Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.

Growth and fundamentals of bulk β-Ga_2O_3 single crystals

The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.

切削液对金刚石线锯切割β-Ga_(2)O_(3)晶片表面质量的影响

为了开发出更适合β-Ga_(2)O_(3)晶片切片的切削液,探讨金刚石线锯切片过程中不同切削液对β-Ga_(2)O_(3)晶片表面质量的影响,通过测量接触角和表面张力,研究不同切削液对β-Ga_(2)O_(3)晶片表面的润湿性。采用粗糙度测量仪、非接触式测厚仪和扫描电镜(SEM)对晶片表面进行测试表征,研究去离子水、添加AEO-9的水基切削液和乳化切削液在不同工艺参数下对切割(010)面β-Ga_(2)O_(3)晶片的表面粗糙度、表面形貌、总厚度变化以及亚表面损伤层深度的影响。结果表明:与去离子水相比,添加AEO-9的水基切削液和乳化切削液均能有效降低β-Ga_(2)O_(3)表面的接触角和表面张力,表明2种切削液均可提高晶片表面润滑性;乳化切削液的效果随着工艺参数的变化而波动很大,只有在低切削热和大切削力的条件下,才能明显优化晶圆表面质量,而水基切削液可稳定地获得较高的晶片表面质量,更适用于β-Ga_(2)O_(3)晶片切割。

A review of β-Ga_2O_3 single crystal defects, their effects on device performance and their formation mechanism

As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.

Influence of annealing treatment on the luminescent properties of Ta:β-Ga2O3 single crystal

Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.

Growth and physical characterization of high resistivityFe:β-Ga2O3 crystals

High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga_2O_3

A solar-blind photodetector is fabricated on single crystal Ga_2O_3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet(UV) transmittance.The quantum efficiency is about 400% at 42 V. The Ga_2O_3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible(= 3213) and solar-blind/UV(= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature(RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

Identification and characterization of single crystal Bi_(2)Te_(3-x)Se_(x) alloy

The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.

Growth and Characteristics of Tunable Laser Crystals β-Ga2O3∶Cr

β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 that results the 4T2 to 4A2 transition and show broad emission around 690 nm. β-Ga2O3 single crystals doped with different Cr3+ concentrations were grown by floating zone technique. Their absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were calculated based on the absorption spectra.

A Reproducible Approach of Preparing High-Quality Overdoped Bi_2Sr_2CaCu_2O_(8+δ) Single Crystals by Oxygen Annealing and Quenching Method

We report a reproducible approach in preparing high-quality overdoped Bi2 Sr2 CaCu2 08＋δ （Bi2212） single crystals by annealing Bi2212 crystals in high oxygen pressure followed by a fast quenching. In this way, high-quality overdoped and heavily overdoped Bi2212 single crystals are obtained by controlling the annealing oxygen pressure. We find that, beyond a limit of oxygen pressure that can achieve most heavily overdoped Bi2212 with a Tc N63 K, the annealed Bi2212 begins to decompose. This accounts for the existence of the hole-doping limit and thus the Tc limit in the heavily overdoped region of Bi2212 by the oxygen annealing process. These results provide a reliable way in preparing high-quality overdoped and heavily overdoped Bi2212 crystals that are important for studies of the physical properties, electronic structure and superconductivity mechanism of the cuprate superconductors.

Crystal Growth and Properties of Co^(2+) doped Y_3Sc_2Ga_3O_(12) Single Crystal

Single crystal of cobalt (Co)-doped Y3Sc2Ga3O12 (YSGG) with the dimensions up to Φ20×40 mm3 and undoped YSGG crystal with the dimensions up to Φ28×60 mm3 have been grown using the Czochralski technique. The structure of the crystal was characterized by the X-ray powder diffraction (XRPD) method. The absorbance spectra of the crystal shows that it has strong absorption bands at 606 and 1540 nm. The results indicate that the crystal Y3Sc2Ga3O12 may be a kind of good Q-switch material.

