A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of...A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the ^(63)Ni source increases from 2 ×10^(-3) to10 lm, the theoretical maximum device conversion efficiency increases from 16.77 to 23:51% and the total conversion efficiency decreases from 16.73 to 1:48%.Furthermore, a feasible design with a maximum output power density of 0:36 μW=cm^2 and an optimal device conversion efficiency of 23:5% is obtained.展开更多
基金supported by the National Major Scientific Instruments and Equipment Development Project(No.2012YQ240121)the National Natural Science Foundation of China(No.11075064)
文摘A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the ^(63)Ni source increases from 2 ×10^(-3) to10 lm, the theoretical maximum device conversion efficiency increases from 16.77 to 23:51% and the total conversion efficiency decreases from 16.73 to 1:48%.Furthermore, a feasible design with a maximum output power density of 0:36 μW=cm^2 and an optimal device conversion efficiency of 23:5% is obtained.
