This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si...This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.展开更多
In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with lo...In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p–n structure(HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT(heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD(heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells.The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 m A/cm^2, respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to(1) decrease of optical absorption loss of a-Si:H and(2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide(TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.展开更多
A novel structure of Ag gridlSiNx/n＋-c-Si/n-c-Si/i-a-Si：H/p＋-a-Si：HlTCO/Ag grid was designed to increase the ef- ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material co...A novel structure of Ag gridlSiNx/n＋-c-Si/n-c-Si/i-a-Si：H/p＋-a-Si：HlTCO/Ag grid was designed to increase the ef- ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifa- cial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current （Jsc）, while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the Jsc of 41.7 mA/cm^2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm^2. We conclude that the configuration of the Ag grid/SiNx/n＋-c-Si/n-c-Si/i-a-Si：H/p＋-a-Si：H/TCO/Ag grid is a promising structure for high efficiency and low cost.展开更多
基金Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and2006CB202603)the National Natural Science Foundation of China (Grant No 60506003)
文摘This paper reports that a double N layer （a-Si：H/μc-Si：H） is used to substitute the single microcrystalline silicon n layer （n-μc-Si：H） in n/p tunnel recombination junction between subcells in a-Si：H/μc-Si：H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si：H/μc-Si：H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.
基金Project supported by the National Key R&D Program of China(Grant No.2018YFB1500403)the National Natural Science Foundation of China(Grant Nos.11964018,61741404,and 61464007)the Natural Science Foundation of Jiangxi Province of China(Grant No.20181BAB202027)
文摘In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with localized p–n structure(HACL) is designed. A numerical simulation is performed with the ATLAS program. The effect of the a-Si:H layer on the performance of the HIT(heterojunction with intrinsic thin film) solar cell is investigated. The performance improvement mechanism for the HACL cell is explored. The potential performance of the HACL solar cell is compared with those of the HIT and HACD(heterojunction of amorphous silicon and crystalline silicon with diffused junction) solar cells.The simulated results indicate that the a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 m A/cm^2, respectively, and are higher than those of the HIT and HACD solar cells. The great improvement are attributed to(1) decrease of optical absorption loss of a-Si:H and(2) decrease of photocarrier recombination for the HACL cell. The double-side local junction is very suitable for the bifacial solar cells. For an HACL cell with n-type or p-type c-Si base, all n-type or p-type c-Si passivating layers are feasible for convenience of the double-side diffusion process. Moreover, the HACL structure can reduce the consumption of rare materials since the transparent conductive oxide(TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.
基金Project supported by the Jiangxi Provincial Key Research and Development Foundation,China(Grant No.2016BBH80043)the Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion,China(Grant No.NJ20160032)the National Natural Science Foundation of China(Grant Nos.61741404,61464007,and 51561022)
文摘A novel structure of Ag gridlSiNx/n＋-c-Si/n-c-Si/i-a-Si：H/p＋-a-Si：HlTCO/Ag grid was designed to increase the ef- ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifa- cial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current （Jsc）, while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the Jsc of 41.7 mA/cm^2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm^2. We conclude that the configuration of the Ag grid/SiNx/n＋-c-Si/n-c-Si/i-a-Si：H/p＋-a-Si：H/TCO/Ag grid is a promising structure for high efficiency and low cost.
