Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Fabrication of High Color Rendering Index White Light Emitting Diodes from Gold Nanoclusters

We demonstrated gold nanoclusters as color tunable emissive light converters for the application of white light emitting diodes (WLEDs). A blue LED providing 460 nm to excite gold nanoclusters mixed with UV curable material generates broad bandwidth emission at the visible range. Increasing the amount of gold nanoclusters, the correlated color temperature of WLEDs tuned from cold white to warm white, and also results in the variation of color rendering index (CRI). The highest CRI in the experiment is 92.

Review of blue perovskite light emitting diodes with optimization strategies for perovskite film and device structure

Perovskite light emitting diodes(PeLEDs)have attracted considerable research attention because of their external quantum efficiency(EQE)of>20%and have potential scope for further improvement.However,compared to red and green PeLEDs,blue PeLEDs have not been extensively investigated,which limits their commercial applications in the fields of luminance and full-color displays.In this review,blue-PeLED-related research is categorized by the composition of perovskite.The main challenges and corresponding optimization strategies for perovskite films are summarized.Next,the novel strategies for the design of device structures of blue PeLEDs are reviewed from the perspective of transport layers and interfacial layers.Accordingly,future directions for blue PeLEDs are discussed.This review can be a guideline for optimizing perovskite film and device structure of blue PeLEDs,thereby enhancing their development and application scope.

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

Potential red-emitting phosphor GdNbO_4:Eu^(3+),Bi^(3+) for near-UV white light emitting diodes

A red-emitting phosphor GdNbO4：Eu3＋,Bi3＋ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction （XRD）, particle size analyzer and fluorescence spectrometer. The single phase of GdNbO4：Eu3＋,Bi3＋ was obtained at 1150~C and the average particle diameter was about 2.30 μm. Excitation and emission spectra reveal that the phosphor can be ef- ficiently excited by ultraviolet （UV） light （394 nm） and emit the strong red light of 612 nm due to the Eu3＋ transition of SD0~TF2. The opti- mum content of Eu3＋ doped in the phosphor GdNbOn：Eu3＋ is 20mo1%. The phosphor Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ shows much stronger photoluminescence intensity and better chromaticity coordinates （x=0.642, 0.352） than GdNbO4：Eu3＋. It is confirmed that Gdo.80NbO4：0.20Eu3＋,0.03Bi3＋ is a potential candidate for near-UV chip-based white light emitting diodes.

Near-infrared lead chalcogenide quantum dots:Synthesis and applications in light emitting diodes

This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.

Organic Light Emitting Diodes with Lithium Contained Alq3 as Electron Injection Layer

lNovel lithium doped tris 8 hydroxylquinoline aluminium(Alq3:Li) layer is deposited between emission layer and electron injection aluminium electrode as an electron injection assistant layer in different organic light emitting diodes(OLED) to lower the electron injection barrier. In these devices, Alq3 is used as emission layer, and a bilayer film of N,N bis (1 naphhyl) N,N diphenyl 1,1 biphenyle 4,4' diamine(NPB) and 4,4,4' tris(3 methyl phenylphenylamino) triphenylamine( m MTDATA) used as hole transport layer(HTL). The electroluminescent performance of devices with different thicknesses of Alq3∶Li shows that the insertion of the lithium doped Alq3 layer can reduce the turn on voltage by at least 2 volts, and the stability of devices with this lithium doped Alq3 layer is improved too. It can also change the efficiency of devices. Compared with an ultra thin lithium fluoride(LiF) layer, Alq3∶Li sheet gives similar effects but higher efficiency and can be much thicker and hence it is easier to control the deposition.

Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride （Mg：PTCDA） as electron injection layer and silver as cathode were demonstrated. As compared to Mg ： Ag cathode, the combination of the Mg ： PTCDA layer and silver provided enhanced electron injection into tris （8- quinolinolato） aluminium. The device with 1 ： 2 Mg ： PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg ： Ag cathode. The properties of Mg ： PTCDA composites were studied as well.

A recent advances of blue perovskite light emitting diodes for next generation displays

The halide perovskite blue light emitting diodes(PeLEDs)attracted many researchers because of its fascinating optoelectrical properties.This review introduces the recent progress of blue PeLEDs which focuses on emissive layers and interlayers.The emissive layer covers three types of perovskite structures:perovskite nanocrystals(PeNCs),2-dimensional(2D)and quasi-2D perovskites,and bulk(3D)perovskites.We will discuss about the remaining challenges of blue PeLEDs,such as limited performances,device instability issues,which should be solved for blue PeLEDs to realize next generation displays.

