频率,在保证了LNA通带增益和噪声的情况下提高了滤波深度.对所设计的LNA进行了EMX建模及仿真验证.结果表明,该LNA在6.5~10 GHz的工作频带内,S_(21)高达21.17~25.28 d B,S_(11)小于-10.58 d B;S_(22)小于-11.20 d B,带内噪声系数仅为2.14~2.51 d B;带阻滤波器在5.8 GHz处可提供-35.45 d B的噪声抑制;在0.9 V供电电压下,LNA的静态功耗仅为9.36 m W.展开更多
基金supported by the Key Research and Development Program of Guangdong Province (No. 2018B030339001)the National Key Research and Development Program of China (No. 2017YFB1002505)the National Natural Science Foundation of China (No. 61431007)
文摘This study explored methods for improving the performance of Steady-State Visual Evoked Potential(SSVEP)-based Brain-Computer Interfaces(BCI), and introduced a new analytical method to quantitatively analyze and reflect the characteristics of SSVEP. We focused on the effect of the pre-stimulation paradigm on the SSVEP dynamic models and the dynamic response process of SSVEP, and performed a comparative analysis of three pre-stimulus paradigms(black, gray, and white). Four dynamic models with different orders(second-and third-order)and with and without a zero point were used to fit the SSVEP envelope. The zero-pole analytical method was adopted to conduct quantitative analysis on the dynamic models, and the response characteristics of SSVEP were represented by zero-pole distribution characteristics. The results of this study indicated that the pre-stimulation paradigm affects the characteristics of SSVEP, and the dynamic models had good fitting abilities with SSVEPs under various types of pre-stimulation. Furthermore, the zero-pole characteristics of the models effectively characterize the damping coefficient, oscillation period, and other SSVEP characteristics. The comparison of zeros and poles indicated that the gray pre-stimulation condition corresponds to a lower damping coefficient, thus showing its potential to improve the performance of SSVEP-BCIs.
文摘本文基于SMIC 28 nm CMOS工艺设计了一款应用于超宽带协议的具有带外噪声抑制功能的全集成低噪声放大器(Low Noise Amplifier,LNA),并提出了一种新型的LC串并联两级滤波结构.通过利用滤波器极点补偿LNA带内增益的设计方法,合理设计滤波负载等效电路的极点,使其略高于零点频率,在保证了LNA通带增益和噪声的情况下提高了滤波深度.对所设计的LNA进行了EMX建模及仿真验证.结果表明,该LNA在6.5~10 GHz的工作频带内,S_(21)高达21.17~25.28 d B,S_(11)小于-10.58 d B;S_(22)小于-11.20 d B,带内噪声系数仅为2.14~2.51 d B;带阻滤波器在5.8 GHz处可提供-35.45 d B的噪声抑制;在0.9 V供电电压下,LNA的静态功耗仅为9.36 m W.