We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 in...We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.展开更多
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the ho...The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.展开更多
After different heat treatment processes, the metal compound, the microstructure and the hardness of the C-Cr-W- Mo-V-RE Fe-based hardfacing layers are investigated by means of metallographic microscope, X-ray diffrac...After different heat treatment processes, the metal compound, the microstructure and the hardness of the C-Cr-W- Mo-V-RE Fe-based hardfacing layers are investigated by means of metallographic microscope, X-ray diffraction （ XRD ）, energy dispersive spectrum（ EDS ）, transmission electron microscope（TEM） and hardness tester. The results show that the hardfacing layers have higher tempering stability and secondary hardening property. After quenching at 820 ℃ ,the hardness value（ HRC37 ） and the microstructure of the layers are similar to that normalized at 820 - 1 000 ℃. The tempering stability and the hardness increases with increasing quench temperature, which is attributed to the amount of the alloy element in the matrix. These results are very helpful for improving the mechanical properties of the hardfacing layers.展开更多
This paper provides the performance analysis of multiuser Vertical Bell Laboratories Layered Space-Time (V-BLAST) system receiver structures for Multiple-input Multiple-Output (MIMO) channel at a base station with ass...This paper provides the performance analysis of multiuser Vertical Bell Laboratories Layered Space-Time (V-BLAST) system receiver structures for Multiple-input Multiple-Output (MIMO) channel at a base station with assumption of perfect channel estimation and perfect timing delay estimation. In MIMO channels the receivers such as decorrelator, Minimum Mean Square Error (MMSE) and Multistage Parallel Interference Cancellation (MPIC) receiver outperform the conventional receiver. Withal, since the multiple antenna interference led to a strong impact on the performance degradation of a multistage interference cancellation receiver, the performance of MPIC receiver was highly degraded based on system loading.展开更多
在不预热情况下 ,通过调整熔敷金属Cu和Ni的含量 ,改变铸铁激光熔敷层内奥氏体相与渗碳体相体积分数 ,分析了奥氏体相体积分数对熔敷层抗裂性的影响。在最佳激光熔敷工艺参数基础上 ,研究了Cu和Ni对熔敷层奥氏体体积分数、表面裂纹率及...在不预热情况下 ,通过调整熔敷金属Cu和Ni的含量 ,改变铸铁激光熔敷层内奥氏体相与渗碳体相体积分数 ,分析了奥氏体相体积分数对熔敷层抗裂性的影响。在最佳激光熔敷工艺参数基础上 ,研究了Cu和Ni对熔敷层奥氏体体积分数、表面裂纹率及表面耐磨性的影响。获得的未裂临界熔敷层面积为 5 5 .1cm2 ,其对应熔敷材料为Cu Ni C Si Fe。以此熔敷材料为基础 ,改变V含量 ,在熔敷层得到原位自生V2 C。研究了V2 C对熔敷层耐磨性的影响 ,分析了V2 C对熔敷层硬度及磨损质量损失的影响规律 ,最终获得了可显著提高熔敷层抗裂性及耐磨性的Cu Ni V C Si展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61204049 and 51402366)Guangdong Natural Science Foundation,China(Grant No.S2012040007363)Foundation for Distinguished Young Talents in Higher Education of Guangdong,China(Grant Nos.2012LYM 0058 and2013LYM 0022)
文摘We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.
基金supported by the State Key Program of the National Science Foundation of China(Grant No.61334001)the National Key R&D Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)Development Program of Jiangxi province(Grant No.20165ABC28007 and No20182ABC28003)
文摘The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
文摘After different heat treatment processes, the metal compound, the microstructure and the hardness of the C-Cr-W- Mo-V-RE Fe-based hardfacing layers are investigated by means of metallographic microscope, X-ray diffraction （ XRD ）, energy dispersive spectrum（ EDS ）, transmission electron microscope（TEM） and hardness tester. The results show that the hardfacing layers have higher tempering stability and secondary hardening property. After quenching at 820 ℃ ,the hardness value（ HRC37 ） and the microstructure of the layers are similar to that normalized at 820 - 1 000 ℃. The tempering stability and the hardness increases with increasing quench temperature, which is attributed to the amount of the alloy element in the matrix. These results are very helpful for improving the mechanical properties of the hardfacing layers.
文摘This paper provides the performance analysis of multiuser Vertical Bell Laboratories Layered Space-Time (V-BLAST) system receiver structures for Multiple-input Multiple-Output (MIMO) channel at a base station with assumption of perfect channel estimation and perfect timing delay estimation. In MIMO channels the receivers such as decorrelator, Minimum Mean Square Error (MMSE) and Multistage Parallel Interference Cancellation (MPIC) receiver outperform the conventional receiver. Withal, since the multiple antenna interference led to a strong impact on the performance degradation of a multistage interference cancellation receiver, the performance of MPIC receiver was highly degraded based on system loading.
文摘在不预热情况下 ,通过调整熔敷金属Cu和Ni的含量 ,改变铸铁激光熔敷层内奥氏体相与渗碳体相体积分数 ,分析了奥氏体相体积分数对熔敷层抗裂性的影响。在最佳激光熔敷工艺参数基础上 ,研究了Cu和Ni对熔敷层奥氏体体积分数、表面裂纹率及表面耐磨性的影响。获得的未裂临界熔敷层面积为 5 5 .1cm2 ,其对应熔敷材料为Cu Ni C Si Fe。以此熔敷材料为基础 ,改变V含量 ,在熔敷层得到原位自生V2 C。研究了V2 C对熔敷层耐磨性的影响 ,分析了V2 C对熔敷层硬度及磨损质量损失的影响规律 ,最终获得了可显著提高熔敷层抗裂性及耐磨性的Cu Ni V C Si