Extremely fast vortex dynamics in Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ) crystalline nanostrip

The maximum velocity of a mobile vortex in movement is generally limited by the phenomenon of flux-flow instability(FFI),which necessitates weak vortex pinning and fast heat removal from non-equilibrium electrons.We here demonstrate exfoliations and nano-fabrications of Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ) crystalline nanostrips,which possess a rather weak pinning volume of vortices,relatively low resistivity,and large normal electron diffusion coefficient.The deduced vortex velocity in Bi_(2)Sr_(2)Ca_(2)Cu_(3)O_(10+δ) crystalline nanostrips can be up to 300 km/s near the superconducting transition temperature,well above the speed of sound.The observed vortex velocity is an order of magnitude faster than that of conventional superconducting systems,representing a perfect platform for exploration of ultra-fast vortex matter and a good candidate for fabrications of superconducting nanowire single photon detectors or superconducting THz modulator.

Na_(2)O对锂铝硅微晶玻璃析晶及性能的影响

采用熔融法制备了不同Na_(2)O含量的透明锂铝硅微晶玻璃,通过DSC、XRD、FESEM等测试方法研究了不同Na_(2)O含量对玻璃析晶及性能的影响。结果表明:Na_(2)O的引入能显著降低玻璃的转变温度和析晶温度,抑制LiAlSi_(4)O_(10)晶相的析出。但Na_(2)O的引入促使微晶玻璃中析出Li_(2)Si_(2)O_(5)新相,并且随着Na_(2)O引入量的增加,Li_(2)Si_(2)O_(5)转变为主晶相。由于晶体尺寸均为纳米级,主晶相的转变对透过率影响较小,微晶玻璃的可见光透过率均高于85%。主晶相的转变有效增强了微晶玻璃的机械性能,其弯曲强度由300 MPa提升至331 MPa。Na_(2)O的引入有效增强了Na-K交换,Na_(2)O含量为4%(质量分数)的Li 2O-Al_(2)O_(3)-SiO_(2)微晶玻璃在410℃的KNO_(3)熔盐中交换6 h后,维氏硬度由7.108 GPa提升至7.403 GPa,弯曲强度由331 MPa提升至470 MPa。

Density functional theory calculations on single atomic catalysis:Ti-decorated Ti3C2O2 monolayer(MXene)for HCHO oxidation

Formaldehyde(HCHO) is a common indoor pollutant, long-term exposure to HCHO may harm human health. Its efficient removal at mild conditions is still challenging. The catalytic oxidation of HCHO molecules on a single atomic catalyst, Ti-decorated Ti3C2O2(Ti/Ti3C2O2) monolayer, is investigated by performing the first principles calculations in this work. It demonstrates that Ti atoms can be easily well dispersed at the form of single atom on Ti3C2O2 monolayer without aggregation. For HCHO catalytic oxidation, both Langmuir-Hinshelwood(LH) and Eley-Rideal(ER) mechanisms are considered. The results show that the step of HCHO dissociative adsorption on Ti/Ti3C2O2 with activated O2 can release high energy of 4.05 e V based on the ER mechanism, which can help to overcome the energy barrier(1.04 e V) of the subsequent reaction steps. The charge transfer from *OH group to CO molecule(dissociated from HCHO) not only promotes *OH group activation but also plays an important role in the H2 O generation along the ER mechanism. Therefore, HCHO can be oxidized easily on Ti/Ti3C2O2 monolayer, this work could provide significant guidance to develop effective non-noble metal catalysts for HCHO oxidation and broaden the applications of MXene-based materials.