Thermal Analysis of Organic Light Emitting Diodes Based on Basic Heat Transfer Theory

We investigate the thermal characteristics of standard organic light-emitting diodes （OLEDs） using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estimate the device temperature, which is linearly with electrical input power. The simulation results show that there is almost no temperature gradient within the OLED device working under steady state conditions. Furthermore, thermal analysis simulation results show that the surface properties （convective heat transfer coetficient and surface emissivity） of the substrate or cathode can significantly affect the temperature distribution of the OLED.

Efficiency analysis of a-SiC:H thin film light emitting diodes

The hole injection,the radiative recombination and the device luminescent efficiencies of amorphous silicon carbide thin film p-i-n junction light emitting diodes are quantitatively calculated,and the effect of the carrier(especially the hole) injection and recombination processes on the device luminescent characteristics are revealed.Without considering the device junction temperature,it is found that the device luminescent efficiency mainly depends on the hole injection efficiency at low field and the hole radiative recombination efficiency at high field respectively.The theoretical analyses are in well agreement with the experimental results.

Highly Efficient and Stable Hybrid White Organic Light Emitting Diodes with Controllable Exciton Behavior by a Mixed Bipolar Interlayer

Highly efficient and stable hybrid white organic light-emitting diodes （HWOLEDs） with a mixed bipolar interlayer between fluorescent blue and phosphorescent yellow emitting layers are demonstrated. The bipolar interlayer is a mixture of p-type diphenyl （l0-phenyl-lOH-spiro [acridine-9,9＇-fluoren]-3Lyl） phosphine oxide and n-type 2＇,2- （1,3,5-benzinetriyl）-tris（1-phenyl-l-H-benzimidazole）. The electroluminance and Commission Internationale de l＇Eclairage （CIE1931） coordinates＇ characteristics can be modulated easily by adjusting the ratio of the hole- predominated material to the electron-predominated material in the interlayer. The hybrid WOLED with a p-type：n-type ratio of 1：3 shows a maximum current efficiency and power efficiency of 61.1 ed/A and 55.8 lm/W, respectively, with warm white CIE coordinates of （0.34, 0.43）. The excellent efficiency and adaptive CIE coordi- nates are attributed to the mixed interlayer with improved charge carrier balance, optimized exciton distribution, and enhanced harvesting of singlet and triplet excitons.

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

The degradation mechanism of GaN-based near-ultraviolet(NUV,320-400 nm)light emitting diodes(LEDs)with low-indium content under electrical stress is studied from the aspect of defects.A decrease in the optical power and an increase in the leakage current are observed after electrical stress.The defect behaviors are characterized using deep level transient spectroscopy(DLTS)measurement under different filling pulse widths.After stress,the concentration of defects with the energy level of 0.47-0.56 eV increases,accompanied by decrease in the concentration of 0.72-0.84 eV defects.Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra,the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation,which was previously passivated with hydrogen.This study reveals the evolution process of defects under electrical stress and their spatial location,laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.

Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure

A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.

Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes

The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.

Degradation behaviors of high power GaN-based blue light emitting diodes

The degradation mechanism of high power InGaN/GaN blue light emitting diodes （LEDs） is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then remained almost unchanged, and the reverse current at-5 V increased from 10^-9 A to 10^-7 A during the aging process. The power law, whose meaning was re-illustrated by the improved rate equation, was used to analyze the light output power-injection current （L-I） curves. The analysis results indicate that nonradiative recombination, Auger recombination, and the third-order term of carriers overflow increase during the aging process, all of which may be important reasons for the degradation of LEDs. Besides, simulating L-I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism, because they change slightly when the LED is stressed.

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.

A novel yellow phosphor for white light emitting diodes

This paper reports that a novel yellow phosphor, LiSrBO3：Eu2＋, was synthesized by the solid-state reaction. Thc excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet （360 and 400 nm） and blue （425 and 460 nm） light, and exhibits a satisfactory yellow performance （565 nm）. The role of concentration of Eu2＋ on the emission intensity in LiSrBO3 is studied, and it is found that the critical concentration is 3 mol%, and the concentration self-quenching mechanism is the dipole-dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip （460 nm or 400 nm） with LiSrBO3：Eu2＋ phosphor, the CIE chromaticity is （x = 0.341, y =0.321） and （x = 0.324, y = 0.318）, respectively. Therefore, LiSrBOa：Eu^2＋ is a promising yellow phosphor for white light emitting diodes.