稀土永磁体的γ辐照效应研究

对烧结与粘结NdFeB、烧结SmCo5及其经化学镀Ni-P处理后的稀土烧结永磁体进行了γ辐照效应和磁性能测试研究。累积照射剂量大约为 2 .5× 10 5Gy时 ,这些永磁体的表面磁场仍无明显变化 ,即无不良影响。说明不论是烧结还是粘结稀土永磁体均具有一定的抗γ辐照能力。对这种效应的机理进行了探讨。

双极型晶体管线路瞬态γ辐照效应的模拟计算和实验验证

在ＰＣ上开发了双极型晶体管电路瞬态γ辐照效应的模拟计算程序Ｍ－ＴＲＡＣＩＩ，建立了相应器件模型参数的测试方法，并进行双极型晶体管线路瞬态γ辐照效应实验验证工作；计算结果与实测结果符合得较好，说明该模拟技术和实验方法是可行的和可靠的。

抗冲聚苯乙烯力学性能的γ辐照效应

分析研究了γ辐照引起抗冲聚苯乙烯（ＨＩＰＳ）微现结构改变与宏现力学性能之间的联系，并详细讨论了ＨＩＰＳ力学性能辐照效应的机理。

Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.