The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×1...The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×10 13 cm -2 .It is demonstrated that the irradiation-induced degradation in the photovoltaic performance of the solar cells exists mainly in the short circuit current and the irradiation damage can be partly recovered by low temperature annealing at 200℃.In addition,it is found that the borosilicate cover glass has an obvious protection effect against the proton irradiation.展开更多
[Objective] This study aimed to investigate the effects of heavy-ion beams irradiation on the seed germination potential, survival rate, antioxidant enzyme activi- ties and lipid peroxidation of sweet sorghum. [Method...[Objective] This study aimed to investigate the effects of heavy-ion beams irradiation on the seed germination potential, survival rate, antioxidant enzyme activi- ties and lipid peroxidation of sweet sorghum. [Method] The dry seeds were irradiated by ＇2（36. heavy ion beams with absorbed doses： 0, 40, 80, 120, 160 and 200 Gy, respectively. Then, the seed germination potential, survival rate, antioxidant enzyme activities and lipid peroxidation of sweet sorghum were measured. [Result] Heavy-ion beams irradiation exhibited different influence on germination potential and survival rates. Germination rate showed a downward trend, but the corresponding survival curve of seedlings was saddle-shaped. The activities of SOD, POD, CAT and ASA- POD changed in different trends as well. The MDA content rose toward increasing irradiation dose, suggesting that high dose of heavy-ion beams irradiation enhanced the damage to membrane of sweet sorghum seedlings. [Conclusion] After being irra- diated, germination potential and survival rates of sweet sorghum were decreased, and antioxidant enzymes activity changed greatly. This study laid the basis for fur- ther work on breeding and improvement of sweet sorghum irradiated by ,^（12）C^（6＋） heavy ion beams.展开更多
The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be disti...The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.展开更多
In this work,the microstructure and optical properties of the Mo/Si multilayers mirror for the space extreme-ultraviolet solar telescope before and after 100 keV proton irradiation have been investigated.EUV/soft X-ra...In this work,the microstructure and optical properties of the Mo/Si multilayers mirror for the space extreme-ultraviolet solar telescope before and after 100 keV proton irradiation have been investigated.EUV/soft X-ray reflectometer(EXRR) results showed that,after proton irradiation,the reflectivity of the Mo/Si multilayer decreased from 12.20% to 8.34% and the center wavelength revealed red shift of 0.38 nm,as compared with those before proton irradiation.High-resolution transmission electron microscopy(HRTEM) observations revealed the presence of MoSi 2,Mo 3 Si and Mo 5 Si 3 in Mo-on-Si interlayers before irradiation.The preferred orientation such as MoSi 2 with(101) texture and Mo 5 Si 3 with(310) texture was formed in Mo-on-Si interlayers after proton irradiation,which led to the increase of thickness in the interlayers.It is suggested that the changes of microstructures in Mo/Si multilayers under proton irradiation could cause optical properties degradation.展开更多
AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 ...AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/crn2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10^12 cm-2.eV-1 to 1.82×10^12 cm-2.eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the A1GaN surface by the NbA10 dielectric layer.展开更多
文摘The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×10 13 cm -2 .It is demonstrated that the irradiation-induced degradation in the photovoltaic performance of the solar cells exists mainly in the short circuit current and the irradiation damage can be partly recovered by low temperature annealing at 200℃.In addition,it is found that the borosilicate cover glass has an obvious protection effect against the proton irradiation.
基金Supported by Knowledge Innovation Program of the Chinese Academy of Sciences(KJCX2-EW-N05)~~
文摘[Objective] This study aimed to investigate the effects of heavy-ion beams irradiation on the seed germination potential, survival rate, antioxidant enzyme activi- ties and lipid peroxidation of sweet sorghum. [Method] The dry seeds were irradiated by ＇2（36. heavy ion beams with absorbed doses： 0, 40, 80, 120, 160 and 200 Gy, respectively. Then, the seed germination potential, survival rate, antioxidant enzyme activities and lipid peroxidation of sweet sorghum were measured. [Result] Heavy-ion beams irradiation exhibited different influence on germination potential and survival rates. Germination rate showed a downward trend, but the corresponding survival curve of seedlings was saddle-shaped. The activities of SOD, POD, CAT and ASA- POD changed in different trends as well. The MDA content rose toward increasing irradiation dose, suggesting that high dose of heavy-ion beams irradiation enhanced the damage to membrane of sweet sorghum seedlings. [Conclusion] After being irra- diated, germination potential and survival rates of sweet sorghum were decreased, and antioxidant enzymes activity changed greatly. This study laid the basis for fur- ther work on breeding and improvement of sweet sorghum irradiated by ,^（12）C^（6＋） heavy ion beams.
文摘The change of light output power of LEDs based on A1GalnP heterostructures with multiple quantum wells （590 nm and 630 nm） under irradiation by fast neutrons depends on the operating current density. It can be distinguished the regions of high, average and low electron injection. Operating current, this corresponds to the position of the boundary between the selected levels of the electron injection, increases with increasing neutron fluence. The final stage of the reducing process of the light output power under irradiation is the regime of low electron injection. The relative change in light output power depends on the operating current （operating current density） and can be described by a fairly simple equation. Established relations predict radiation resistance of LEDs, and it makes the most rational justification of operating modes of light-emitting diodes in terms of radiation resistance.
基金supported by the National Natural Science Foundation of China (Grant No. 50671042)the Open Project of State Key Laboratory of Applied Optics (Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences) (Grant No. 201004)the Ph.D.Innovation Programs Foundation of Jiangsu Province (Grant No.CXZZ12_0671)
文摘In this work,the microstructure and optical properties of the Mo/Si multilayers mirror for the space extreme-ultraviolet solar telescope before and after 100 keV proton irradiation have been investigated.EUV/soft X-ray reflectometer(EXRR) results showed that,after proton irradiation,the reflectivity of the Mo/Si multilayer decreased from 12.20% to 8.34% and the center wavelength revealed red shift of 0.38 nm,as compared with those before proton irradiation.High-resolution transmission electron microscopy(HRTEM) observations revealed the presence of MoSi 2,Mo 3 Si and Mo 5 Si 3 in Mo-on-Si interlayers before irradiation.The preferred orientation such as MoSi 2 with(101) texture and Mo 5 Si 3 with(310) texture was formed in Mo-on-Si interlayers after proton irradiation,which led to the increase of thickness in the interlayers.It is suggested that the changes of microstructures in Mo/Si multilayers under proton irradiation could cause optical properties degradation.
基金supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191)the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002)
文摘AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/crn2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10^12 cm-2.eV-1 to 1.82×10^12 cm-2.eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the A1GaN surface by the NbA10 dielectric layer.
