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现代性困境视域下研究生党建工作的“三维”突破 被引量:1
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作者 芋来生 《广西教育学院学报》 2018年第1期107-112,共6页
现代性的畸形发展把人带进一个"物化"的世界,由人的现代性困境引发的研究生党建工作的"虚-实"矛盾、"前-后"矛盾以及"彼-此"矛盾表现较为突出。为克服现代性困境中研究生党建工作的矛盾,本文... 现代性的畸形发展把人带进一个"物化"的世界,由人的现代性困境引发的研究生党建工作的"虚-实"矛盾、"前-后"矛盾以及"彼-此"矛盾表现较为突出。为克服现代性困境中研究生党建工作的矛盾,本文建议从"价值性"的价值维度、"过程性"的时间维度和"多维性"的空间维度寻求研究生党建工作的突破点。 展开更多
关键词 现代性困境 研究生党建 “三维”维度
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Simulation analysis on three-dimensional slope failure under different conditions 被引量:9
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作者 张科 曹平 +2 位作者 刘紫曜 胡惠华 龚道平 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第11期2490-2502,共13页
The failure mechanism of two-dimensional(2D) and three-dimensional(3D) slopes were investigated by using the strength reduction method.An extensive study of 3D effect was conducted with respect to boundary conditi... The failure mechanism of two-dimensional(2D) and three-dimensional(3D) slopes were investigated by using the strength reduction method.An extensive study of 3D effect was conducted with respect to boundary conditions,shear strength and concentrated surcharge load.The results obtained by 2D and 3D analyses were compared and the applicable scope of 2D and 3D method was analyzed.The results of the numerical simulation show that 3D effect is sensitive to the width of slip surface.As for slopes with specific geometry,3D effect is influenced by dimensionless parameter c/(γHtanφ).For those infinite slopes with local loading,external load has the major impact on failure mode.For those slopes with local loading and geometric constraints,the failure mode is influenced by both factors.With the increase of loading length,boundary condition exerts a more significant impact on the failure mode,and then 2D and 3D stability charts are developed,which provides a rapid and reliable way to calculate 2D and 3D factor of safety without iteration.Finally,a simple and practical calculation procedure based on the study of 3D effect and stability charts is proposed to recognize the right time to apply 2D or 3D method. 展开更多
关键词 three-dimensional slope slope stability three-dimensional effect strength reduction method failure mechanism
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Multiple Dimensions Convey Design and Application in CIS based on CG Technique
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作者 Weijun Yu 《International Journal of Technology Management》 2015年第1期97-99,共3页
In the art design field, CG technique has been applied in many aspects like third dimension graphical display, human-computer interaction, virtual reality, three-dimensional cartoon and so on. In the meanwhile, the ap... In the art design field, CG technique has been applied in many aspects like third dimension graphical display, human-computer interaction, virtual reality, three-dimensional cartoon and so on. In the meanwhile, the applications reflected in art design was appeared in computer assisted convey design, bothway or multi-ways interactive convey design and multimedia convey design. Computer assisted convey design included the application of the most CG technique in visual. Interactive convey design reflected interaction, which was the most obvious character of CG. However, multimedia convey design was used not only in CG technique, but also in digital media techniaue. 展开更多
关键词 CG technique Human-computer interaction Multiple dimensions Convey design CIS
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A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 被引量:1
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作者 Zhiyuan LUN Gang DU +2 位作者 Kai ZHAO Xiaoyan LIU Yi WANG 《Science China Earth Sciences》 SCIE EI CAS CSCD 2016年第12期188-197,共10页
This work presents a self-consistent two-dimensional(2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the... This work presents a self-consistent two-dimensional(2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data,which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory. 展开更多
关键词 charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation
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