A new dimmer for alternating-current directly driven light-emitting-diode lamp

A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pulse width control (PWM) method. Compared with the conventional phase-controlled dimmer, the proposed PWM dimmer can produce sine wave and did not cause harmonics problem. Furthermore, the proposed control method did not amplify the light flicker due to the independence of input voltage. Therefore, the PWM dimmer can be used as the dimmer of the AC LED lamp instead of the conventional phase-controlled dimmer. The experimental result shows that the proposed PWM dimmer has good performances.

Si/SiGe PMOSFET USING P^+ IMPLANTATION TECHNOLOGY

Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.

Frequency-dependent magnetoelectricity of CoFe_2O_4-BaTiO_3 particulate composites

CoFe2O4-BaTiO3 particulate composites were prepared by wet ball milling method,their magnetoelectric（ME） effect was studied as a function of their constituents and modulation frequency.The results show that the ME coefficient increases as a function of modulation frequency from 400 to 1000 Hz and the ME characteristics of ME curves are also modified because the electrical conductivity of the CoFe2O4 phase is sensitive to the increase in frequency between 400 and 1 000 Hz.The third phase Ba2Fe2O5 formed during the sintering tends to reduce the ME effect.

Suspension mechanism and application of sand-suspended slurry for coalmine fire prevention

North and west China has abundant coal resources, however, such resources make these regions prone to serious mine fire disasters. Although the copious sand and fly ash resources found in these areas can be used as fire-fighting materials, conventional grouting is expensive because of water shortage and loess particles. A new compound material(i.e., a sand-suspended colloid), which comprises a mineral inorganic gel and an organic polymer, is developed in the current study to improve the quality of sand injection and reduce water wastage when grouting. The new material can steadily suspend the sand, through the addition of a small amount of colloid yielding steady sand-suspended slurry. The process of producing the slurry is convenient and quick, overcoming the shortage of sand-suspending thickeners which need heat and are difficult to produce. The space work model based on the theory of the double-electric layer is established to study the suspended mechanism of the solid particles in the sand-suspended colloid.The dispersion effect of the sand-suspended colloid is demonstrated by the incorporation of the electrostatic effect by the double-electric layer and the steric hindrance effect on the sand particles, ensuring the stability of the colloid system and the steady suspension of sand particles in the sand-suspended colloid.Mechanical analysis indicates that the sand is suspended steadily under the condition that the rock sand particles stress on the lower part of the fluid is less than the yield stress of the colloid. Finally, the fireprevention technology of sand suspension was applied and tested in the Daliuta Coal Mine, achieving successful results.

rmhTNF-α Combined with Cisplatin Inhibits Proliferation of A549 Cell Line In Vitro

Objective To explore the inhibitory effect of recombinant mutant human tumor necrosis factor-α(rmhTNF-α) in combination with cisplatin on human lung adenocarcinoma cell line A549. Methods Human lung adenocarcinoma cell line A549 was treated with varying concentrations of rmhTNF-α(0.38, 0.75, 1.50, 6.00 and 12.00 IU/ml) or cisplatin(3.91, 7.81, 15.63, 31.25 and 62.50 μg/ml) for 24 hours. Viable cell number was analyzed by using crystal violet staining. The inhibitory rates of A549 cells growth by the two drugs were calculated. For analyzing whether there was a synergistic effect of rmhTNF-α with cisplatin, A549 cells were treated with 0.75 IU/ml rmhTNF-α and increased concentrations of cisplatin. Results rmhTNF-α or cisplatin inhibited the growth of A549 cell lines in a dose-dependent manner. The inhibitory effect of rmhTNF-α combined with cisplatin was significantly greater than cisplatin alone at the same concentration(all P<0.01). Conclusion rmhTNF-α combined with cisplatin might have synergistic inhibitory effect on human lung adenocarcinoma cell line A549.

