A Laser-Diode-Pumped Nd:YAG Laser Q-Switched with a YAG Color Center Chip

A laser-diode-pumped Nd: YAG laser Q-switched Passively with a YAG colorcenter chip has been deveolped. The Q-switched pulse output has a duration of 25-70ns,an energy of about 7.9 μJ and a repetition frequency of 1.25-5.0kHz when the laser cavityparameters and pump power are changed. The Q-switched dynamics is analyzed with therate equation theorry. The theoretical and experimental results agree well.

Measurement of 3db Bandwidth of Laser Diode Chips

An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated.The effects of test jig parasites can be completely removed in the measurement by a new calibration method.In theory,the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector.Diodes' bandwidth of 7 5GHz and 10GHz is measured.The results reveal that the method is feasible and comparing with other method,it is more precise and easier to use.

An Innovative Gas Sensor with On-Chip Reference Using Monolithic Twin Laser

An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.

Semiconductor Optical Amplifier and Gain Chip Used in Wavelength Tunable Lasers

The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.

MODELING OF LASER MACHINING ON POLYMETHYL METHACRYLATE TO FABRICATE MICROFLUIDIC CHIP

The use of a CO2 laser system for fabrication of microfluidic chip on polymethyl methacrylate （PMMA） is presented to reduce fabrication cost and time of chip. The grooving process of the laser system and a model for the depth of microchannels are investigated. The relations between the depth of laser-cut channels and the laser beam power, velocity or the number of passes of the beam along the same channel are evaluated. In the experiments, the laser beam power varies from 0 to 50 W, the laser beam scanning velocity varies from 0 to 1 000 mm/s and the passes vary in the range of 1 to 10 times. Based on the principle of conservation of energy, the influence of the laser beam velocity, the laser power and the number of groove passes are examine. Considering the grooving interval energy loss, a modified mathematical model has been obtained and experimental data show good agreement with the theoretical model. This approach provides a simple way of predicting groove depths. The system provides a cost alternative of the other methods and it is especially useful on research work of rnicrofluidic prototyping due to the short cycle time of production.

Simultaneous laser-induced fluorescence and contactless-conductivity detection for microfluidic chip

A combined detection system involving simultaneous LIF and contacfless-conductometric measurements at the same place of the microfluidic chip was described. The LIF measurement was designed according to the confocal principle and a moveable contactless-conduetivity detector was used in C^4D. Both measurements were mutually independent and advantageous in analyses of mixtures. Various experimental parameters affecting the response were examined and optimized. The performances were demonstrated by simultaneous detection of Rhodamine B. And the results showed that the combined detection system could be used sensitively and reliably.

Optical transmitter module with hybrid integration of DFB laser diode and proton-exchanged LiNbO_(3)modulator chip

In this work,a hybrid integrated optical transmitter module was designed and fabricated.A proton-exchanged Mach–Zehnder lithium niobate(LiNbO_(3))modulator chip was chosen to enhance the output extinction ratio.A fiber was used to adjust the rotation of the polarization direction caused by the optical isolator.The whole optical path structure,including the laser chip,lens,fiber,and modulator chip,was simulated to achieve high optical output efficiency.After a series of process improvements,a module with an output extinction ratio of 34 dB and a bandwidth of 20.5 GHz(from 2 GHz)was obtained.The optical output efficiency of the whole module reached approximately 21%.The link performance of the module was also measured.

Diode-End-Pumped Tm:Ho:GdVO_(4) Microchip Laser at Room Temperature

Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2μm is demonstrated for the first time to our knowledge.At a heat sink temperature of 283K,maximum output power of 29.7m W is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912mW,corresponding to a slope efficiency of 5.0%.At the temperature to 283K,a single-longitudinal-mode laser as much as 8mW at 2048.5 nm is achieved.The M^(2)factor is measured to be 1.4.

A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.

