Amorphous silicon films are prepared at lower temperature of 350 ℃ by new catalytic chemical vapor deposition method.In the method,material gases (SiH 4 and H 2) are decomposed by catalytic reaction at given temper...Amorphous silicon films are prepared at lower temperature of 350 ℃ by new catalytic chemical vapor deposition method.In the method,material gases (SiH 4 and H 2) are decomposed by catalytic reaction at given temperature,so a-Si films are deposited on substrates.It is found that a-Si films with high quality can be obtain,such as high photosensitivity of 10 6,low spin density of 2.5×10 16 cm -3 .展开更多
文摘Amorphous silicon films are prepared at lower temperature of 350 ℃ by new catalytic chemical vapor deposition method.In the method,material gases (SiH 4 and H 2) are decomposed by catalytic reaction at given temperature,so a-Si films are deposited on substrates.It is found that a-Si films with high quality can be obtain,such as high photosensitivity of 10 6,low spin density of 2.5×10 16 cm -3 .
