随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射...随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射臂的间隔时间,实现不同喷射臂无间隔连续喷射技术,并优化化学药液喷射臂的摆臂速度、轨迹和起始终止角度等参数。采用北京七星华创电子股份有限公司自主研发的300 mm 65 nm Cu互连单片清洗机进行工艺实验,结果表明:清洗后晶片表面无边缘和辐射状污染,清洗后晶片表面临界颗粒直径0.12μm,临界颗粒数每片30个;临界尺寸变化不大于2%。展开更多
The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradati...The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.展开更多
文摘随着Si片尺寸加大和特征尺寸的缩小,对Si片的洁净程度、表面的化学态以及表面缺陷等要求越来越高。针对300 mm 65 nm Cu互连晶片清洗后表面常出现边缘和辐射状污染的问题。在理论分析的基础上,研究了缩短化学药液喷射臂和去离子水喷射臂的间隔时间,实现不同喷射臂无间隔连续喷射技术,并优化化学药液喷射臂的摆臂速度、轨迹和起始终止角度等参数。采用北京七星华创电子股份有限公司自主研发的300 mm 65 nm Cu互连单片清洗机进行工艺实验,结果表明:清洗后晶片表面无边缘和辐射状污染,清洗后晶片表面临界颗粒直径0.12μm,临界颗粒数每片30个;临界尺寸变化不大于2%。
基金Supported by the National Natural Science Foundation of China under Grant Nos 11475255,U1532261 and 11505282
文摘The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