Highly Er^(3+)/Yb^(3+) Co-Doped Fluoroaluminate Glasses for Microchip Laser at 1.54 μm

A series of highly Er^(3+)/Yb^(3+) co-doped fluoroaluminate glasses were investigated in order to develop a microchip laser at 1.54 μm under 980 nm excitation. Measurements of absorption, emission and up-conversion spectra were performed to examine the effect of concentration quenching on spectroscopic properties. In the glasses with Er^(3+) concentrations below 10% (mol fraction), concentration quenching is low and the Er^(3+)/Yb^(3+) co-doped fluoroaluminate glasses gave stronger fluorescence of 1.54 μm from the (()~4I_(13/2))→(()~4I_(15/2)) transition than those of Er^(3+) singly-doped glasses. In the glass with Er^(3+) concentrations above 10%, concentration quenching of 1.54 μm obviously occurs more than that of the Er^(3+) singly-doped samples because of the back energy-transfer from Er^(3+) to Yb^(3+). To obtain the highest emission efficiency at 1.54 μm, the optimum doping-concentration ratio of Er^(3+)/Yb^(3+) is found to be approximately 1∶1 in mol fraction when the Er^(3+) concentration is less than 10%.

Research of Confocal Laser Induced Fluorescence Detection System for Micro-fluidic Chip

The characteristics such as signal noise ratio（SNR） and sensitivity of the fluorescence detection system for micro-fluidic chip influence the performance of the whole system extremely. The confocal laser induced fluorescence detection system is presented. Based on the debugging of optical and circuit modules, the results of detecting the samples are given and analyzed theoretically, and the improved project is put forward.

Thulium laser treatment for bladder cancer

Recent innovations in thulium laser techniques have allowed application in the treatment of bladder cancer.Laser en bloc resection of bladder cancer is a transurethral procedure that may offer an alternative to the conventional transurethral resection procedure.We conducted a review of basic thulium laser physics and laser en bloc resection procedures and summarized the current clinical literature with a focus on complications and outcomes.Literature evidence suggests that thulium laser techniques including smooth incision,tissue vaporization,and en bloc resection represent feasible,safe,and effective procedures in the treatment of bladder cancer.Moreover,these techniques allow improved specimen orientation and accurate determination of invasion depth,facilitating correct diagnosis,restaging,and reevaluation of the need for a second resection.Nonetheless,large-scale multicentre studies with longer follow-up are warranted for a robust assessment.The present review is meant as a quick reference for urologists.

In vitro comparison of the vaporesection of human benign prostatic hyperplasia using 70-and 120-W 2μm lasers

The purpose of the current ex vivo study was to compare the speed of vaporesection of human prostatic tissue with benign prostatic hyperplasia （BPH） and the depth of tissue damage using 70- and 120-W 2-tim laser devices. Fresh prostatic tissue specimens were obtained from five patients by open prostatectomy, and were divided into separate groups （70 and 120 W） based on the energy of the laser output （70 and 120 W, respectively）. The vaporesection speed, coagulation zone depth and the necrotic tissue layer in the prostatic tissue were evaluated. The current result showed that the speeds （mean±s.d.） of vaporesection were 5.21±0.66 and 10.39±1.15 g/5 min for the 70 and 120 W groups, respectively （P=0.000）. There was no difference in the depth of necrosis/ coagulation （0.98±0.1310.30±0.09 and 0.99±0.12/0.31±0.08 mm） for the 70 and 120 W groups, respectively. In conclusion, both 70- and 120-W 2μm laser devices had superficial tissue damage during the vaporesection of human prostate tissue; moreover, the 120-W laser offers a higher vaporesection speed than the 70-W laser.

Observation and optimization of 2 μm mode‐locked pulses in all‐fiber net anomalous dispersion laser cavity

We integrally demonstrate 2μm mode-locked pulses performances in all-fiber net anomalous dispersion cavity.Stable mode-locking operations with the center wavelength around 1950–1980 nm can be achieved by using the nonlinear polarization rotation structure and properly designing the dispersion management component.Conventional soliton is firstly obtained with a total anomalous dispersion cavity.Due to the contribution of commercial ultra-high numerical aperture fibers,net dispersion is reduced to-0.077 ps2.So that stretched pulse with 19.4 nm optical bandwidth is obtained and the de-chirped pulse-width can reach 312 fs using extra-cavity compression.Under pump power greater than 890 mW,stretched pulse can evolve into noise-like pulse with 41.3 nm bandwidth.The envelope and peak of such broadband pulse can be compressed with up to 2.2 ps and 145 fs,respectively.The single pulse energy of largely chirped stretched and noise-like pulse can reach 1.785 nJ and 1.53 nJ,respectively.Furthermore,extra-cavity compression can also contribute to a significant increase of peak power.