Co-benefits of Local Air Pollutants and Greenhouse Gas Reduction Achieved by Hydropower Development in Xizang(Tibet) Autonomous Region, China

Hydropower development in Xizang(Tibet) Autonomous Region plays a vital role in co-control of local air pollutants and greenhouse gas(GHG) in China. According to emission factors of local air pollutants and GHG of coal-fired power industry in different hydropower service regions, we estimate the effect and synergy of local air pollutants and GHG reduction achieved by hydropower development in Tibet, examine the main factors constraining the effect and synergy, using correlation analysis and multiple regression analysis. The results show that: 1) During the period from 2006 to 2012, the effect of local air pollutants and GHG reduction achieved by hydropower development in Tibet decreased as a whole, while the synergy increased first and decreased afterwards. 2) The effect and synergy of local air pollutants and GHG reduction achieved by hydropower development in Tibet vary significantly across different hydropower service regions. The effect based on emission levels of Central China power grid(CCPG) and Northwest China power grid(NCPG) was more significant than that based on emission level of national power grid(NPG) from 2006 to 2012, and the synergy based on emission levels of CCPG and NCPG was also more significant than that based on emission level of NPG from 2010 to 2012. 3) The main factors constraining the effect and synergy based on emission levels of NCPG and CCPG included SO2 removal rate and NOx removal rate, the effect and synergy based on emission level of NPG was mainly influenced by net coal consumption rate. 4) Transferring hydropower from Tibet to NCPG and CCPG, and substituting local coal-fired power with hydropower can greatly help to co-control local air pollutants and GHG, transform the emission reduction pattern of the power industry and optimize energy structure.

DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes:A Research Based on Channel Length Modulation Effect

Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.

Preparation and electronic characteristics of anionic perylene bisimide films

Neutral perylene bisimides(PBI) are well-known n-type organic semiconductors, with number of challenging electronic properties in their neutral and reduced states. We report the characteristic electronic properties of PBI anionic films. We unexpectedly discovered that pristine PBI dianion film showed p-type character, while oxidized dianion film(dominant neutral state with few radical anions) showed normal n-type semiconductor character based on Seebeck effect measurements. Both kinds of films exhibit high electrical conductivity with a potential for thermoelectric applications. The mechanism of polarity reversal is proposed.

Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

High quality chromium （Cr） doped three-dimensional topological insulator （TI） Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 （111） substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2 xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors （DMSs）, here the coercivity field is not significantly changed with decreasing cartier density. Carrier-independent ferromag- netism heralds Sbz_xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall （QAH） effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

Enhancing the catalytic efficiency of the Heck coupling reaction by forming 5 nm Pd octahedrons using kinetic control

Heterogeneous catalysis occurs through a process of interfacial reactions; therefore, both surface facet and size control can increase catalytic efficiency. Octahedral Pd nanocrystals, enclosed by {111} facets, should be the ideal geometrical shape for Heck coupling reactions; however, it is challenging to synthesize 5 nm Pd octahedrons with a relatively uniform size distribution using existing capping-agent techniques. Here, we used palladium as a model system to investigate how the kinetics of atomic addition could be precisely controlled using a syringe pump. As a result, our method produced Pd octahedrons as small as 5 nm, which increased the catalytic efficiency of Heck coupling reactions while reducing the weight of catalyst used.

Large-scale fabrication of field-effect transistors based on solution-grown organic single crystals

A simple solution processing method was de- veloped to grow large-scale well-aligned single crystals in- cluding 6,13-bis（triisopropylsilylethynyl）pentacene （TIPS- pentacene）, anthracene, tetracene, perylene, C6o and tetra- cyanoquinodimethane. As pinned by a solid needle, a droplet of semiconductor solution dried into single-crystal arrays on a 1 cm×2 cm substrate. TIPS-pentacene was used to demonstrate the fabrication of hundreds of field- effect transistors （FETs） with the hole mobility as high as 6.46 cm^2 V^-1.s^-1. As such, this work provides a high- throughput, yet efficient approach for statistical examination on the FET performance of organic single crystals.

Transient response of carbon nanotube integrated circuits

The speed of frequency response of all published carbon nanotube （CNT） integrated circuits （ICs） is far from that predicted. The transient response of CNT ICs is explored systematically through the combination of experimental and simulation methods. Complementary field-effect-transistor （FET） based inverters were fabricated on a single semiconducting CNT, and the dynamic response measurement indicates that it can only work at an unexpectedly low speed, i.e. with a large propagation delay of 30 }_ts. Owing to the larger output resistance of CNT FETs, the existence of parasitic capacitances should induce much larger resistive-capacitive （RC） delay than that in Si ICs. Through detailed analysis combining simulation and experimental measurements, several kinds of parasitic capacitances dragging down the actual speed of CNT FET ICs are identified one by one, and each of them limits the speed at different levels through RC delay. It is found that the parasitic capacitance from the measurement system is the dominant one, and the large RC delay lowers the speed of CNT FETs logic circuits to only several kHz which is similar to the experimental results. Various optimized schemes are suggested and demonstrated to minimize the effect of parasitic capacitances, and thus improve the speed of CNT ICs.

