A research was carried out to determine the period of time during which it is possible to reduce the radiation damage in mice by means of laser radiation （650 nm） after gamma irradiation. First, the mice were expose...A research was carried out to determine the period of time during which it is possible to reduce the radiation damage in mice by means of laser radiation （650 nm） after gamma irradiation. First, the mice were exposed to γ- radiation （whole body irradiation）, then after 2 h or 24 h they were irradiated with laser radiation. The results of these studies have shown that the use of laser irradiation to reduce radiation damage in mice is effective 24 h after the exposure to 5 Gy ionizing radiation which leads to the bone-marrow clinical form of the ARS （Acute radiation sickness）. In case of the lethal dose of ionizing radiation 7 Gy （the transitional clinical form of the ARS）, the increase in life expectancy of mice is observed using laser radiation both 2 and 24 h after the exposure to γ- radiation, but the effectiveness of the laser used 2 h after the ionizing radiation is significantly more efficient.展开更多
This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-sem...This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.展开更多
文摘A research was carried out to determine the period of time during which it is possible to reduce the radiation damage in mice by means of laser radiation （650 nm） after gamma irradiation. First, the mice were exposed to γ- radiation （whole body irradiation）, then after 2 h or 24 h they were irradiated with laser radiation. The results of these studies have shown that the use of laser irradiation to reduce radiation damage in mice is effective 24 h after the exposure to 5 Gy ionizing radiation which leads to the bone-marrow clinical form of the ARS （Acute radiation sickness）. In case of the lethal dose of ionizing radiation 7 Gy （the transitional clinical form of the ARS）, the increase in life expectancy of mice is observed using laser radiation both 2 and 24 h after the exposure to γ- radiation, but the effectiveness of the laser used 2 h after the ionizing radiation is significantly more efficient.
文摘This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.