Low noise,continuous-wave single-frequency 1.5-μm laser generated by a singly resonant optical parametric oscillator

We report a low noise continuous-wave （CW） single-frequency 1.5-μm laser source obtained by a singly resonant optical parametric oscillator （SRO） based on periodically poled lithium niobate （PPLN）. The SRO was pumped by a CW single-frequency Nd：YVO4 laser at 1.06μm. The 1.02 W of CW single-frequency signal laser at 1.5 μm was obtained at pump power of 6 W. At the output power of around 0.75 W, the power stability was better than ±l.5% and no mode-hopping was observed in 30 min and frequency stability was better than 8.5 MHz in 1 min. The signal wavelength could be tuned from 1.57 to 1.59 μm by varying the PPLN temperature. The 1.5-μm laser exhibits low noise characteristics, the intensity noise of the laser reaches the shot noise limit （SNL） at an analysis frequency of 4 MHz and the phase noise is less than 1 dB above the SNL at analysis frequencies above 10 MHz.

MXene Ti_3C_2T_x saturable absorber for pulsed laser at 1.3 μm

The excellent optical properties of MXene provide new opportunities for short-pulse lasers. A diode-pumped passively Q-switched laser at 1.3 μm wavelength with MXene Ti3C2Tx as saturable absorber was achieved for the first time. The stable passively Q-switched laser has 454 ns pulse width and 162 kHz repetition rate at 4.5 W incident pumped power. The experimental results show that the MXene Ti3C2Tx saturable absorber can be used as an optical modulator to generate short pulse lasers in a solid-state laser field.

High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence

We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350？mW in continuous-wave mode at an emission wavelength around 2.0？μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.

Spectral and laser properties of Yb and Ho co-doped(YLa)_2O_3 transparent ceramic

Highly transparent Yb,Ho doped（YLa）2O3 ceramic was fabricated by conventional ceramic processing with nanopowders.The absorption and emission spectra of the ceramic was investigated.The energy transfer mechanism between Yb3＋ and Ho3＋ was also discussed.The strong emission band around 2 μm indicated that the Yb-Ho：（Y 0.90 La 0.10）2O3 transparent ceramic is a promising gain medium for the generation of 2 μm laser emissions.The laser operation of Yb-Ho co-doped（YLa）2O3 ceramic at 2.1 μm is first reported.

Pattern recognition in multi-synaptic photonic spiking neural networks based on a DFB-SA chip

Spiking neural networks(SNNs)utilize brain-like spatiotemporal spike encoding for simulating brain functions.Photonic SNN offers an ultrahigh speed and power efficiency platform for implementing high-performance neuromorphic computing.Here,we proposed a multi-synaptic photonic SNN,combining the modified remote supervised learning with delayweight co-training to achieve pattern classification.The impact of multi-synaptic connections and the robustness of the network were investigated through numerical simulations.In addition,the collaborative computing of algorithm and hardware was demonstrated based on a fabricated integrated distributed feedback laser with a saturable absorber(DFB-SA),where 10 different noisy digital patterns were successfully classified.A functional photonic SNN that far exceeds the scale limit of hardware integration was achieved based on time-division multiplexing,demonstrating the capability of hardware-algorithm co-computation.

MICROSTRUCTURE IN LASER FUSED HIGH SPEED STEEL W6Mo5Cr4V2(M2)

Microstructure of the deepest zone of high speed steel W6Mo5Cr4V2(M2)melt after laser fu-sion was found to be so fine as the ehill zone of a solidified ingot.When narrower chill zoneformed,the long columnar dendrites grow into the melt and then the fine equiaxed cellularstructure appears in upper melt region nearly surface.The substructure of cellular grains anddendrites was observed to consist of martensite and retained austenile,while the carbides asM_6C_■ Cr_7C_3 and MC distributed at their boundaries.It is believed that the highermicrohardness up to HV_(0.1)=865-960 of the laser fused structure of the alloy is due to the oc-currence of martensite.