Facile Fabrication of AII-SWNT Field-Effect Transistors

Field-effect transistors （FETs） have been fabricated using as-grown single-walled carbon nanotubes （SWNTs） for the channel as well as both source and drain electrodes. The underlying Si substrate was employed as the back-gate electrode. Fabrication consisted of patterned catalyst deposition by surface modification followed by dip-coating and synthesis of SWNTs by alcohol chemical vapor deposition （CVD）. The electrodes and channel were grown simultaneously in one CVD process. The resulting FETs exhibited excellent performance, with an I ON/I OFF ratio of 10^6 and a maximum ON-state current （/ON） exceeding 13 uA. The large I ON is attributed to SWNT bundles connecting the SWNT channel with the SWNT electrodes. Bundling creates a large contact area, which results in a small contact resistance despite the presence of Schottky barriers at metallic-semiconducting interfaces. The approach described here demonstrates a significant step toward the realization of metal-free electronics.

The highly conducting carbon electrodes derived from spin-coated polyacrylonitrile films

Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at the PAN film thickness of 70 nm） and partial transmittance. These pyrolyzed PAN （PPAN） films were patterned as bottom electrodes by photolithography, and utilized as drain and source electrodes to fabricate organic field-effect transistor （OFET） devices with a p-type semiconductor （P3HT） and an n-type semiconductor （DPP-containing quinoidal small molecule） through a spin-coating procedure. The results showed that the devices with the PAN electrodes exhibited almost the same excellent performance without any further modification compared to those devices with traditional Au electrodes. Since these PPAN films had the advantages of low-cost, high performance, easier for large-area fabrication, thermal and chemical stability, it should be a promising electrode material for organic electrodes.

Dynamic and steady control of quantum coherence in photonic crystals via the Zeeman effect

The dynamic evolution of a multi-level atom in the three-dimensional photonic crystal under an applied magnetic field is investigated.By combining the Zeeman effect with the photonic band gap effect,the dynamic quantum superposition states and steady quantum coherent trapping states of the atom can be flexibly controlled.This paves the way for coherent manipulation of quantum states in the solid-state system,which has important applications in quantum information processing.

Site-controlled formation of InGaAs quantum nanostructures——Tailoring the dimensionality and the quantum confinement

We report on InGaAs quantum disks （QDks） controllably formed on the top （001） facet of nano-patterned GaAs pyramidal platforms. The QDks exhibit pyramidal shape with special facets and varied dimensions, depending on the GaAs pyramidal buffer and the amount of InGaAs deposited. The formation of QDks is explained by the overgrowth of an InGaAs layer and thereafter coalescence of small InGaAs islands. Photoluminescence （PL） characteristics of ensemble QDks and exciton features of individual QDks together demonstrate that we may achieve a transition from zero-dimensional （0D） to two-dimensional （2D） quantum structure with increasing QDk size. This transition provides the flexibility to continuously tailor the dimensionality and subsequently the quantum confinement of semiconductor nanostructures via site-controlled self-assembled epitaxy for device applications based on single quantum structures.

A New Cooperation Mechanism of Kinesin Motors when Extracting Membrane Tube

Membrane tubes are important functional elements for riving cells. Experiments have found that membrane tubes can be extracted from giant lipid vesicles by groups of kinesin. How these motors cooperate in extracting the membrane tube is a very important issue but still unclear so far. In this paper, we propose a cooperation mechanism called two-track-dumbbell model, in which kinesin is regarded as a dumbbell with an end （tail domain） tethered on the fluid-like membrane and the other end （head domain） stepping on the microtubule. Taking account of the elasticity of kinesin molecule and the excluded volume effect of both the head domain and the tail domain of kinesin, which are not considered in previous models, we simulate the growth process of the membrane tube pulled by kinesin motors. Our results indicate that in the case of strong or moderate exclusion of motor tails, the average number of motors pulling the tube can be as high as 9 and thus motors moving along a single microtubule protofilament can generate enough force to extract membrane tubes from vesicles. This result is different from previous studies and may be tested by future experiments.