C3N4 films have been synthesized on both Si and R substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C3N4 and p-C3N4 respectively. The experiment...C3N4 films have been synthesized on both Si and R substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C3N4 and p-C3N4 respectively. The experimental X-ray spectra of films deposited on both Si and R substrates showed all the strong peaks of α-C3N4 and β-C3N4 so the films are mixtures of α-C3N4 and β-C3N4. The N/C atomic ratio is in the range of 1.0-2.0. X-ray photoelectron spectroscopy (XPS) analysis indicated that the binding energy of C 1s and N 1s are 286.2 eV and 399.5 eV respectively, corresponding to polarized C-N bond. Fourier transform infrared absorption (FT-IR) and Raman spectra support the existence of C-N covalent bond in the films. Nano-indentation hardness tests showed that the bulk modulus of a film deposited on R is up to 349 GPa.展开更多
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.19392300,19674009),the State Kdy Laboratory of Advanced Materials at Beijing University of Science and Technolo and the Beijing Laboratory of Vacuum Physics,Chinese Aca
文摘C3N4 films have been synthesized on both Si and R substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C3N4 and p-C3N4 respectively. The experimental X-ray spectra of films deposited on both Si and R substrates showed all the strong peaks of α-C3N4 and β-C3N4 so the films are mixtures of α-C3N4 and β-C3N4. The N/C atomic ratio is in the range of 1.0-2.0. X-ray photoelectron spectroscopy (XPS) analysis indicated that the binding energy of C 1s and N 1s are 286.2 eV and 399.5 eV respectively, corresponding to polarized C-N bond. Fourier transform infrared absorption (FT-IR) and Raman spectra support the existence of C-N covalent bond in the films. Nano-indentation hardness tests showed that the bulk modulus of a film deposited on R is up to 349 GPa.
