利用放电等离子烧结技术 (SPS)对不同温度下以 Al N添加剂的 β- Si C超细粉进行烧结。利用 XRD和 SEM测试手段研究试样的致密化机理。结果表明 ,添加 Al N对 β- Si C粉末烧结有重要的作用 ,在温度机制和晶型转变机制共同作用下烧结制...利用放电等离子烧结技术 (SPS)对不同温度下以 Al N添加剂的 β- Si C超细粉进行烧结。利用 XRD和 SEM测试手段研究试样的致密化机理。结果表明 ,添加 Al N对 β- Si C粉末烧结有重要的作用 ,在温度机制和晶型转变机制共同作用下烧结制备得到了几乎完全致密的 Si C试样。展开更多
本文研究了 β- Si C微粉及 β- Si C-环氧脂漆复合防晕涂层的非线性导电性。表明小粒径 β- Si C非线性好 ,粒径越小电阻越低非线性系数越大 ,粒径在 14～ 2 1μm之间时非线性最好。与粒径相近的α- Si C相比 ,β- Si C的非线性系数大...本文研究了 β- Si C微粉及 β- Si C-环氧脂漆复合防晕涂层的非线性导电性。表明小粒径 β- Si C非线性好 ,粒径越小电阻越低非线性系数越大 ,粒径在 14～ 2 1μm之间时非线性最好。与粒径相近的α- Si C相比 ,β- Si C的非线性系数大、电阻率低。β- Si C防晕涂层的非线性系数随粒径增大或合成温度提高而变大 ;同粒度条件下 ,则随 β- Si C含量提高而增大 ,防晕电压升高。β- Si C调节α- Si C防晕涂层的电阻率和非线性可有效地提高材料的非线性 。展开更多
The surface morphologies of polyimide LB film and the SiC film pyrolyzed from polyimide LB film were studied with STM technique. The results show that molecular chains of polyimide LB film are highly oriented in certa...The surface morphologies of polyimide LB film and the SiC film pyrolyzed from polyimide LB film were studied with STM technique. The results show that molecular chains of polyimide LB film are highly oriented in certain scale, the SiC film keeps the similar regular structure to that of polyimide LB film, suggesting that the SiC formation reaction proceeds on the basis of the lattice of polyimide molecules.展开更多
文摘本文研究了 β- Si C微粉及 β- Si C-环氧脂漆复合防晕涂层的非线性导电性。表明小粒径 β- Si C非线性好 ,粒径越小电阻越低非线性系数越大 ,粒径在 14～ 2 1μm之间时非线性最好。与粒径相近的α- Si C相比 ,β- Si C的非线性系数大、电阻率低。β- Si C防晕涂层的非线性系数随粒径增大或合成温度提高而变大 ;同粒度条件下 ,则随 β- Si C含量提高而增大 ,防晕电压升高。β- Si C调节α- Si C防晕涂层的电阻率和非线性可有效地提高材料的非线性 。
文摘The surface morphologies of polyimide LB film and the SiC film pyrolyzed from polyimide LB film were studied with STM technique. The results show that molecular chains of polyimide LB film are highly oriented in certain scale, the SiC film keeps the similar regular structure to that of polyimide LB film, suggesting that the SiC formation reaction proceeds on the basis of the lattice of polyimide molecules.
