用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全...用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全收集条件Lpmin=μpτpεmin,计算出a-Si:H薄膜太阳电池的最佳i层厚度Xb.展开更多
This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si...This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.展开更多
文摘用自洽法计算了p i n型a-Si:H薄膜太阳电池中p i和i n两个分立势垒区中的电荷密度分布ρ(x)、电场分布ε(x)和耗尽层厚度XD.减少i层厚度使两个分立势垒区部分重叠,用电场叠加原理计算耗尽层中的电场分布,在此基础上,根据光生载流子的全收集条件Lpmin=μpτpεmin,计算出a-Si:H薄膜太阳电池的最佳i层厚度Xb.
基金Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and2006CB202603)the National Natural Science Foundation of China (Grant No 60506003)
文摘This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