Infrared active phonon modes and ionicity of single crystal MgAl2O4

Near-normal incident infrared reflectivity spectra of （100） MgAl2O4 spinel single crystal have been measured at different temperatures in the frequency region between 50 and 6000 cm^-1. Eight infrared-active phonon modes are identified, which are fitted with the factorized form of the dielectric function. The dielectric property and optical conductivity of the MgAl2O4 crystal are analysed. From TO/LO splitting, the effective Szigeti charges and Born effective charges at different temperatures are calculated for studying the ionicity and the effect of polarization. Based on the relationship between the （LO-TO）1 splitting, which represents the transverse and longitudinal frequencies splitting of the highest energy phonon band in the reflectivity spectrum, and the ionic-covalent parameter, the four main phonon modes are assigned. MgA1204 can be considered as a pure ionic crystal and its optical characters do not change with decreasing temperature, so it may be used as a suitable substrate for high-Tc superconducting thin films.

La_(2)O_(3)刻蚀对金刚石单晶性能的影响

以氮气为保护气氛,在820~980℃下用La_(2)O_(3)刻蚀人造金刚石单晶表面,研究稀土氧化物La_(2)O_(3)刻蚀对人造金刚石单晶性能的影响。利用扫描电子显微镜观测刻蚀后金刚石单晶不同晶面的表面形貌,通过人造金刚石单晶表面粗糙度、单颗粒抗压强度、抗冲击韧性和铜基结合剂金刚石节块抗弯强度来表征刻蚀前后金刚石单晶性能的变化。结果表明:La_(2)O_(3)对金刚石{100}面和{111}面的刻蚀是各向异性的;当刻蚀温度从820℃升高到980℃时,{100}面表面粗糙度从0.40μm增加至2.28μm,{111}面表面粗糙度从0.70μm增加到3.32μm,金刚石单颗粒的抗压强度由未刻蚀金刚石的576 N降低到最小530 N,冲击韧性由92.94%下降到89.21%。当金刚石体积分数为5%时,刻蚀后金刚石节块的抗弯强度增幅达到17.9%。

Effect of Fe_2O_3 on non-isothermal crystallization of CaO-MgO-Al_2O_3-SiO_2 glass

The crystallization behavior and kinetics of CaO-MgO-Al2O3 SiO2（CMAS） glass with the Fe2O3 content ranging from zero to 5%were investigated by differential scanning calorimetry（DSC）.The structure and phase analyses were made by Fourier transform infrared spectroscopy（FT-IR） and X-ray diffraction（XRD）.The experiment results show that the endothermic peak temperature about 760℃ is associated with transition and the exothermic peak temperature about 1000℃ is associated with crystallization.The crystallization peak temperature decreases with increasing the Fe203 content.The crystallization mechanism is changed from two-dimensional crystallization to one-dimensional growth,and the intensity of diopside peaks becomes stronger gradually.There is a saltation for the crystallization temperature with the addition of 0.5%Fe2O3 due to the decomposition of Fe2O3.Si-O-Si,O-Si-O and T-O-T（T=Si,Fe,Al） linkages are observed in Fe2O3-CaO-MgO-Al2O3-SiO2 glass.

外电场辅助化学气相沉积方法制备网格状β-Ga_2O_3纳米线及其特性研究

利用外电场辅助化学气相沉积(CVD)方法,在蓝宝石衬底上制备出了由三组生长方向构成的网格状β-Ga_2O_3纳米线.研究了不同外加电压大小对β-Ga_2O_3纳米线表面形貌、晶体结构以及光学特性的影响.结果表明:外加电压的大小对样品的表面形貌有着非常大的影响,有外加电场作用时生长的β-Ga_2O_3纳米线取向性开始变好,只出现了由三组不同生长方向构成的网格状β-Ga_2O_3纳米线;并且随着外加电压的增加,纳米线分布变得更加密集、长度明显增长.此外,采用这种外电场辅助的CVD方法可以明显改善样品的结晶和光学质量.

β-Ga_2O_3单晶浮区法生长及其光学性质

用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶,对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn4+和Ti4+的掺杂对其紫外吸收边影响。-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。